Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 FEATURES ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.30 mm A S 3 4 K G G K 8 7 3 kW D 6 5 D D P-Channel MOSFET A Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a _ Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 71429 S-03709—Rev. A, 14-May-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 10 sec –20 20 "12 –6.3 –4.5 –20 –2.3 1.0 7 2.8 1.5 2.0 1.0 Steady State Unit V "12 –4.3 –3.1 A –1.1 1.3 0.7 1.1 0.6 –55 to 150 _C W 1 Si7703EDN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta Steady State New Product Device MOSFET Schottky MOSFET Schottky MOSFET Symbol Typical 35 51 Maximum 44 64 94 115 5 12 Unit RthJA 75 91 4 _C/W _ Junction-to-Case (Drain) Steady State Schottky RthJC 10 Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = –800 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 85_C VDS v –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –6.3 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –5.3 A VGS = –1.8 V, ID = –1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –10 V, ID = –6.3 A IS = –2.3 A, VGS = 0 V –20 0.041 0.057 0.072 14 –0.8 –1.2 0.048 0.068 0.090 S V W –0.45 "1.5 "100 –1 –5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –10 V, VGS = –4.5 V, ID = –6.3 A 12 2.5 2.9 2.5 4 15 12 4 6 23 18 ns n 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.42 0.33 0.002 0.10 1.5 31 Max 0.48 0.4 0.100 1 10 Unit V Maximum Reverse Leakage Current Irm CT mA Junction Capacitance pF www.vishay.com 2 Document Number: 71429 S-03709—Rev. A, 14-May-01 Si7703EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 1,000 I GSS – Gate Current (mA) 6 I GSS – Gate Current (mA) 100 10 1 0.1 TJ = 150_C Vishay Siliconix MOSFET Gate Current vs. Gate-Source Voltage 4 2 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20 Transfer Characteristics TC = –55_C 25_C 125_C 12 12 2V 8 1.5 V 4 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 VGS = 1.8 V 0.12 C – Capacitance (pF) 2000 Capacitance r DS(on) – On-Resistance ( W ) 1600 Ciss 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 1200 800 400 Crss 0 4 Coss 0.00 0 4 8 12 16 20 0 8 12 16 20 ID – Drain Current (A) Document Number: 71429 S-03709—Rev. A, 14-May-01 VDS – Drain-to-Source Voltage (V) www.vishay.com 3 Si7703EDN Vishay Siliconix New Product MOSFET On-Resistance vs. Junction Temperature 1.5 VDS = 10 V ID = 6.3 A VGS = 4.5 V ID = 6.3 A 1.3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS – Gate-to-Source Voltage (V) 3 r DS(on) – On-Resistance (W) (Normalized) 4 1.1 2 0.9 1 0 0 2 4 6 8 10 12 14 0.7 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.14 0.12 10 I S – Source Current (A) r DS(on) – On-Resistance ( W ) 0.10 0.08 0.06 0.04 0.02 1 0 0.3 0.6 0.9 1.2 1.5 1.8 0.00 0 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C ID = 6.3 A 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 800 mA 50 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 40 0.2 Power (W) 30 0.1 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) www.vishay.com 4 Document Number: 71429 S-03709—Rev. A, 14-May-01 Si7703EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix MOSFET 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75_C/W 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.1 0.05 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R – Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F – Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 TJ – Junction Temperature (_C) Document Number: 71429 S-03709—Rev. A, 14-May-01 VF – Forward Voltage Drop (V) www.vishay.com 5 Si7703EDN Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 150 Capacitance CT – Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA – Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 www.vishay.com 6 Document Number: 71429 S-03709—Rev. A, 14-May-01