P-Channel MOSFET

www.DataSheet4U.com Si5475BDC New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.028 at VGS = - 4.5 V - 12 0.039 at VGS = - 2.5V 0.054 at VGS = - 1.8 V ID (A)a -6 -6 -6 15.5 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET: 1.8-V Rated RoHS COMPLIANT 1206-8 ChipFET S 1 D D D D S D D Ordering Information: Si5475BDC-T1—E3 (Lead (Pb)−free) G Marking Code G BN XXX Lot Traceability and Date Code Part # Code P-Channel MOSFET D Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 12 ±8 - 6a - 6a - 7.7b,c - 6.2b,c - 20 - 5.2 - 1.3b,c 6.3 4 2.5b,c 1.6b,c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d,e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) b, f t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 40 15 Maximum 50 20 Unit °C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The 1206 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 95 °C/W. Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.vishay.com 1 www.DataSheet4U.com Si5475BDC Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 6.2 A, di/dt = 100 A/µs, TJ = 25 °C IS = - 6.2 A, VGS = 0 V - 0.9 45 27 15 30 TC = 25 °C - 5.2 - 20 - 1.2 70 42 A V ns nC ns VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 6 V, RL = 0.97 Ω ID ≅ - 6.2 A, VGEN = - 8 V, Rg = 1 Ω VDD = - 6 V, RL = 0.97 Ω ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz VDS = - 6 V, VGS = - 8 V, ID = - 6 A VDS = - 6 V, VGS = - 4.5 V, ID = - 6 A VDS = - 6 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.6 A VGS = - 2.5 V, ID = - 4.7 A VGS = - 1.8 V, ID = - 1.9 A VDS = - 6 V, ID = - 6.9 A - 20 0.023 0.032 0.044 22 1400 370 260 26 15.5 2.1 4.0 9 10 38 62 70 5 15 65 72 15 60 95 105 10 25 100 110 ns Ω 40 24 nC pF 0.028 0.039 0.054 S Ω - 0.45 - 12 -7 2.5 - 1.0 ± 100 -1 - 10 V mV/°C V ns µA A Symbol Test Condition Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.DataSheet4U.com Si5475BDC New Product TYPICAL CHARACTERISTICS 20 VGS = 5 thru 2 V I D − Drain Current (A) I D − Drain Current (A) 16 8 Vishay Siliconix 25 °C unless noted 10 12 6 8 1.5 V 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 TC = 125 °C 2 25 °C - 55 °C 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Output Characteristics 0.12 2100 1800 C − Capacitance (pF) 1500 1200 900 600 300 VGS = 4.5 V 0.00 0 4 8 12 16 20 0 0 2 Crss Transfer Characteristics rDS(on) − On-Resistance (m ) 0.10 Ciss 0.08 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 Coss 0.02 4 6 8 10 12 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 V GS − Gate-to-Source Voltage (V) 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 VDS = 8.4 V VDS = 6 V ID = 7.7 A rDS(on) − On-Resistance (Normalized) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 - 50 Capacitance VGS = 4.5, 2.5, 1.8 V ID = 7.7 A - 25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.vishay.com 3 www.DataSheet4U.com Si5475BDC Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted rDS(on) − Drain-to-Source On-Resistance (m ) 20 0.10 ID = 5.6 A 0.08 10 I S − Source Current (A) TJ = 150 °C 0.06 TA = 25 °C 0.04 TA = 125 °C TJ = 25 °C 0.02 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD − Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 50 On-Resistance vs. Gate-to-Source Temperature 0.9 ID = 250 µA VGS(th) (V) Power (W) 0.8 40 30 0.7 20 0.6 10 0.5 0 0.001 0.4 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (°C) Threshold Voltage 100 *Limited by rDS(on) 10 I D − Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse dc Single Pulse Power, Junction-to-Ambient 0.1 0.01 0.1 *VGS 1 10 100 VDS − Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.DataSheet4U.com Si5475BDC Vishay Semiconductors TYPICAL CHARACTERISTICS 25 °C unless noted 16 14 12 ID − Drain Current (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 Package Limited Power Dissipation (W) 8 7 6 5 4 3 2 1 0 25 50 75 100 125 150 TC − Case Temperature (°C) T C − Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.vishay.com 5 www.DataSheet4U.com Si5475BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 °C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73381. www.vishay.com 6 Document Number: 73381 S-60384–Rev. B, 13-Mar-06 www.DataSheet4U.com Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. 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