Bluetooth Power Amplifier IC Preliminary Information

www.DataSheet4U.com SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Applications Bluetoothtm wireless technology (Class 1) USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the SE2425U is designed for 2.4 GHz wireless applications, including BluetoothTM Class 1 basic rate and enhanced data rate applications. It delivers +25 dBm output power in standard rate GFSK mode and +19.5 dBm output power in enhanced rate 8DPSK. The SE2425U provides a digital mode control input for boosting the linear performance for enhanced data rate applications. The SE2425U operates at 3.3 V DC with a peak efficiency of 43 % in basic rate and 21 % in enhanced rate mode. The internal bias management allows the part to only draw 28 mA in Class 2 output power levels. Output match integrates the high Q inductors to reduce component count and bill of materials. It uses two external capacitors to allow for varying loads, such as switches and filters, in different applications. The silicon/silicon-germanium structure of the SE2425U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Features Integrated input and inter-stage match +25 dBm GFSK Output Power +19.5 dBm 8DPSK Output Power Low current: 110 mA typical @ POUT = +20 dBm Ultra low quiescent current: 28 mA Digital Enable for direct interface to standard CMOS processors Mode-control for easy switching between standard and EDR modes Gain: 29 dB 3.3 V single supply operation Ordering Information Type SE2425U SE2425U-R SE2425U-EK1 Package 3 x 3 x 0.5 mm QFN 3 x 3 x 0.5 mm QFN N/A Remark Sample Tape & Reel Evaluation Kit Functional Block Diagram EN (4) MODE (5) VCC0 (2) VCC1 ( 16 ) VCC2 ( 15 ) VCC3 ( 14 ) Digital Bias & Enable Logic RF IN (1) Input Match InterStage Match InterStage Match RF OUT (7) SiGe SE2425U GND ( Paddle ) Figure 1: SE2425U Block Diagram 165-DST-01 Rev 1.3 Apr-05-2006 Confidential QA040506 1 of 10 SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Pin-Out Diagram SE2425U Top View VCC1 VCC2 VCC3 14 N/C 13 12 11 10 GND Pad EN 4 5 6 7 8 9 N/C 16 1 2 3 15 RFIN VCC0 N/C N/C N/C CAP N/C MODE Figure 2: SE2425U Pin-Out Pin Out Description Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND Pad Name RFIN VCCO N/C EN MODE N/C RFOUT N/C N/C CAP N/C N/C N/C VCC3 VCC2 VCC1 GND Description Power amplifier RF input, DC blocking is required Bias Power Supply Do Not Connect PA Enable Mode switch Do Not Connect RF output Note: Requires external DC blocking and optional shunt capacitor (typically 0p75 0402) Do Not Connect Do Not Connect Matching capacitor (typically 1p3 0402) Do Not Connect Do Not Connect Do Not Connect Stage 3 collector supply voltage Stage 2 collector supply voltage Stage 1 collector supply voltage Heat slug Ground Pad 165-DST-01 Rev 1.3 Apr-05-2006 Confidential QA040506 RFOUT N/C 2 of 10 SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Absolute Maximum Ratings Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC VEN IN TC TSTG Tj Supply Voltage Enable Voltage RF Input Power Parameter Min. -0.3 -0.3 -40 -40 - Max. +4.2 VCC 0 +85 +150 +150 Unit V V dBm °C °C °C Case Temperature Range Storage Temperature Range Maximum Junction Temperature DC Electrical Characteristics Conditions: Symbol VCC Supply Voltage Supply Current VMODE = Low, POUT = 20 dBm ICC Supply Current VMODE = Low, No RF Supply Current VMODE = High, No RF Supply Current VMODE = High, POUT = 19.5 dBm IEN IMODE VLOGIC Istdby Current sunk by EN pin (logic high) Current sunk by MODE pin (logic high) Logic High Voltage Logic Low Voltage Leakage Current when VEN = VMODE = 0 V, No RF VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, TC = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board unless otherwise noted. Parameter Min. 2.7 2.0 0 Typ. 3.3 110 28 81 123 2.8 1 Max. 3.6 1 1 3.3 0.8 10 Unit V mA mA mA mA µA µA V V µA 165-DST-01 Rev 1.3 Apr-05-2006 Confidential QA040506 3 of 10 SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information AC Electrical Characteristics Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, VMODE = Low, PIN = -6 dBm, TC = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted Standard Rate Mode Symbol fL-U POUT_MAX ∆Ptemp G GVAR 2f 3f IS11I IS21IOFF IS12I STAB Frequency Range Maximum Output Power (PIN = 0 dBm) Output Power variation