WCDMA Band I Power Amplifier Module

PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module April 2007 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Features ■ 40% WCDMA efficiency at +28dBm Pout ■ 20% WCDMA efficiency (58mA total current) at ■ ■ ■ ■ tm General Description ■ ■ ■ The RMPA2266 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA +16dBm Pout applications. Answering the call for ultra-low DC power Low quiescent current (Iccq): 25mA in low-power consumption and extended battery life in portable mode electronics, the RMPA2266 uses novel proprietary Meets UMTS/WCDMA performance requirements circuitry to dramatically reduce amplifier current at low to Meets HSDPA performance requirements medium RF output power levels (< +16dBm), where the Single positive-supply operation with low power and handset most often operates. A simple two-state Vmode shutdown modes control is all that is needed to reduce operating current by more than 60% at 16dBm output power, and – 3.4V typical Vcc operation quiescent current (Iccq) by as much as 70% compared – Low Vref (2.85V) compatible with advanced handset to traditional power-saving methods. No additional chipsets circuitry, such as DC-to-DC converters, are required to Compact Lead-free compliant LCC package – achieve this remarkable improvement in amplifier (4.0 x 4.0 x 1.0mm nominal) efficiency. Further, the 4 x 4 x 1.0mm LCC package is Industry standard pinout pin-compatible and a drop-in replacement for last Internally matched to 50Ω and DC blocked RF generation 4 x 4mm PAMs widely used today, minimizing input/output the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic www.DataSheet4U.com Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN GND Vmode Vref 10 Vcc2 INPUT MATCH OUTPUT MATCH BIAS/MODE SWITCH 2 3 4 5 9 GND 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Absolute Ratings(1) Symbol Vcc1, Vcc2 Vref Vmode Pin Tstg Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Parameter Ratings 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm °C Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics(2) Symbol f Gp Po PAEd Itot WCDMA OPERATION Power Gain Linear Output Power PAEd (digital) @ 28dBm PAEd (digital) @ 16dBm High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ACLR1 ACLR2 ±5.00MHz Offset ±10.0MHz Offset Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V GENERAL CHARACTERISTICS VSWR Rx No 2fo 3fo–5fo S Tc Iccq Iref Icc(off) Input Impedance Receive Band Noise Power Harmonic Suppression Harmonic Suppression Spurious Outputs (3)(4) Parameter Operating Frequency Comments Min. 1920 Typ. Max. 1980 Units MHz dB dB dBm dBm 28 22 28 16 40 20 460 58 % % mA mA -40 -42 -52 -57 2.0:1 2.5:1 dBc dBc dBc dBc Po ≤ +28dBm, 2110 to 2170MHz Po ≤ +28dBm Po ≤ +28dBm Load VSWR ≤ 5.0:1 -30 Vmode ≥ 2.0V Po ≤ +28dBm No applied RF signal -136 -38 -55 -60 10:1 85 25 5 1 5 dBm/Hz dBc dBc dBc °C mA mA µA Ruggedness with Load Mismatch (4) No permanent damage Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current DC CHARACTERISTICS Notes: 2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 3. All phase angles. 4. Guaranteed by design. ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 2 PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Recommended Operating Conditions Symbol f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage Operating Shutdown Bias Control Voltage Low-Power High-Power Linear Output Power High-Power Low-Power Case Operating Temperature -30 Parameter Operating Frequency Min. 1920 3.0 2.7 0 1.8 0 Typ. 3.4 2.85 Max. 1980 4.2 3.1 0.5 3.0 0.5 +28 Units MHz V V V V V dBm dBm °C Vmode 2.0 Pout +16 +85 Tc DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 3 PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Evaluation Board Layout 1 5 3 6 6 5 2 2266 XYTT Z 4 7 5 Materials List Qty 1 2 5 Ref 3 3 2 1 1 A/R A/R Item No. 1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 Part Number G657553-1 V2 #142-0701-841 #2340-5211TN GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K SN63 SN96 PC Board Description SMA Connector Terminals Assembly, RMPA2266 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3µF Capacitor (1206) 0.1µF Capacitor (0603) 0.1µF Capacitor (0603) Solder Paste Solder Paste Vendor Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp. Evaluation Board Schematic 3.3 µF VCC1 SMA1 RF IN VMODE VREF 1000 pF 0.1 µF 50 Ohm TRL 4 5 11 (PACKAGE BASE) 1000 pF 1 2 10 1000 pF 3.3 µF VCC2 50 Ohm TRL SMA2 RF OUT 2266 XYTT 8 Z 3, 6, 7, 9 ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 4 PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Package Outline I/O 1 INDICATOR TOP VIEW 1 2 10 9 2266 XYTT (4.00mm +.100 ) SQUARE –.050 3 4 5 8 6 1.1mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm Signal Descriptions Pin # 1 2 3 4 5 6 7 8 9 10 11 Signal Name Vcc1 RF In GND Vmode Vref GND GND RF Out GND Vcc2 GND Description Supply Voltage to Input Stage RF Input Signal Ground High Power/Low Power Mode Control Reference Voltage Ground Ground RF Output Signal Ground Supply Voltage to Output Stage Paddle Ground ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D 5 Z T T XY 2 6 6 www.fairchildsemi.com 2 Z 7 PRELIMINARY RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Applications Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. • Assemble the devices within 7 days of removal from the dry pack. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure per JEDEC J-STD-020 must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliabl