InGaP Amplifier

Preliminary Product Description Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. V c c = 5V SPB-2026Z 1.7-2.2GHz 2W InGaP Amplifier Pb RoHS Compliant & Green Package SOF-26 Package Product Features • • • • • • P1dB = 33.8dBm @ 5V, 1960 MHz ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz On-chip Input Power Detector Low Thermal Resistance Package Power up/down control < 1μs Robust Class 1C ESD Functional Block Diagram SZ P-2026 SPB-2026 RFOUT RFIN A c tiv e Bias Applications V bias = 5V Pow er Up/Dow n Control Pow er Detec tor • • • • Parameters Units Macro/Micro-Cell driver stage Pico-Cell output stage GSM, CDMA, TDSCDMA, WCDMA Single and Multi-Carrier applications Frequency Min. Typ. Max. Symbol www.DataSheet4U.com 1842 MHz S21 Small Signal Gain dB 1960 MHz 2140 MHz 1842 MHz P1dB Output Power at 1 dB Compression dBm 1960 MHz 2140 MHz IM3 Third Order Suppression _22 dBm per tone, 1MHz spacing 13.6 12.2 12.1 13.7 13.6 33.9 33.8 31.3 -42 32.8 -49 -45 -48 23 25 23 25 22 25 16 8 21 12 5.2 0.85 to 1.4 395 445 2.1 10 12 485 6.2 15.2 15.1 1842 MHz dBc -55dBc ACP -45dBc ACP 1960 MHz 2140 MHz dBm dBm dBm dB dB dB V mA mA 1842MHz 1960MHz 2140MHz 1960 MHz 1960 MHz 1960 MHz Channel Power WCDMA Channel Power tested with 64 Channels FWD -55dBc ACP -45dBc ACP -55dBc ACP -45dBc ACP S11 S22 NF Vdet Range ICQ IVPC Ileak RTH, j-l Test Conditions: Input Return Loss Output Return Loss Noise Figure Voltage Range for CW Pout=13dBm to 33dBm Quiescent Current (Vcc = 5V) Power Up Control Current (Vpc = 5V) Vcc Leakage Current (Vcc = 5V, Vpc = 0V) Thermal Resistance (junction - lead) Vcc = 5V ICQ = 445mA Typ. μA °C/W TL = 25°C ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105436 Rev D Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Absolute Maximum Ratings Parameter Max Device Current (ICE) *Max Device Voltage (VCC) Power Dissipation Max. RF Input Power with 50 ohm output load Max. RF Input Power with 10:1 VSWR output load Max. RF Output Power with 50 ohm output load (Continuous long term operation) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Absolute Limit 1500 mA 7V 6W 28 dBm 23 dBm 30dBm +150°C -40°C to +85°C +150°C Simplified Device Schematic GND Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. VBIAS 1 Bias 6 5 NC Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l *Note: No RF Drive TL=TLEAD RFIN 2 RFOUT/ VCC Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level www.sirenza.com VPC Rating Class 1C MSL1 3 4 VDET This product qualification report can be downloaded at GND Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Pin Out Description Pin # Function Description 1 2 3 4 5 6 GND VBIAS RFIN VPC VDET NC GND This is the supply voltage for the active bias circuit. This is the RF input pin and has a DC voltage present. An external DC block is required. Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. This is the output port for the power detector. It samples the power at the input of the amplifier. Not connected These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are required as shown in the recommended land pattern. Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105436 Rev D RFOUT/VCC This is the RF output pin and DC connection to the collector. 