DIODE

www.DataSheet4U.com RSX501L-20 Diodes Schottky barrier diode RSX501L-20 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 5 5 7 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current Forward current s urge peak （ 60Hz・ 1cyc ） Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 25 20 5 70 125 -40 to +125 Unit V V A A ℃ ℃ (*1)Tc=90 ℃ m ax Mouinted on epoxy board. 180° Half s ine wave Electrical characteristics (Ta=25°C) Parameter Symbol Min. VF Forward voltage IR Reverse current Typ. - Max. 0.39 500 Unit V µA IF=3.0A VR=20V 5.3±0.1 　 0.05 9.5±0.1 Conditions 12±0.2 4.2 Rev.D 1/3 RSX501L-20 Diodes Electrical characteristic curves (Ta=25°C) 10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 10000 1000 100 Ta=-25℃ 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1050 1000 f=1MHz Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 100 0.01 0.001 10 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 380 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25℃ IF=5A n=30pcs 1000 900 800 700 600 500 400 300 200 100 AVE:196.8uA Ta=25℃ VR=20V n=30pcs 1040 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 1030 1020 1010 1000 990 980 970 960 950 AVE:997.4pF Ta=25℃ f=1MHz VR=0V n=10pcs 360 350 AVE:350.0mV 340 330 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISRESION MAP 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t AVE:186.0A Ifsm 1cyc 8.3ms 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc AVE:11.6ns 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 5 100 4 D=1/2 DC Sin(θ＝180) Rth(j-c) IM=100mA IF=1A 3 10 2 1 1ms time 1 300us 0.1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 8 10 Rev.D 2/3 RSX501L-20 Diodes 5 4 REVERSE POWER DISSIPATION:PR (W) 3 DC 2 1 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 15 0A 0V 10 T DC 5 Sin(θ＝180) Io t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=10V Tj=125℃ 15 0A 0V 10 DC T Io t VR D=t/T VR=10V Tj=125℃ D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=1/2 5 Sin(θ＝180) D=1/2 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 30 No break at 30kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.D 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1