Ordering number : ENN8007
SOP8501
SOP8501
Features
• •
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
High breakdown voltage. (VCEO≥400V) Excellent hFE linearlity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Conditions
Mounted on a ceramic board (2000mm2!0.8mm) 1unit Mounted on a ceramic board (2000mm2!0.8mm) 1unit
Electrical Characteristics at Ta=25°C
Parameter [PNP] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Turn-ON Time Storage Time Fall Time ICBO IEBO hFE fT Symbol
Collector-to-Emitter Breakdown Voltage
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VCB=--300V, IE=0 VEB=--4V, IC=0
S a
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PNP --400 --400 --5 --2 --1 min 40
m o
NPN 400 400 5 0.2 0.4 Unit V V V A A W W °C °C
1.3 1.6
150
--55 to +150
Conditions
Ratings typ max --1.0 --1.0 200 50 --1.0 --1.0 --400 --400 --5 12 0.25 3.0 0.3
Unit
µA µA MHz V V V V V pF µs µs µs
VCE=--10V, IC=--100mA VCE=--10V, IC=--50mA
VCE(sat) VBE(sat)
IC=-200mA, IB=--20mA IC=-200mA, IB=--20mA IC=-10µA, IE=0 IC=-1mA, RBE=∞ IE=--10µA, IC=0 VCB=--30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit
V(BR)CBO V(BR)CEO V(BR)EBO Cob
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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D2004CB TS IM TB-00000396 No.8007-1/5
SOP8501
Continued from preceding page.
Parameter [NPN] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob Cre ton toff VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA VCE=30V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz VCB=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. 400 400 5 4 3 0.25 5.0 60 70 0.6 1.0 1.0 1.0 200 MHz V V V V V pF pF µs µs µA µA Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2233
8 5
Electrical Connection
8
7
6
5
5.0
0.595
1.27
0.43
0.1
1.5
1.8max
1
4
0.2
1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 SANYO : SOP8
1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1
Top view
4.4
6.0
0.3
1
2
3
4
Switching Time Test Circuit
[PNP] [NPN]
IB1 INPUT IB2 RB VR + 50Ω 100µF OUTPUT RL + 470µF INPUT
IB1 IB2 RB VR PW=20µs D.C.≤1% 50Ω + 100µF + 470µF OUTPUT RL
PW=20µs D.C.≤1%
VBE=5V VCC= --150V 10IB1= --10IB2=IC= --200mA IC=200m RL=750Ω, RB=50Ω
VBE= --1V VCC=150V 10IB1= --10IB2=IC=50mA IC=50m RL=3kΩ, RB=200Ω
No.8007-2/5
SOP8501
--1.0
IC -- VBE
[PNP] VCE= --10V
120
IC -- VBE
[NPN] VCE=10V
Collector Current, IC -- mA
--0.8
100
Collector Current, IC -- A
80
--0.6
25°C
60
--0.4
Ta=7 5°C
--25°C
40
--0.2
20
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V
3 2
ITR04587
Base-to-Emitter Voltage, VBE -- V
5 3 2
Ta=70°C 25°C --30°C
ITR04446
hFE -- IC
[PNP] VCE= --10V
hFE -- IC
Ta=70°C 25°C
--30°C
[NPN] VCE=10V
100
DC Current Gain, hFE
7 5 3 2
DC Current Gain, hFE
5 7 --100 2 3 5 7--1000 2 3 ITR04589 mA
Ta=75°C 25°C --25°C
100 7 5 3 2
10 7 5 3 3 5 7 --10 2 3
10 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector Current, IC -3 2
VCE(sat) -- IC
Collector Current, IC -- mA
5 3
ITR04448
[PNP] IC / IB=10
VCE(sat) -- IC
[NPN] IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2
--1.0 7
1.0 7 5 3 2
5 3 2
2 °C 5°C
Ta = --2 5
--0.1 7 5 3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 ITR04597
75°C
0.1 7 5 7 1.0
Ta=70°C
2 3 5 7 10
C -30° C, 25°
2 3 5 7 100 2 ITR04450
Collector Current, IC -- mA
3 2
VBE(sat) -- IC
Collector Current, IC -- mA
7 5
[PNP] IC / IB=10
VBE(sat) -- IC
[NPN] IC / IB=10
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
--1.0 7 5 3 2
Ta= --25°C
25°C
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
3 2
75°C
1.0
Ta= --30°C
7 5
25°C
--0.1 7 5 3 5 7 --10 2 3 5 7--100 2 3 5 7--1000 2 3 mA ITR04599
70°C
3 7 1.0
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC --
Collector Current, IC -- mA
ITR04452
No.8007-3/5
SOP8501
10 7
SW Time -- IC
tst g
[PNP]
Switching Time, SW Time -- µs
Switching Time, SW Time -- µs
5 3 2
VCC= --150V 10IB1= --10IB2=IC
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5
SW Time -- IC
tst g
[NPN]
1.0 7 5 3 2
tf
to n
tf
to n
0.1 7 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3
VCC= --150V 10IB1= --10IB2=IC
3 5 7 10 2 3 5 7 100 2 3 5
Collector Current, IC -- mA
3
ITR04595
f T -- IC
Collector Current, IC -- mA
3 2
ITR04454
[PNP] VCE= --10V
Output Capacitance, Cob -- pF
Cob -- VCB
[PNP] f=1MHz
Gain-Bandwidth Product, fT -- MHz
2
100 7 5 3 2
100 7 5 3 2
10 7 5 3
10 7 5 3 5 7 --10 2 3 5 7 --100 2 3 5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC -- mA
3 2
ITR04591
ASO
Collector-to-Base Voltage, VCB -- V
7 5 3
7 --100 2 ITR04593
[PNP]
m
ASO
[NPN]
--1.0
Collector Current, IC -- A
7 5 3 2
ICP= --2A IC= --1A
DC op
10
10
ICP=0.4A
µs 500
10
s
1m s
s
Collector Current, IC -- A
0m
2 0.1 7 5 3 2 0.01 7 5 3 2
IC=0.2A
DC
10
m
µs 500
s
0m s
1m s
op
er
--0.1
7 5 3 2 7 5
ati
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on
ati on
--0.01
3 2
Tc=25°C Single pulse 2 --0.001 Mounted on a ceramic board (2000mm !0.8mm) 1unit --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V IT07325 [PNP / NPN] PC -- Ta
1.6 1.4
0.001 0.1
Tc=25°C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7
1.8 1.6
Collector-to-Emitter Voltage, VCE -- V IT07326 [PNP / NPN] PT -- Ta
M ou
Collector Dissipation, PC -- W
1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0
M
nt
Total Dissipation, PT -- W
ou
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
nt
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20
00
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0m
m
m2 !0
.8m
m2 !0 .
8m
m
m
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un
un
it
160
it
160
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
IT07327
Ambient Temperature, Ta -- °C
IT07328
No.8007-4/5
SOP8501
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume product
