N-Channel 60-V (D-S) Fast Switching MOSFET

Si7850DP New Product Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 10.3 8.7 rDS(on) (W) 0.022 @ VGS = 10 V 0.031 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 60 "20 10.3 Steady State Unit V 6.2 4.5 1.5 40 15 11 mJ 1.8 0.9 –55 to 150 W _C A ID IS IDM IAS EAS 7.5 3.7 4.5 PD TJ, Tstg 2.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Guaranteed by design, not subject to production testing. Document Number: 71625 S-03828—Rev. A, 28-May-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 22 58 2.6 Maximum 28 70 3.3 Unit _C/W C/W 1 Si7850DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10.3 A VGS = 4.5 V, ID = 8.7 A VDS = 15 V, ID = 10.3 A IS = 3.8 A, VGS = 0 V 40 0.018 0.025 26 0.85 1.2 0.022 0.031 S V 60 V 1 "100 1 20 nA m mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.8 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 30 V, VGS = 10 V, ID = 10.3 A 18 3.4 5.3 1.4 10 10 25 12 50 20 20 50 24 80 ns W 27 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 40 Transfer Characteristics 24 4V 16 24 16 TC = 150_C 8 25_C –55_C 8 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71625 S-03828—Rev. A, 28-May-01 Si7850DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 1400 1200 C – Capacitance (pF) 1000 800 600 400 200 0 0 8 16 24 32 40 0 Crss 10 20 30 40 50 60 Coss Ciss Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.05 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 0.00 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 30 V ID = 10.3 A 2.0 1.8 r DS(on) – On-Resistance (W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 –50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10.3 A 8 6 4 2 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.06 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 10 TJ = 25_C 0.04 ID = 10.3 A 0.03 0.02 0.01 1 0.00 0.5 1.0 1.5 2.0 2.5 0.00 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71625 S-03828—Rev. A, 28-May-01 www.vishay.com 3 Si7850DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 –0.0 –0.2 –0.4 –0.6 20 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) ID = 250 mA Power (W) 80 100 Single Pulse Power V GS(th) Variance (V) 60 40 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 58_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 www.vishay.com 4 Document Number: 71625 S-03828—Rev. A, 28-May-01