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Part Number |
SKM40GD124D |
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Manufacturer |
Semikron International |
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Semiconductor DataSheet |
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DataSheet View |
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SKM 40GD124D
www.DataSheet4U.com
Absolute Maximum Ratings Symbol Conditions IGBT
Values
Units
Sixpack Low Loss IGBT Modules
SKM 40GD124D
Inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Features
Inverse diode
Thermal characteristics
Typical Applications
Mechanical data
GD
1
14-06-2005 SEN
© by SEMIKRON
SKM 40GD124D
www.DataSheet4U.com
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-06-2005 SEN
© by SEMIKRON
SKM 40GD124D
www.DataSheet4U.com
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
© by SEMIKRON
SKM 40GD124D
www.DataSheet4U.com
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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14-06-2005 SEN
© by SEMIKRON
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