Dual N-Channel 30-V (D-S) MOSFET

www.DataSheet4U.com Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (Ω) 0.023 at VGS = 10 V 0.032 at VGS = 4.5 V 0.020 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A) 7.0 5.6 7.4 6.4 FEATURES • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg Tested APPLICATIONS • Logic DC/DC - Notebook PC RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.40 V at 1.0 A IF (A) 2.0 D1 SO-8 D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2 G1 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 mH Avalanche Energy Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 1.9 1.2 1.7 13 8.45 1.1 0.71 2.0 1.3 - 55 to 150 7.0 5.6 40 1.0 1.8 15 11 1.16 0.74 mJ W °C 5.5 4.3 Channel-1 10 sec Steady State 30 20 7.4 6 40 0.95 5.7 4.5 A Channel-2 10 sec Steady State Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 1 t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF Channel-1 Typ 52 90 30 Max 65 112 38 47 85 28 Channel-2 Typ Max 60 107 35 °C/W Unit Si4914DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 5.6 A VGS = 4.5 V, ID = 6.4 A VDS = 15 V, ID = 7.0 A VDS = 15 V, ID = 7.4 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1.0 1.0 2.5 2.5 100 100 1 500 0.015 20 V nA µA mA A 0.019 0.016 0.026 0.022 19 22 0.75 0.36 5.6 7.3 2.3 2.8 1.7 2.2 2.3 1.6 6 7 13 13 27 35 9 10 30 30 0.023 0.020 0.032 0.027 Symbol Test Conditions Min Typa Max Unit 20 20 Drain-Source On-State Resistanceb rDS(on) Ω Forward Transconductanceb Diode Forward Voltageb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time gfs VSD S 1.1 0.40 8.5 11 nC V Qg Qgs Qgd Rg td(on) tr td(off) tf trr Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 7.0 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 7.4 A 0.5 0.5 Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.3 A, di/dt = 100 A/µs IF = 2.2 A, di/dt = 100 µA/µs 3.6 2.5 10 11 20 20 40 53 15 15 50 50 Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Test Conditions IF = 1.0 A IF = 1.0 A, TJ = 150 °C Vr = 30 V Vr = 30 V, TJ = 100 °C Vr = - 30 V, TJ = 125 °C Vr = 10 V Min Typ 0.36 0.27 0.008 3.5 10 58 Max 0.40 0.31 0.50 10 100 Unit V Maximum Reverse Leakage Current Junction Capacitance Irm CT mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 40 35 I D – Drain Current (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 0 0.0 3V I D – Drain Current (A) VGS = 10 thru 4 V 32 25 °C, unless noted 40 24 16 TC = 125 °C 8 25 °C - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.05 1000 Transfer Characteristics DS(on) – On-Resistance (Ω) C – Capacitance (pF) 0.04 800 Ciss 0.03 VGS = 4.5 V VGS = 10 V 0.02 600 400 r 0.01 200 Coss Crss 0.00 0 5 10 15 20 25 30 35 40 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 7 A rDS(on) – On-Resistance (Normalized) 1.8 VGS = 10 V ID = 7 A Capacitance 5 1.6 4 1.4 3 1.2 2 1.0 1 0.8 0 0.0 1.5 3.0 4.5 6.0 7.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 3 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 40 0.10 TJ = 150 °C 10 DS(on) – On-Resistance (Ω) 0.08 I S – Source Current (A) 0.06 TJ = 25 °C 0.04 ID = 7 A 0.02 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 200 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) ID = 250 µA Power (W) 0.0 160 120 - 0.2 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited IDM Limited 10 I D – Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 °C Single Pulse BVDSS Limited 1s 10 s dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 90 °C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 5 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 40 35 30 I D – Drain Current (A) I D – Drain Current (A) 25 3V 20 15 10 5 0 0 1 2 3 4 5 VGS = 10 thru 4 V 40 35 30 25 20 15 TC = 125 °C 10 5 0 0.0 25 °C - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.040 0.035 r DS(on) – On-Resistance (Ω) 1120 C – Capacitance (pF) 0.030 0.025 0.020 0.015 0.010 280 0.005 0.000 0 5 10 15 20 25 30 35 40 0 0 5 Crss VGS = 10 V VGS = 4.5 V 1400 Transfer Characteristics Ciss 840 560 Coss 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 7.4 A rDS(on) – On-Resistance (Normalized) 1.8 VGS = 10 V ID = 7.4 A Capacitance 5 1.6 4 1.4 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 40 0.10 10 TJ = 150 °C DS(on) – On-Resistance (Ω) 0.08 I S – Source Current (A) 0.06 0.04 ID = 7.4 A 0.02 TJ = 25 °C r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 100 200 On-Resistance vs. Gate-to-Source Voltage I R – Reverse Current (mA) 10 Power (W) 160 1 120 0.1 80 0.01 40 0.001 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (°C) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited IDM Limited 10 I D – Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 °C Single Pulse BVDSS Limited 1s 10 s dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 7 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot