Microwave Silicon Components

www.DataSheet4U.com MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS New f it o ogy Spir nol Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4 All specifications contained in that catalog are subject to change without notice. SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28 TUNING VARACTORS DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-31 POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40 CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47 MOS CAPACITORS: Please consult page 7-39 of this catalog SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-1 Vol. 1 www.DataSheet4U.com MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEMEX product lines including: • • • • • • receiving diodes control diodes tuning varactors multiplier varactors step recovery diodes high voltage PIN diodes TEMEX products are available in a complete assortment of packages including: • • • • • chips standard surface mount ceramic and plastic non magnetic custom IN-HOUSE PRODUCTION The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer, TEMEX performs all functions, including: • • • • • • • • epitaxy diffusion photomasking metallization passivation dicing packaging control and burn-in TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all junction passivations, and all mesa operations. 12-2 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net www.DataSheet4U.com MICROWAVE SILICON COMPONENTS Symbols SYMBOLS Cb Cj CT CX/Cy f FCO FI FIF FO Foper IF IR IRP L N/A NFSSB NFIF ∅ PCW Pdiss Pin PL PLO PO PRF Q-X RSF Rth RV TCR Tj tSO TSS VBR VF VR VSWR VT VTO ZIF ZO .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... .................................... Case Capacitance Junction Capacitance Total Capacitance Tuning Ratio Test Frequency Cut-off Frequency Frequency Input Intermediate Frequency Output Frequency Operating frequency Forward Continuous Current Reverse Continuous Current Reverse Pulse Current Conversion Loss Not Applicable Single Sideband Noise Figure Noise Figure of Intermediate Frequency Gold Contact Diameter CW Power Capability Power Dissipation Power Input Limiting Threshold Local Oscillator Power Output Power RF Power Figure of Merit Forward Series Resistance Thermal Resistance Video Resistance Minority Carrier Lifetime Reverse Switching Time Junction Temperature Snap-off Time Tangential Sensitivity Breakdown Voltage Forward Continuous Voltage Applicable Voltage (RF + bias) Voltage Standing Wave Ratio Forward Threshold Voltage Threshold Voltage Impedance at Intermediate Frequency Output Impedance 12-3 Vol. 1 τI SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net www.DataSheet4U.com SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES - SQUARE CERAMIC PIN DIODES - NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES 12-5 12-6 12-8 12-10 12-12 12-15 HIGH VOLTAGE PIN DIODES - SWITCHING & PHASE SHIFTING APPLICATIONS - TWO AND THREE PORTS RF PIN SWITCH MODULES 12-17 12-18 12-20 MICROWAVE APPLICATIONS - ULTRAFAST SWITCHING SILICON PIN DIODES - FAST SWITCHING SILICON PIN DIODES - ATTENUATOR SILICON PIN DIODES - SILICON LIMITER PIN DIODES 12-22 12-23 12-24 12-25 12-26 12-4 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net www.DataSheet4U.com SILICON PIN DIODES How to specify a PIN diode HOW TO SPECIFY A PIN DIODE ? To obtain the PIN diodes best suited for a specific application, consider the following: 1. Application • • • switch attenuator limiter 8. Maximum loss expected 9. Minimum isolation needed 10. VSWR and distortion requirements 11. Power applied to the diode • forward biased reverse biased during switching 2. 3. Frequency and bandwidth requirements Power characteristics • • • peak average pulse duration and duty cycle • • 12.Static characteristics 4. 5. Switching time Bias conditions • • forward reverse • • applicable voltage: VR total capacitance: CT (in space charge) • • forward series resistance: RSF carrier lifetime τl 6. 7. Circuit impedance Shunt or series assembly • thermal resistance: Rth 13. Mechanical and packaging constraints SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-5 Vol. 1 www.DataSheet4U.com SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of this technology eliminates wire bonding on to the chips. Applications The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF) and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching time and low switching current. TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak power, RF and microwave applications (up to 3 GHz). Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems) and filter switches, phase shifters .... Note: To reduce the distortion, it is necessary to verify and design with the following formula: ÎHF πτl IDC F << 1 ÎHF : RF peak current (A) Diode minority carrier lifetime (s) DC bias current (A) Application frequency (Hz) τl : IDC : πF : 12-6 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net www.DataSheet4U.com SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes Characteristics @ Ta = +25° C PACKAGED DIODES Breakdown voltage (VBR (1)) Test conditions Type DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 Total capacitance (CT (2)) F = 1 MHz VR = 50 V pF max 0.3 (3) 1 (3) 0.35 (4) 0.35 1.2 0.35 1.2 0.6 Series resistance (RSF) IF = 10 mA F = 120 MHz Ω max 2.5 0.5 1.5 3 0.6 3 0.6 2 (5) Minority carrier lifetime (τI) IF = 10 mA IR = 6 mA ns typ. 150 200 200 500 1000 500 1000 2000 IR = 10 µA V min. 35 35 50 100 100 200 200 400 (1) : Other breakdown values on request (2) : Other capacitance values on request (3) : VR = 5 V at F = 1 MHz Temperature ranges: Operating junction (Tj) : Packages SOD323 Packages SOT23 SOT23 -55° C to +125° C Storage : (4) (5) : VR = 20 V at F = 1 MHz : RSF at IF = 5 mA -55° C to +150° C SOT23 SOT143 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 DH50051-60 DH50058-60 DH50053-60 DH50103-60 DH50109-60 DH50203-60 DH50209-60 DH80051-60 DH50051-51 DH50058-51 DH50053-51 DH50103-51 DH50109-51 DH50203-51 DH50209-51 DH80051-51 DH50051-53 DH50058-53 DH50053-53 DH50103-53 DH50109-53 DH50203-53 DH50209-53 DH80051-53 DH50051-54 DH50058-54 DH50053-54 DH50103-54 DH50109-54 DH50203-54 DH50209-54 DH80051-54 DH50051-70 DH50058-70 DH50053-70 DH50103-70 DH50109-70 DH50103-70 DH50209-70 DH80051-70 (1) Other configuration available on request. How to order? DH50051 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-7 Vol. 1 www.DataSheet4U.com SILICON PIN DIODES Plastic package Surface Mount attenuating silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT ATTENUATING SILICON PIN DIODES Description TEME