1A/ 600V Hyperfast Dual Diode

RHR1K160D Data Sheet January 2000 File Number 4788 1A, 600V Hyperfast Dual Diode Features [ /Title The RHR1K160D is a hyperfast dual diode with soft recovery • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <25ns (RHR1 characteristics (t rr < 25ns). It has about half the recovery • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC K160D time of ultrafast diodes and is silicon nitride passivated ion• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V implanted epitaxial planar construction. ) /Sub• Thermal Impedance SPICE® Model This device is intended for use as freewheeling/clamping ject diodes and rectifiers in a variety of switching power supplies • Thermal Impedance SABER© Model and other power switching applications. Its low stored charge (1A, • Avalanche Energy Rated and hyperfast soft recovery minimize ringing and electrical 600V • Planar Construction Hyper- noise in many power switching circuits reducing power loss in the switching transistors. • Related Literature fast Formerly developmental type TA49185. - TB334, “Guidelines for Soldering Surface Mount Dual Components to PC Boards” Diode) Ordering Information /Autho Applications PART NUMBER PACKAGE BRAND r () • Switching Power Supplies RHR1K160D MS-012AA RHR1K160D /Key• Power Switching Circuits NOTE: When ordering, use the entire part number. For ordering in words tape and reel, add the suffix 96 to the part number, i.e., (Inter- RHR1K160D96. • General Purpose sil Symbol Corpo- Packaging ration, JEDEC MS-012AA NC (1) CATHODE 1 (8) semiBRANDING DASH conANODE 1 (2) CATHODE 1 (7) ductor, 5 Ava1 ANODE 2 (3) CATHODE 2 (6) 2 lanche 3 4 Energy NC (4) CATHODE 2 (5) Rated, Switch ing Absolute Maximum Ratings (Per Leg) TA = 25oC, Unless Otherwise Specified Power RHR1K160D UNITS SupPeak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V plies, Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 600 V 600 V Power DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 1 A Switch TA = 65oC ing Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 2 A CirSquare Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 10 A cuits, Halfwave, 1 phase, 60Hz RectifiMaximum Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 2.5 W ers, Avalanche Energy (See Figures 11 and 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E 5 mJ AVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg -55 to 150 300 260 oC oC oC 1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER is a Copyright of Analogy, Inc. RHR1K160D Electrical Specifications SYMBOL VF IF = 1A IF = 1A, TA = 150oC IR VR = 600V VR = 600V, TA = 150oC trr ta tb QRR CJ RθJA IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs IF = 1A, dIF/dt = 200A/µs VR = 10V, IF = 0A Pad Area = 0.483 in2 (Note 1) Pad Area = 0.027 in2 (Note 2) (Figure 13) Pad Area = 0.006 in2 (Note 2) (Figure 13) DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 10), summation of ta + tb . ta = Time to reach peak reverse current (See Figure 10). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 10). Qrr = Reverse recovery charge. CJ = Junction Capacitance. RθJA = Thermal resistance junction to ambient. pw = Pulse width. D = Duty cycle. NOTES: 1. Measured using FR-4 copper board at 0.8 seconds. 2. 2. Measured using FR-4 copper board at 1000 seconds. (Per Leg) TA = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 10.5 5 20 10 MAX 2.1 1.7 100 500 25 50 201 239 UNITS V V µA µA ns ns ns nC pf oC/W oC/W oC/W Typical Performance Curve 10 IF, FORWARD CURRENT (A) IR, REVERSE CURRENT ( A) 10 150oC 1 100oC 0.1 100oC 150oC 1 25oC 0.01 25oC 0.1 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RHR1K160D Typical Performance Curve 20 TA = 25oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 16 t, RECOVERY TIMES (ns) (Continued) 35 30 TA = 100oC, dIF/dt = 200A/µs trr 25 20 15 10 5 trr 12 tb ta 8 tb 4 ta 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV), AVERAGE FORWARD CURRENT (A) 50 TA = 150oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 40 1.0 DC 0.8 SQ. WAVE 0.6 RθJA = 50oC/W trr 30 tb 20 0.4 10 ta 0.2 0 0.1 0.5 IF, FORWARD CURRENT (A) 1 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 50 CJ , JUNCTION CAPACITANCE (pF) 40 30 20 10 0 0 20 40 60 80 100 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 RHR1K160D Typical Performance Curve 10 (Continued) THERMAL IMPEDANCE ZθJA, NORMALIZED 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 RθJA = 50oC/W PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 10-3 10-1 100 10-2 t, RECTANGULAR PULSE DURATION (s) 101 102 103 SINGLE PULSE 0.01 10-5 10-4 FIGURE 8. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE + VDD IF 0 dIF dt ta trr tb IGBT VGE t1 t2 - 0.25 IRM IRM FIGURE 9. trr TEST CIRCUIT L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) FIGURE 10. trr WAVEFORMS AND DEFINITIONS L CURRENT SENSE Q1 R VAVL + VDD IL IL DUT VDD - IV t0 t1 t2 t FIGURE 11. AVALANCHE ENERGY TEST CIRCUIT FIGURE 12. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 RHR1K160D Thermal Resistance vs Mounting Pad Area JUNCTION TO AMBIENT (oC/W) RθJA, THERMAL IMPEDANCE 350 RθJA = 110.2 - 25.24 x ln (AREA) 300 250 200 150 100 Rθβ = 43.81 - 22.66 x ln (AREA) 50 0.001 0.01 AREA, TOP COPPER AREA (in2) 0.1 239oC/W - 0.006in2 201oC/W - 0.027in2 The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. ( T JM – T A ) P DM = ---------------------------Z θJA (EQ. 1) In using surface mount devices such as the SOP-8 package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Intersil provides thermal information to assist the designer’s preliminary application evaluation. Figure 13 defines the RθJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 2 oz. copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Intersil device SPICE thermal model or manually utilizing the normalized maximum transient thermal impedance curve. FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD AREA Displayed on the curve are RθJA values listed in the Electrical Specifications table. These points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM . Thermal resistances corresponding to other component side copper areas can be obtained from Figure 13 or by calculation using Equation 2. The area, in square inches is the top copper board area, the thermal resistance and ultimately the power dissipation, PDM . R θJA = 110.18 – 25.24 × ln ( Area ) (EQ. 2) While Equation 2 describes the thermal resistance of a single die, the dual die SOP-8 package introduces an additional thermal component, thermal coupling resistance, Rθβ. Equation 3 describes Rθβ as a function of the top copper mounting pad area. R θβ = 43.81 – 22.66 × ln ( Area ) (EQ. 3) The thermal coupling resistance vs. copper area is also graphically depicted in Figure 13. It is important to note the thermal resistance (RθJ