High frequency operational amplifier

RF COMMUNICATIONS PRODUCTS NE/SE5539 High frequency operational amplifier Product specification IC11 April 15, 1992 Philips Semiconductors Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 DESCRIPTION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements. PIN CONFIGURATION D, F, N Packages 1 2 3 4 5 6 7 + – 14 13 12 11 + INPUT NC -VSUPPLY NC - INPUT NC FREQUENCY COMPENS. NC FEATURES • Bandwidth – Unity gain - 350MHz – Full power - 48MHz – GBW - 1.2GHz at 17dB VOSADJ / AV ADJ NC GROUND 10 +V 9 8 NC OUTPUT • Slew rate: 600/Vµs • AVOL: 52dB typical • Low noise - 4nV√Hz typical • MIL-STD processing available APPLICATIONS Top View SL00570 Figure 1. Pin Configuration • High speed datacom • Video monitors & TV ORDERING INFORMATION DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Plastic Small Outline (SO) package 14-Pin Ceramic Dual In-Line Package 14-Pin Ceramic Dual In-Line Package • Satellite communications • Image processing • RF instrumentation & oscillators • Magnetic storage • Military communications TEMPERATURE RANGE 0 to +70°C 0 to +70°C 0 to +70°C -55 to +125°C ORDER CODE NE5539N NE5539D NE5539F SE5539F DWG # SOT27-1 SOT108-1 0581B 0581B ABSOLUTE MAXIMUM RATINGS1 SYMBOL VCC PDMAX Supply voltage Maximum power dissipation, TA = 25°C (still-air)2 F package N package D package Operating temperature range NE SE Storage temperature range Max junction temperature Lead soldering temperature (10sec max) PARAMETER RATING ±12 UNITS V 1.17 1.45 0.99 0 to 70 -55 to +125 -65 to +150 150 +300 W W W °C °C °C °C °C TA TSTG TJ TSOLD NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25°C, at the following rates: F package at 9.3mW/°C N package at 11.6mW/°C D package at 7.9mW/°C 1992 Apr 15 2 853-0814 06456 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 EQUIVALENT CIRCUIT (12) FREQUENCY COMP. (10) +VCC R18 (–) 14 INVERTING INPUT R19 R3 R5 R2 (+) 1 NON–INVERTING INPUT R6 Q1 Q2 Q4 Q6 R8 Q5 Q3 Q7 Q8 R20 R21 R1 R4 R9 R10 2.2k (8) OUTPUT (7) GRD R13 Q10 R11 Q11 R12 R15 R14 R16 R17 (3) –VCC 5 R7 Q9 SL00571 Figure 2. Equivalent Circuit DC ELECTRICAL CHARACTERISTICS VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL VOS PARAMETER Input offset voltage ∆VOS/∆T Over temp IOS Input offset current ∆IOS/∆T Over temp IB Input bias current ∆IB/∆T CMRR RIN ROUT Common mode rejection ratio Input impedance Output impedance F = 1kHz, RS = 100Ω, VCM ±1.7V Over temp 70 70 TA = 25°C TA = 25°C TEST CONDITIONS Over temp VO = 0V RS = 100Ω 0V, TA = 25°C SE5539 MIN TYP 2 2 5 0.1 0.1 0.5 6 5 10 80 80 100 10 100 10 70 25 13 5 10 80 20 3 1 0.5 2 MAX 5 3 2.5 5 5 mV µV/°C µA nA/°C µA nA/°C dB kΩ Ω MIN NE5539 TYP MAX UNITS 1992 Apr 15 3 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 DC ELECTRICAL CHARACTERISTICS (Continued) VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL VOUT PARAMETER Output voltage swing TEST CONDITIONS RL = 150Ω to GND and 470Ω to -VCC RL = 25Ω to GND Over temp RL = 25Ω to GND TA = 25°C +Swing -Swing +Swing -Swing +Swing -Swing +2.3 -1.5 +2.5 -2.0 +3.0 -2.1 +3.1 -2.7 14 14 11 11 300 18 17 15 14 1000 200 47 52 1000 57 11 15 14 18 SE5539 MIN TYP MAX MIN +2.3 -1.7 NE5539 TYP +2.7 -2.2 MAX UNITS V VOUT Output voltage swing V ICC CC+ ICC CCPSRR AVOL AVOL Positive supply current Negative supply current Power supply rejection ratio Large signal voltage gain Large signal voltage gain VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C ∆VCC = ±1V, Over temp ∆VCC = ±1V, TA = 25°C VO = +2.3V, -1.7V, RL = 150Ω to GND, 470Ω to -VCC VO = +2.3V, -1.7V RL = 2Ω to GND Over temp TA = 25°C Over temp TA = 25°C 46 48 mA mA µV/V dB dB 47 60 53 58 52 57 dB AVOL Large signal voltage gain VO = +2.5V, -2.0V RL = 2Ω to GND DC ELECTRICAL CHARACTERISTICS VCC = ±6V, TA = 25°C; unless otherwise specified. SYMBOL VOS IOS IB CMRR ICC CC+ ICC CCPSRR PARAMETER Input offset voltage Input offset current Input bias current Common-mode rejection ratio Positive supply current Negative supply current Power supply rejection ratio ∆VCC = ±1V Over VOUT Output voltage swing O l i RL = 150Ω to GND