over temperature (-40 °C < TA <+85 °C) Gain @ PIN = -25 dBm Gain @ PIN = -6 dBm Gain Variation over band (2400-2500 MHz) Harmonics Isolation in “OFF” State, VEN = 0 V Reverse Isolation Stability (PIN = -6 dBm, Load VSWR = 4:1) Parameter Min. 2400 10 Typ. 25 0.5 29.5 28.5 0.1 -40 -41 36 42 Max. 2500 1.0 Unit MHz dBm dB dB dB dBc dB dB dB All non-harmonically related outputs less than -50 dBc Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, VMODE = High, TC = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted. Enhanced Rate Mode Symbol POUT_MAX ∆Ptemp G GVAR ACPR1 Parameter Output Power (Meets ACPR1/2 specification) Output Power variation over temperature (-40 °C < TA < +85 °C) for PIN=-15 dBm Gain @ PIN = -25 dBm Gain Variation over band, PIN = -25 dBm 2 Mbps, π/4-DQPSK, FC ± 2 MHz, BW = 1 MHz 3 Mbps, 8DPSK, FC ± 2 MHz, BW = 1 MHz 2 Mbps, π/4-DQPSK, FC ± 3 MHz, BW = 1 MHz 3 Mbps, 8DPSK, FC ± 3 MHz, BW = 1 MHz Min. - Typ. 19.5 1.5 30.5 0.1 - Max. -20 -20 -40 -40 Unit dBm dB dB dB dBm dBm dBm dBm ACPR2 165-DST-01 Rev 1.3 Apr-05-2006 Confidential QA040506 4 of 10 SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Typical Performance Characteristics Low Mode Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, MODE = Low, TC = 25 °C, f = 2.45 GHz, as measured on SiGe’s SE2425U-EV1 evaluation board otherwise noted Output Power vs. Input Power (25 C, 3.3 V, 2.45 GHz, Low Mode) 25 0.25 Icc vs. Output Power (25C, 3.3 V, 2.45 GHz, Low Mode) 20 Output Power (dBm) 0.2 10 ICC (A) 15 0.15 0.1 5 0.05 0 -30 0 -25 -20 -15 Input Pow er (dBm ) -10 -5 0 0 5 10 15 20 25 Output Pow er (dBm ) Figure 3: Typical Performance Data in Low Mode (a) Output Power vs. Input Power, (b) Current vs. Output Power 2MBit ACPR 2MHz Offset over Output Power (25 C, 2.45 GHz, Low Mode) 2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz 2MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode) 2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 ACPR (dBm) -40 -42 -44 -46 -48 -50 -52 -54 -56 14 15 16 17 18 19 Output Pow er (dBm ) 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz Figure 4: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage 3MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode) 2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 20 21 Output Pow er (dBm ) 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz 3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode) 2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 ACPR (dBm) -40 -42 -44 -46 -48 -50 -52 -54 -56 14 15 16 17 18 19 Output Pow er (dBm ) 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz Figure 5: Typical 3 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage 165-DST-01 Rev 1.3 Apr-05-2006 Confidential QA040506 5 of 10 SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information High Mode Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, MODE = High, TC = 25 °C, f = 2.45 GHz, as measured on SiGe’s SE2425U-EV1 evaluation board otherwise noted Output Power vs. Input Power (25 C, 3.3 V, 2.45 GHz, High Mode) 25 0.23 0.21 20 Output Power (dBm) 0.19 0.17 15 ICC (A) 0.15 0.13 0.11 5 0.09 0.07 0 -30 0.05 -25 -20 -15 Input Pow er (dBm ) -10 -5 0 0 5 10 15 20 25 Output Pow er (dBm ) Icc vs. Output Power (25 C, 3.3 V, 2.45 GHz, High Mode) 10 Figure 6: Typical Performance Data in High Mode (a) Output Power vs. Input Power , (b) Current vs. Output Power 2MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode) 2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 -18 ACPR (dBm) -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz 3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode) 2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 -40 ACPR (dBm) -42 -44 -46 -48 -50 -52 -54 -56 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz Figure 7: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in High Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over Voltage 3MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode) 2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 ACPR (dBm) -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 20 21 Output Pow er (dBm ) 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz 3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode) 2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 16 17 18 19 Output