1A/ 600V Hyperfast Diode

RHR1K160 Data Sheet January 2000 File Number 4789 1A, 600V Hyperfast Diode The RHR1K160 is a hyperfast diode with soft recovery characteristics (t rr < 25ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49185. Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <25ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V • Thermal Impedance SPICE Model • Thermal Impedance SABER™ Model • Avalanche Energy Rated • Planar Construction • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RHR1K160 PACKAGE MS-012AA BRAND RHR1K160 Applications • Switching Power Supplies • Power Switching Circuits • General Purpose NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e. RHR1K16096. Symbol NC (1) ANODE (2) ANODE (3) NC (4) CATHODE (8) CATHODE (7) CATHODE (6) CATHODE (5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TA = 65oC Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 11 and 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg RHR1K160 600 600 600 1 2 10 2.5 5 -55 to 150 300 260 UNITS V V V A A A W mJ oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 3-1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a Copyright of Analogy, Inc. RHR1K160 Electrical Specifications SYMBOL VF IF = 1A IF = 1A, TA = 150oC IR VR = 600V VR = 600V, TA = 150oC trr ta tb QRR CJ RθJA IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs VR = 10V, IF = 0A Pad Area = 0.769 in2 (Note 1) Pad Area = 0.054 in2 (Note 2) (Figure 13) Pad Area = 0.0115 in2 (Note 2) (Figure 13) DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 10), summation of ta + tb . ta = Time to reach peak reverse current (See Figure 10). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 10). Qrr = Reverse recovery charge. CJ = Junction Capacitance. RθJA = Thermal resistance junction to ambient. pw = Pulse width. D = Duty cycle. NOTES: 1. Measured using FR-4 copper board at 3.2 seconds. 2. Measured using FR-4 copper board at 1000 seconds. TA = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 10.5 5 20 10 MAX 2.1 1.7 100 500 25 50 177 217 UNITS V V µA µA ns ns ns nC pF oC/W oC/W oC/W 3-2 RHR1K160 Typical Performance Curves 10 IF, FORWARD CURRENT (A) IR, REVERSE CURRENT (µA) 10 150oC 1 100oC 0.1 100oC 150oC 1 25oC 0.01 25oC 0.1 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 20 TAA = 25C, dIF/dt = = 200A/ s T = 25o oC, dIF/dt 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 16 tr 12 ta 8 tb 4 35 30 TA = 100oC, dIF/dt = 200A/µs trr 25 20 15 10 5 ta tb 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 50 IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150oC, dIF/dt = 200A/µs 1.0 DC 0.8 SQ. WAVE 0.6 RθJA = 50oC/W t, RECOVERY TIMES (ns) 40 trr 30 tb 20 ta 0.4 10 0.2 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 3-3 RHR1K160 Typical Performance Curves 50 CJ , JUNCTION CAPACITANCE (pF) (Continued) 40 30 20 10 0 0 20 40 60 80 100 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 10 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 RθJA = 50oC/W THERMAL IMPEDANCE ZθJA, NORMALIZED 1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 10-3 10-2 10-1 100 101 102 103 SINGLE PULSE 0.01 10-5 10-4 t, RECTANGULAR PULSE DURATION (s) FIGURE 8. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT VGE t1 t2 - 0.25 IRM IRM FIGURE 9. trr TEST CIRCUIT FIGURE 10. trr WAVEFORMS AND DEFINITIONS 3-4 RHR1K160 Test Circuits and Waveforms L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) (Continued) L CURRENT SENSE Q1 R VAVL + VDD IL IL DUT VDD - IV t0 t1 t2 t FIGURE 11. AVALANCHE ENERGY TEST CIRCUIT FIGURE 12. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS Thermal Resistance vs Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. ( T JM – T A ) P DM = ---------------------------Z θJA (EQ. 1) junction temperature or power dissipation. Pulse applications can be evaluated using the Intersil device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. 350 RθJA = 101.6 - 25.82 x ln(AREA) JUNCTION TO AMBIENT (oC/W) RθJA, THERMAL IMPEDANCE 300 250 200 217oC/W - 0.0123in2 150 100 50 0.001 177oC/W - 0.054in2 In using surface mount devices such as the SO-8 package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of the PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Intersil provides thermal information to assist the designer’s preliminary application evaluation. Figure 13 defines the RθJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 2 oz. copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state 3-5 0.01 0.1 1.0 CATHODE MOUNTING AREA, TOP COPPER AREA (in2) FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD AREA Displayed on the curve are RθJA values listed in the Electrical Specifications table. These points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM. Thermal resistances corresponding to other component side copper areas can be obtained from Figure 13 or by calculation using Equation 2. The area, in square inches is the top copper area including the cathode pad area. R θJA = 101.6 – 25.82 × ln ( Area ) (EQ. 2) RHR1K160 The transient thermal impedance (ZθJA) is also effected by various top copper board areas. Figure 14 shows the effect of copper pad area on the single pulse transient thermal impedance. Each trace represents a copper pad area in square inches corresponding to the descending list in the graph. Spice and SABER thermal models are provided for each of the listed pad areas. Copper pad area has no perceivable effect on transient t