and 390Ω to –VCC temp TA = 25°C VCM = ±1.3V, RS = 100Ω Over temp TA = 25°C Over temp TA = 25°CmA Over temp TA = 25°C +Swing –Swing +Swing –Swing +1.4 –1.1 +1.5 –1.4 +2.0 –1.7 +2.0 –1.8 V TEST CONDITIONS Over temp TA = 25°C Over temp TA = 25°C Over temp TA = 25°C 70 SE5539 MIN TYP 2 2 0.1 0.1 5 4 85 11 11 8 8 300 14 13 11 10 1000 MAX 5 3 3 1 20 10 UNITS mV µA µA dB mA mA µV/V 1992 Apr 15 4 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 AC ELECTRICAL CHARACTERISTICS VCC = ±8V, RL = 150Ω to GND and 470Ω to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response Full power response Input noise voltage Input noise current NOTES: 1. External compensation. TEST CONDITIONS ACL = 7, VO = 0.1 VP-P ACL = 2, RL = 150Ω1 ACL = 2, RL = 150Ω1 ACL = 2, RL = 150Ω1 ACL = 2, RL = 150Ω1 ACL = 2, RL = 150Ω1 AV = 7, RL = 150Ω1 RS = 50Ω, 1MHz 1MHz SE5539 MIN TYP 1200 110 15 600 7 48 20 4 6 MAX MIN NE5539 TYP 1200 110 15 600 7 48 20 4 6 MAX UNITS MHz MHz ns V/µs ns MHz MHz nV/√Hz pA/√Hz AC ELECTRICAL CHARACTERISTICS VCC = ±6V, RL = 150Ω to GND and 390Ω to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response NOTES: 1. External compensation. TEST CONDITIONS ACL = 7 ACL = 21 ACL = 21 ACL = 21 ACL = 21 ACL = 21 SE5539 MIN TYP 700 120 23 330 4.5 20 MAX UNITS MHz ns V/µs ns MHz TYPICAL PERFORMANCE CURVES NE5539 Open-Loop Phase 60 0 50 40 GAIN (dB) NE5539 Open-Loop Gain PHASE (DEG) 90 30 180 20 270 10 360 1 MHz 0 1 MHz 10MHz 100MHz 1GHz 10MHz 100MHz 1GHz FREQUENCY (Hz) SL00572 FREQUENCY (Hz) SL00573 Figure 3. NE5539 Open-Loop Phase Figure 4. NE5539 Open-Loop Gain 1992 Apr 15 5 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 TYPICAL PERFORMANCE CURVES (Continued) Power Bandwidth (SE) 4 5 3 p–p OUTPUT (V) 4 3dB B.W 3 GAIN (—2) VCC = +8V RL = 2kΩ p–p OUTPUT (V) 3dB B.W. 2 VCC = +6V RL = 150kΩ GAIN (—2) Power Bandwidth (NE) 1 2 0 1 MHz 10MHz FREQUENCY (Hz) 100MHz 300Mhz 10MHz FREQUENCY (Hz) 100MHz 300Mhz 1 1 MHz SE5539 Open-Loop Gain vs Frequency REF 3.04V P-P dB BELOW REF –2 –4 –6 –8 GAIN (–7) RL = 150Ω –12 10MHz FREQUENCY (Hz) 100MHz 300Mhz 1MHz Power Bandwidth 50 40 GAIN (dB) 30 20 10 0o 1 MHz VCC = +6V RL = 126Ω –10 10MHz FREQUENCY (Hz) 100MHz 300MHz SE5539 Open-Loop Phase vs Frequency Gain Bandwidth Product vs Frequency 0° PHASE (DEG) GAIN (dB) 45° 90° VCC = ±6V RL = 126Ω 10MHz FREQUENCY (Hz) 100MHz 300MHz 22 20 18 16 AV = X10 VCC = ±6V RL = 150Ω AV = X7.5 3dB BANDWIDTH 135° 180° 1MHz 3dB BANDWIDTH 14 12 1MHz 10MHz FREQUENCY (Hz) 100MHz 300MHz NOTE: Indicates typical distribution –55°C ≤ TA ≤ 125°C SL00574 Figure 5. Typical Performance Curves 1992 Apr 15 6 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 CIRCUIT LAYOUT CONSIDERATIONS As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical. Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28dB non-inverting amp is shown in Figure 6. OPTIONAL OFFSET ADJ. +V R5 R4 R1 –V RF +V 1nF RFC –14 NE5539 10 8 73 +1 1nF R3 75 470 R6 VOUT 75Ω TERM 75 VIN R2 1nF RFC 75 1nF —V R1 = 75Ω 5% CARBON R2 = 75Ω 5% CARBON R3 = 75Ω 5% CARBON R4 = 36K 5% CARBON R5 = 20k TRIMPOT (CERMET) RF = 1.5k (28dB GAIN) R6 = 470Ω 5% CARBON RFC 3T # 26 BUSS WIRE ON FERROXCUBE VK 200 09/3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.) Top Plane Copper1 (Component Side) Component Side (Component Layout) Bottom Plane Copper1 —V X R2 R5 R4 X R1 +V X RFC (1) VIN X X X X XR 6 X X XX RF CC RFC R5 SL00575 Figure 6. 28dB Non-Inverting Amp Sample PC Layout 1992 Apr 15 7 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 NE5539 COLOR VIDEO AMPLIFIER The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 7 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 8, 9 and 10). As can be seen in Figure 9, the gain varies less than 0.5% from the bottom to the top of the staircase. The maximum differential phase shown in Figure 10 is approximately +0.1°. The amplifier circuit was optimized for a 75Ω input and output termionation impedance with a gain of approximately 10 (20dB). NOTE: 1. The input signal was 200mV and the output 2V. VCC was ±8V. 750 75 —V 22nF — 14 10 8 VIN + 75 —V 22nF —V 1 7 47