SOP8901 (Sanyo) - Motor Bridge Circuit Applications

Part Number	SOP8901
Manufacturer	Sanyo
Semiconductor DataSheet
DataSheet View

Ordering number : ENN8199 SOP8901 SOP8901 Features • PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Symbol Conditions Mounted on a ceramic board (2000mm2!0.8mm)1unit w w w .D PD Tch Tstg IDP t a S a e h .c U t4 e m o Ratings --30 --30 --5 --3 --5 1.4 2.0 150 --55 to +150 30 ±20 3.5 14 1.4 2.0 150 --55 to +150 Unit V V V A A W W °C °C V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (2000mm2!0.8mm)1unit Tc=25°C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN w w w .D a aS t ee h 4U t om .c 63005EA MS IM TB-00001362 No.8199-1/6 SOP8901 Electrical Characteristics at Ta=25°C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=1.8A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V 1.2 3.7 5.3 64 105 180 42 25 7 3 20 6 5.0 0.9 0.6 0.88 1.2 84 150 30 1 ±10 2.5 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--30V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--500mA VCE=--10V, IC=--500mA VCB=10V, f=1MHz IC=--1.5A, IB=--30mA IC=--1.5A, IB=--30mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 --5 50 270 27 200 400 25 -180 --0.83 -270 --1.2 --100 --100 560 MHz pF mV V V V V ns ns ns nA nA Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 7005-011 8 5 0.3 Electrical Connection 8 7 6 5 1 4 0.43 1.5 1.8 MAX 0.2 5.0 1 : Source 2 : Gate 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Drain 8 : Drain SANYO : SOP8 1 : Source 2 : Gate 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Drain 8 : Drain Top view 4.4 6.0 1 2 3 4 0.595 1.27 0.1 No.8199-2/6 SOP8901 Switching Time Test Circuit VIN PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB PW=10µs D.C.≤1% 10V 0V VIN ID=1A RL=15Ω VOUT VDD=15V D RL + 470µF VCC= --12V P.G 50Ω + 100µF G SOP8901 VBE=5V S IC=20IB1= --20IB2= --500mA mA --2.0 IC -- VCE --50m --4 A 0m [TR] --3.0 IC -- VBE [TR] VCE= --2V --1.8 0 --2 --3 0 mA A Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --6mA Collector Current, IC -- A --1.6 --10mA --8mA --2.5 --2.0 --4mA --1.5 --2mA --1.0 --0.5 IB=0mA --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT04605 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT04603 Base-to-Emitter Voltage, VBE -- V 1000 hFE -- IC [TR] VCE= --2V Gain-Bandwidth Product, f T -- MHz f T -- IC Ta=7 5°C 25°C --25°C [TR] VCE= --10V 7 5 DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 3 2 100 7 5 100 7 5 --0.01 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 5 7 --10 IT04607 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Cob -- VCB Collector Current, IC -- A 7 5 5 7 --10 IT04609 [TR] f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC [TR] IC / IB=20 Output Capacitance, Cob -- pF 7 3 2 5 --100 7 5 3 2 3 2 = Ta 75 °C C --2 ° C 5° 25 10 --1.0 2 3 5 7 --10 2 3 5 IT04611 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 Collector-to-Base Voltage, VCB -- V Collector Current, IC -- A IT04613 No.8199-3/6 SOP8901 3 2 VCE(sat) -- IC IC / IB=50 [TR] 3 VBE(sat) -- IC [TR] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 --1.0 Ta= --25°C 7 Ta= 7 5°C °C 5°C 2 --25 5 25°C 75°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 Collector Current, IC -- A --10 7 5 3 IT04615 ASO Collector Current, IC -- A 1.6 1.4 IT04617 [TR] <50µs 1m PC -- Ta [TR] ICP= --5A IC= --3A DC Collector Dissipation, PC -- W s ms M 10 s s 0µ 0µ 50 ou Collector Current, IC -- A 2 --1.0 7 5 3 2 --0.1 7 5 3 2 op 10 era tio 10 0m 1.2 1.0 0.8 0.6 0.4 0.2 0 0 nt ed on s ac er n am ic bo ar d (2 00 0m m2 ! 0. 8m --0.01 --0.1 Tc=25°C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 m )1 un it 160 20 40 60 80 100 120 140 Collector-to-Emitter Voltage, VCE -- V 2.5 IT08132 Ambient Temperature, Ta -- °C IT08133 PC -- Tc [TR] Collector Dissipation, PC -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C 7 IT06743 ID -- VDS [FET] 3.0 ID -- VGS [FET] VDS=10V 6 2.5 6V 4V Drain Current, ID -- A 5 Drain Current, ID -- A 8V 2.0 5V 4 =3V VGS 1.5 3 10V 1.0 2 1 0 0 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 Ta= 75°C --25 °C 25°C 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V IT02676 Gate-to-Source Voltage, VGS -- V IT02677 No.8199-4/6 SOP8901 300 RDS(on) -- VGS [FET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 RDS(on) -- Ta [FET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 200 1.8A 150 ID=3.5A 100 1. I D= VG 8A, 4V S= 100 .5A I D=3 50 =10V , VGS 50 0 2 3 4 5 6 7 8 9 10 IT02678 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT02679 [FET] VDS=10V IS -- VSD [FET] VGS=0V Forward Transfer Admittance, yfs -- S 7 5 2 1.0 7 5 3 2 C 5° °C --2 75 = Ta °C 25 Source Current, IS -- A 3 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 5 7 10 IT02680 0 0.2 0.4 Ta=75 °C 25°C --25°C 0.6 0.8 1.0 1.2 1.4 IT02681 SW Time -- ID Diode Forward Voltage, VSD -- V 1000 7 5 [FET] Ciss, Coss, Crss -- VDS [FET] f=1MHz Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V td(off) Ciss, Coss, Crss -- pF 3 2 Ciss tf 10 7 5 3 2 td(on) 100 7 5 3 2 Coss Crss tr 1.0 0.1 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT02682 7 0 5 10 15 20 IT02683 Drain-to-Source Voltage, VDS -- V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 VGS -- Qg VDS=10V ID=3.5A [FET] ASO [FET] <10µs Gate-to-Source Voltage, VGS -- V IDP=14A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT02684 10 ID=3.5A Drain Current, ID -- A 0µ s 1m s DC op 10 n Operation in this area is limited by RDS(on). 100ms Tc=25°C Single pulse 1unit Mounted on a ceramic board (2000mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 era tio ms 0.01 0.1 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT02685 No.8199-5/6 SOP8901 1.6 PD -- Ta M [FET] Allowable Power Dissipation, PD -- W 2.5 PD -- Tc [FET] Allowable Power Dissipation, PD -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 ou nt 2.0 ed on ac er am 1.5 ic bo ar d (2 00 1.0 0m m2 ×0 .8 m m 0.5 )1 un it 160 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT08134 Case Tamperature, Tc -- °C IT02686 Note on usage : Since the SOP8901 includes MOSFET, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent stat