SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43
PARTMARKING DETAILS –
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current
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BR4
IC
BSR33
C
E C B
SOT89
Continuous Collector Current
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT V V V CONDITIONS. I C=-100 µ A Collector-Base Breakdown Voltage V (BR)CBO V (BR)CEO V (BR)EBO -90 -80 -5
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current I CBO Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio Output Capacitance Input Capacitance
Transition Frequency Turn-On Time
Turn-Off Time
*Measured under pulsed conditions. Spice parameter data is available upon request for this device
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SYMBOL V CBO V CEO VALUE -90 -80 -5 -2 -1 1 UNIT V V V EBO I CM V A A P TOT W T j:T stg -65 to +150 °C I C=-10mA I E =-10 µ A -100 -50 nA µA V V V V V CB=-60V V CB=-60V, T amb=125°C V CE(sat) V BE(sat) h FE -0.25 -0.5 -1.0 -1.2 300 I C =-150mA, I B=-15mA* I C =-500mA, I B=-50mA* I C=-150mA, I B=-15mA* I C =-500mA, I B=-50mA* I C =-100 µ A, V CE =-5V* I C =-100mA, V CE =-5V* I C =-500mA, V CE =-5V* 30 100 50 C obo C ibo fT 20 pF pF V CB =-10V, f =1MHz 120 V EB =-0.5V, f =1MHz 100 MHz ns ns I C=-50mA, V CE=-10V f =35MHz T on 500 650 T off V CC =-20V, I C =-100mA I B1 =-I B2 =-5mA
TBA
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