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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16G48,USM16G48,SM16J48,USM16J48 SM16G48A,USM16G48A,SM16J48A,USM16J48A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage :VDRM=400, 600V l R.M.S On-State Current l Gate Trigger Current :IT (RMS)=16A :IGT=30mA Max. :IGT=20mA Max. (“A”Type) Unit in mm SM16G48, SM16J48, SM16G48A, SM16J48A USM16G48, USM16J48, USM16G48A, USM16J48A
JEDEC JEITA TOSHIBA
― ― 13-10J1A
JEDEC JEITA TOSHIBA
― ― 13-10J2A Weight : 1.7g
MARKING
NUMBER *1 *2 SYMBOL SM16G48, SM16G48A, USM16G48, USM16G48A TYPE SM16J48, SM16J48A, USM16J48, USM16J48A SM16G48A,SM16J48A,USM16G48A,USM16J48A MARK M16G48 M16J48 A
*3
Example 8A : January 1998 8B : February 1998 8L : December 1998
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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC (U)SM12G48 (U)SM12G48A (U)SM12J48 (U)SM12J48A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg
2
UNIT
Repetitive Peak Off-State Voltage
V
R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range
2
16 150 (50Hz) 165 (60Hz) 112.5 50 5 0.5 10 2 −40~125 −40~125
A A A s A / ms W W V A °C °C
2
Note 1 : VDRM=0.5×Rated ITM≤25A tgw≥10ms tgr≤250ns igp=IGT×2.0
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Repetitive Peak Off-State Current I Gate Trigger Voltage II III IV I (U)SM16G48 (U)SM16J48 Gate Trigger Current (U)SM16G48A (U)SM16J48A II III IV I II III IV Peak On-State Voltage Gate Non-Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off-State Voltage (U)SM16G48 (U)SM16J48 (U)SM16G48A (U)SM16J48A (U)SM16G48 (U)SM16J48 (U)SM16G48A (U)SM16J48A VTM VGD IH Rth (j-c) ITM=17A VD=Rated, Tc=125°C VD=12V, ITM=1A Junction to Case, AC VDRM=Rated, Tj=125°C Exponential Rise IGT VD=12V RL=20W VGT VD=12V RL=20W SYMBOL IDRM TEST CONDITION VDRM=Rated T2 (+) , Gate (+) T2 (+) , Gate (-) T2 (-) , Gate (-) T2 (-) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (-) T2 (-) , Gate (-) T2 (-) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (-) T2 (-) , Gate (-) T2 (-) , Gate (+) MIN. ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ― ― 10 4 TYP. ― ― ― ― ― ― ― ― 50 ― ― ― ― ― ― ― ― 300 200 ― ― MAX. 20 1.5 1.5 1.5 ― 30 30 30 ― 20 20 20 ― 1.5 ― 50 2.0 ― V / ms ― ― V / ms ― ― V mA °C / W mA V UNIT mA
dv / dt
Critical Rate of Rise of Off-State Voltage at Commutation
(dv / dt) c
VDRM=400V, Tj=125°C (di / dt) c=−8.7A / ms
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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.
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