15A/ 400V - 600V Ultrafast Diodes

RURP1560 Data Sheet August 2004 15A, 400V - 600V Ultrafast Diode The RURP1560 is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as an energy steering/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09905. Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated • Planar Construction Applications • Switching Power Supply • Power Switching Circuits • General Purpose Ordering Information PART NUMBER RURP1560 PACKAGE TO-220AC BRAND RURP1560 Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number Symbol www.DataSheet4U.com K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURP1560 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 145oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 600 600 600 15 30 200 100 20 -55 to 175 ©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C RURP1560 Electrical Specifications TC = 25oC, Unless Otherwise Specified RURP1560 SYMBOL VF IF = 15A IF = 15A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs ta tb RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 15A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs TEST CONDITION MIN TYP 30 20 MAX 1.5 1.2 100 500 55 60 1.5 UNITS V V µA µA ns ns ns ns oC/W Typical Performance Curves 80 IR, REVERSE CURRENT (µA) 500 100 IF, FORWARD CURRENT (A) 175oC 10 10 175oC 1.0 100oC 100oC 25oC 0.1 0.01 25oC 1 0 0.5 1.0 VF, FORWARD VOLTAGE (V) 1.5 2.0 0.001 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE ©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C RURP1560 Typical Performance Curves 60 (Continued) IF(AV), AVERAGE FORWARD CURRENT (A) 16 14 DC 12 10 8 6 4 2 0 120 SQ. WAVE 50 40 t, TIME (ns) trr 30 ta 20 tb 10 0 1 IF, FORWARD CURRENT (A) 10 20 130 140 150 160 170 180 TC, CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD I V FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS ©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11