IGBT MODULE

www.DataSheet4U.com Preliminary SM2G50US60 FEATURES ' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 IGBT MODULE & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA G2 E2 C2E1 E2 C1 E1 G1 General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls Internal Circuit Diagram ABSOLUTE MAXIMUM RATINGS (Tc = 25 Symbol VCES VGES IC ICM (1) IF IFM PC Tj Tstg Viso ) Rating Units V V A A A A Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25 Pulsed Collector Current & & 20 50 100 50 100 250 -40 ~ 150 -40 ~ 125 2500 2.0 2.0 600 Diode Continuous Forward Current @ Tc = 25 Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25 Operating Junction Temperature Storage Temperature Range Isolation Voltage @ AC 1 min & & & V N.m N.m W Mounting Torque @ Power terminals screw :M5 Mounting screw :M5 Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature Rev.B ©1999 Fairchild Semiconductor Corporation Preliminary SM2G50US60 ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25 IGBT MODULE ,Unless Otherwise Specified) Characteristics C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage Symbol BVCES Test Conditions VGE = 0V , IC = 250 Min 600 - Typ Max 0.6 - Units V V/ ZV ZT  CES/ VGE = 0V , IC = 1mA  J VGE(th) ICES IGES VCE(sat) IC =50mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V 5 - 6 2.1 2.7 4200 400 120 90 65 184 80 1.5 0.9 2.4 - 8.5 250 100 2.7 250 4.8 - V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ uS Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Tsc Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Short Circuit withstand Time  Ic=50A, V = 15V @Tc=100 V = 0V , f = 1( Ic=50A, VGE = 15V @Tc= 25 GE GE VCE = 30V VCC = 300V , IC = 50A VGE = 15V RG = 13 - n Inductive Load Vcc = 300V, VGE = 15V @Tc = 100 10  220 50 90 330 nC nC nC Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Vcc = 300V VGE = 15V Ic = 50A Preliminary SM2G50US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25 IGBT MODULE ,Unless Otherwise Specified) Characteristics Diode Forward Voltage Symbol VFM Test Conditions IF=50A Min Min Typ 1.9 1.8 90 130 5 7 225 455 Max Units 2.8 130 6.5 422 nC A nS V Trr Diode Reverse Recovery Time IF=50A, VR=200V di/dt= -100A/uS Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge  Tc =100 Tc =25 Tc =100 Tc =25 Tc =100 Tc =25 Tc =100 Tc =25 THERMAL RESISTANCE Symbol R~JC R~JC R~CS Weight Characteristics Junction-to-Case(IGBT Part, Per 1/2 Module) Junction-to-Case(DIODE Part, Per 1/2 Module) Case-to-Sink ( Conductive grease applied) Weight of Module Typ - Max 0.5 1.0 0.15 190 Units /W /W /W /W Preliminary SM2G50US60 160 20V 15V 13V IGBT MODULE 160 20V 15V 13V COLLECTOR CURRENT IC [A] 12V COLLECTOR CURRENT IC [A] 120 120 12V 80 11V 80 11V VGE = 10V 40 VGE = 10V 40 Common Emitter Tc = 25 0 0 2 4 6  Common Emitter Tc = 125 0 10  8 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE [V] COLLECTOR-EMITTER VOLTAGE VCE [V] 160 Common Emitter Vge = 15V 160 Common Emitter Vce = 5V 120 Tc = 25 120  125  COLLECTOR CURRENT IC [A] COLLECTOR CURRENT IC [A] Tc = 25 80  125  80 40 40 0 0 1 2 3 4 5 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE [V] GATE-EMITTER VOLTAGE VGE [V] Preliminary SM2G50US60 16 Common Emitter Tc = 25 16 IGBT MODULE  Common Emitter Tc = 125  COLLECTOR-EMITTER VOLTAGE V CE [V] 12 COLLECTOR-EMITTER VOLTAGE V CE [V] 12 8 8 100 4 Ic = 20 A 50 100 4 Ic = 20 A 50 0 0 4 8 12 16 20 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE [V] GATE-EMITTER VOLTAGE VGE [V] 1 Tc = 25  1 Tc = 25  0.5 0.5 Thermal Response [Zthjc] [ /W]  0.2 0.1 0.1 0.05 IGBT Stage /W] 0.2 0.1 0.1 0.05 0.02 0.01 DIODE Stage 0.02 0.01 0.01 Thermal Response [Zthjc] [ 0.01 single pulse single pulse 1E-3 10 -5 1E-3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Rectangular Pulse Duration [sec] Preliminary SM2G50US60 160 Common Cathode Vge = 0V IGBT MODULE 10000 Cies 120 FORWARD CURRENT I F [A] Tc = 25 CAPACITANCE C [pF]  125  80 1000 Coes 40 Common Emitter Vge = 0V f = 1Mhz Tc = 25 0 0 1 2 3 4 Cres 100 1  10 30 FORWARD VOLTAGE VF [V] COLLECTOR-EMITTER VOLTAGE VCE [V] 400 Common Emitter RL = 6 Tc =25 16 4.0 Vcc = 300V Rg = 13 Tc = 125 +  14 3.5 +  Esw COLLECTOR-EMITTER VOLTAGE V CE [V) GATE-EMITTER VOLTAGE V GE [V] 300 12 3.0 10 2.5 ENERGY [mJ] 200 8 2.0 Eoff 1.5 Eon 1.0 6 100 4 2 0.5 0 0 50 100 150 200 0 0.0 0 10 20 30 40 50 CHARGE QG [nC] COLLECTOR - EMITTER CURRENT IC [A] Preliminary SM2G50US60 5 Vcc = 300V Ic = 50A Esw 4 Vcc = 300V Rg = 13 Vge = 15V IGBT MODULE +  IC = 50A 4 3 ENERGY [mJ] ENERGY [mJ] 3 Eon 2 2 Eoff 20A 1 1 5A 0 0 20 40 60 80 0 GATE - EMITTER RESISTANCE Rg [ +] 100 20 40 60 80 100 CASE TEMPERATURE TC [ ]  120 20 Common Cathode di/dt = -100A/ 0.5  PEAK REVERSE RECOVERY CURRENT Irr [A] REVERSE RECOVERY TIME Trr [x10ns] Trr COMMON EMITTER Vcc = 300V Vge = 15V Rg = 13  + SWITCHING TIME td(off) , tf [ 10 Irr ] td(off) 0.1 tf 5 2 0 10 20 30 40 : Tc = 25 : Tc = 125 & & 0.05 10 : Tc = 25 : Tc = 125 50 & & 100 50 FORWARD CURRENT IF [A] COLLECTOR CURRENT Ic [A] Preliminary SM2G50US60 0.1 Common Emitter Vcc = 300V Vge = 15V Rg =13 0.9 Common Emitter Vcc = 300V Vge = 15V Ic = 50A IGBT MODULE  +  td(off) ] SWITCHING TIME td(on) , tr [ td(on) SWITCHING TIME td(off) , tf [ ] tf 0.1 tr : Tc = 25 : Tc = 125 0.01 10 50   100 0.05 10 : Tc = 25 : Tc = 125 & & COLLECTOR CURRENT IC (A) GATE RESISTANCE RG [ +] 100 0.5 Common Emitter Vcc = 300V Vge = 15V Ic = 50A 300  td(on) Ic MAX. (Pulsed) 100 50 COLLECTOR CURRENT IC [A] ] Ic MAX. (Continuos) 100 30 1ms  SWITCHING TIME td(on) , tr [ tr  0.1 10 DC Operation 3 0.01 10 : Tc = 25 : Tc = 125 & & 1 GATE RESISTANCE RG [ +] 100 0.3 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VCE [V] Preliminary SM2G50US60 200 Tj 125 Vge = 15V Rg = 13 IGBT MODULE  &  + L [A] 150 Vcc COLLECTOR CURRENT I C Rg +/- 15V 100 90% Vge 10% 50 Vce 90% Ic 10% Td(off) Tf Td(on) Tr 0 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VCE [V] Inductive Load Test Circuit and Waveforms 7-PM-AA   * (       ( *      = 0RXQWLQJ+ROH   0 '3      7$3 7(50,1$/ W 1$0( 3/$7( 0D[    Unit : mm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or © whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. LIFE SUPPORT POLICY Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production