SIPMOS Small-Signal-Transistor

Final data SN7002N SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Drain pin 3 Gate pin1 Source pin 2 Product Summary VDS RDS(on) ID 60 5 0.2 SOT-23 V Ω A Type SN7002N SN7002N Package SOT-23 SOT-23 Ordering Code Q67042-S4185 Q67042-S4192 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel Marking sSN sSN Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.2 0.16 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg 0.8 6 ±20 Class 1 0.36 -55... +150 55/150/56 W °C kV/µs V Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/µs, T jmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-03-26 Final data SN7002N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJA 350 K/W Symbol min. Values typ. max. Unit Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C µA 3.9 2.5 0.1 5 10 7.5 5 nA Ω Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.17A Drain-source on-state resistance VGS=10V, ID=0.5A Page 2 2003-03-26 Final data SN7002N Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =48V, ID =0.5A, VGS =0 to 10V VDD =48V, ID =0.5A Symbol Conditions min. Values typ. 0.17 34 7.2 2.8 2.4 3.2 5.3 3.6 max. 45 9.6 4.2 3.6 4.8 8 5.4 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS≥2*ID*RDS(on)max, ID=0.16A VGS=0, VDS=25V, f=1MHz 0.09 - S pF VDD=30V, VGS=10V, ID=0.5A, RG=6Ω ns - 0.14 0.42 1 4.5 0.21 0.63 1.5 - nC V(plateau) VDD =48V, ID = 0.5 A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF = I S VR=30V, IF =lS , diF/dt=100A/µs IS TA=25°C - 0.83 14.2 5.9 0.2 0.8 1.2 21.3 8.8 A V ns nC Page 3 2003-03-26 Final data SN7002N 1 Power dissipation Ptot = f (TA) 0.38 SN7002N 2 Drain current ID = f (TA) parameter: VGS ≥ 10 V 0.22 SN7002N W 0.32 0.28 A 0.18 0.16 Ptot ID 20 40 60 80 100 120 0.24 0.2 0.16 0.14 0.12 0.1 0.08 0.12 0.06 0.08 0.04 0 0 0.04 0.02 °C 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 1 SN7002N 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 SN7002N K/W A 10 2 10 0 t = 200.0µs p / ID DS =V ZthJA ID 1 ms 10 1 10 -1 R DS ) (on 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 DC 10 -2 single pulse 0.01 10 -3 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-03-26 Final data SN7002N 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 1 A 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 7.5 0.75 0.625 10V 7V 6V 5V 4.5V 4.0V 3.7V 3.5V 3.0V Ω 6 5.25 4.5 3.75 3 2.25 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 0.5 0.375 0.25 1.5 0.125 0.75 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) ID 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 1 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 0.4 S 0.8 0.3 0.7 gfs V ID 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.1 0.2 0.1 0 0 0.05 0.8 1.6 2.4 3.2 4 4.8 6 0 0 0.2 0.4 0.6 0.8 A 1.1 VGS Page 5 ID 2003-03-26 Final data SN7002N 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V SN7002N 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =26µA 2.2 V 98% Ω 15 12 1.8 RDS(on) VGS(th) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 °C 1.6 typ. 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 180 0 -60 -20 20 2% 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 SN7002N A Ciss pF 10 -1 C 10 1 Coss IF 10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 V 30 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-03-26 Final data SN7002N 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.2 A pulsed, Tj = 25 °C 16 V SN7002N SN7002N 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 72 V V(BR)DSS nC 12 68 66 64 62 60 VGS 10 0.2 VDS max 0.5 VDS max 8 0.8 VDS max 6 4 58 56 54 -60 2 0 0 0.4 0.8 1.2 1.6 2 2.8 -20 20 60 100 °C 180 QG Tj Page 7 2003-03-26 Final data SN7002N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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