N-Channel 200-V (D-S) MOSFET

Si7450DP New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 5.3 5.0 rDS(on) (W) 0.080 @ VGS = 10 V 0.090 @ VGS = 6 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V DC/DC D Industrial and 42-V Automotive D PowerPAKt SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 G N-Channel MOSFET D 8 7 6 5 D D D Bottom View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 200 "20 5.3 Steady State Unit V 3.2 2.6 40 15 A ID IDM IAS IS PD TJ, Tstg 4.3 4.3 5.2 3.3 –55 to 150 1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71432 S-03475—Rev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W C/W 1 Si7450DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.0 A rDS(on) VGS = 6.0 V, ID = 4.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 5 A IS = 2.8 A, VGS = 0 V 40 0.065 0.070 19 0.75 1.2 0.080 0.090 W S V 2.0 "100 1 5 V nA mA m A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = 2.8 A, di/dt = 100 A/ms VDD = 100 V, RL = 25 W ID ^ 4.0 A, VGEN = 10 V, RG = 6 W VDS = 100 V, VGS = 10 V, ID = 4.0 A 34 7.5 12.0 14 20 32 25 0.85 70 100 20 30 50 35 W ns ns 42 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V 32 30 I D – Drain Current (A) I D – Drain Current (A) 24 25 20 15 10 5 4V 0 0 2 4 6 8 10 0 0 1 40 35 Transfer Characteristics 16 TC = 125_C 25_C –55_C 2 3 4 5 6 8 5V VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71432 S-03475—Rev. B, 16-Apr-01 www.vishay.com 2 Si7450DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) – On-Resistance ( W ) 2500 Vishay Siliconix Capacitance 0.15 C – Capacitance (pF) 2000 Ciss 1500 0.10 VGS = 6 V 1000 VGS = 10 V 0.05 500 Crss Coss 0.00 0 8 16 24 32 40 0 0 40 80 120 160 200 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 20 V GS – Gate-to-Source Voltage (V) VDS = 100 V ID = 4.0 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.0 A 2.0 12 r DS(on) – On-Resistance (W) (Normalized) 30 45 60 1.5 8 1.0 4 0.5 0 0 15 Qg – Total Gate Charge (nC) 0.0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.20 ID = 4.0 A 0.15 I S – Source Current (A) TJ = 150_C 10 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71432 S-03475—Rev. B, 16-Apr-01 www.vishay.com 3 Si7450DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 100 Single Pulse Power, Juncion-To-Ambient 0.5 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0 80 60 –0.5 40 –1.0 20 –1.5 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71432 S-03475—Rev. B, 16-Apr-01 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.