303 S. Technology Ct. Broomfield, CO 80021 Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Typical RF Performance (1805 - 1880MHz Application Circuit) Single Carrier ACP vs. Ch. Pwr. @1842MHz -20 -30 Dual Carrier ACP vs. Ch. Pwr. @1842MHz -20 25C ______ -40C - - - - - 85C _ _ _ IM (dBc) -30 -40 -50 -60 25C ______ -40C - - - - - 85C _ _ _ ACP (dBc) -40 -50 -60 WCDMA with 64 DPCH Source ACPR WCDMA with 64 DPCH and 5MHz spacing Source ACPR -70 14 16 18 20 22 24 26 -70 Ch. Pwr. (dBm) 14 15 16 18 20 22 24 26 Ch. Pwr. (dBm) IM3 vs. Freq. (22dBm Output Tones) -20 IM3 vs. Tone Power @1842MHz -20 25C -40C 85C -30 -30 25C -40C 85C -50 IM3 (dBc) -50 IM3 (dBc) -40 -40 -60 -60 -70 1.8 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 -70 14 16 18 20 22 24 26 28 Frequency (GHz) Pout per tone (dBm) 36 P1dB vs. Frequency 34 Pin vs. Pout @1842MHz 34 30 P1dB (dBm) 32 Pout (dBm) 26 22 18 14 10 25C -40C 85C 30 25C 28 -40C 85C 26 1.8 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 Pin (dBm) http://www.sirenza.com EDS-105436 Rev D Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Typical RF Performance (1805 - 1880MHz Application Circuit) Noise Figure vs. Frequency 7 6 5 Vdetect vs. Pout @1842MHz 1.2 1.1 1 0.9 0.8 0.7 0.6 1.88 4 3 25C 2 1 1.8 1.81 1.82 1.83 1.84 1.85 1.86 -40C 85C 1.87 Vdetect (V) NF (dB) 25C -40C 85C 13 15 17 19 21 23 25 27 29 31 33 Frequency (GHz) Pout (dBm) S-Parameters over Temperature (1805 - 1880MHz Application Circuit) |S11| over Temperature 0 -5 -10 |S21| over Temperature 20 18 S21 -40C 85C S11 (dB) S21 (dB) S11 -40C 85C 1.8 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 16 14 12 10 1.8 1.81 -15 -20 -25 -30 1.82 1.83 1.84 1.85 1.86 1.87 1.88 Frequency (GHz) Frequency (GHz) |S12| over Temperature 0 -5 S12 -40C 0 -5 -10 S22 -40C 85C |S22| over Temperature S12 (dB) -10 -15 -20 -25 -30 1.8 1.81 S22 (dB) 1.83 1.84 1.85 1.86 1.87 1.88 85C -15 -20 -25 -30 1.8 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.82 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 Frequency (GHz) http://www.sirenza.com EDS-105436 Rev D Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Typical RF Performance (1930 - 1990MHz Application Circuit) Single Carrier ACP vs. Ch. Pwr. @1960MHz -20 -30 Dual Carrier ACP vs. Ch. Pwr. @1960MHz -20 25C ______ -40C - - - - - 85C _ _ _ IM (dBc) -30 -40 -50 -60 25C ______ -40C - - - - - 85C _ _ _ ACP (dBc) -40 -50 -60 WCDMA with 64 DPCH Source ACPR WCDMA with 64 DPCH and 5MHz spacing Source ACPR -70 14 16 18 20 22 24 26 -70 14 15 16 18 20 22 24 26 Ch. Pwr. (dBm) Ch. Pwr. (dBm) IM3 vs. Freq. (22dBm Output Tones) -20 IM3 vs. Tone Power @1960MHz -20 -30 -30 IM3 (dBc) -50 25C -60 -40C 85C -70 1.93 IM3 (dBc) -40 -40 -50 25C -60 -40C 85C 1.94 1.95 1.96 1.97 1.98 1.99 -70 14 16 18 20 22 24 26 28 Frequency (GHz) Pout per tone (dBm) Pin vs. Pout @1960MHz 34 36 P1dB vs. Frequency 34 30 P1dB (dBm) 32 Pout (dBm) 26 22 25C 18 14 10 -40C 85C 30 25C 28 -40C 85C 26 1.93 1.94 1.95 1.96 1.97 1.98 1.99 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 Pin (dBm) http://www.sirenza.com EDS-105436 Rev D Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Typical RF Performance (1930 - 1990MHz Application Circuit) Noise Figure vs. Frequency 7 6 5 Vdetect vs. Pout @1960MHz 1.2 1.1 1 0.9 0.8 0.7 0.6 4 3 2 1 1.93 25C -40C 85C Vdetect (V) NF (dB) 25C -40C 85C 1.94 1.95 1.96 1.97 1.98 1.99 13 15 17 19 21 23 25 27 29 31 33 Frequency (GHz) Pout (dBm) S-Parameters over Temperature (1930 - 1990MHz Application Circuit) |S11| over Temperature 0 -5 -10 S11 -40C 85C 18 20 S21 -40C 85C |S21| over Temperature S11 (dB) S21 (dB) 1.94 1.95 1.96 1.97 1.98 1.99 16 14 12 10 1.93 -15 -20 -25 -30 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency (GHz) Frequency (GHz) |S12| over Temperature 0 -5 S12 -40C 0 S22 -5 -10 -40C 85C |S22| over Temperature S12 (dB) -10 -15 -20 -25 -30 1.93 S22 (dB) 1.95 1.96 1.97 1.98 1.99 85C -15 -20 -25 -30 1.93 1.94 1.94 1.95 1.96 1.97 1.98 1.99 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 Frequency (GHz) http://www.sirenza.com EDS-105436 Rev D Preliminary SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier Typical RF Performance (2110 - 2170MHz Application