3V W-CDMA LINEAR PA MODULE

www.DataSheet4U.com RF3266 3V W-CDMA LINEAR PA MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3x3x0.9mm VCCBIAS VCC1 Features +28dBm Linear Output Power, ULRMC12.2 (26.5dBm, HSDPA) +28dB Linear Gain at +28dBm Digital Controlled HPM/LPM HSDPA Capable Low Quiescent Current (LPM <20mA) 21% Linear Efficiency@19dBm (LPM) RF IN 1 16 15 14 Interstage MN IM 13 12 VCC2 Q1 NC 2 IMN Q2 VCC2L 11 VCC2 OMN VMODE 3 Bias 10 VCC2 VREG 4 5 VDET Integrated Power Detector 9 RF OUT 8 NC 6 NC 7 NC Applications 3V W-CDMA Handsets Multi-Mode W-CDMA 3G Handsets Spread-Spectrum Systems PCMCIA Cards Functional Block Diagram Product Description The RF3266 is a high-power, high-efficiency, linear PA module designed for use as the final RF amplifier in 3V, 50Ω W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1920MHz to 1980MHz band. The RF3266 has a digital control pin which, when enabled, will allow the amplifier to operate up to 19dBm output power with reduced current consumption. In the Low Power Mode, the current consumption may be reduced by more than 50% that of a standard power amplifier. The RF3266 is fully HSDPA-capable and is assembled in a 16-pin, 3mmx3mm, QFN package. Ordering Information RF3266 RF3266PCBA-410 3V W-CDMA Linear PA Module Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 RF3266 Absolute Maximum Ratings Parameter Supply Voltages, VCC (No RF) Supply Voltage,VCC (with RF) PINMAX =5dBm, POUT =29dBm, VSWR=5:1 Supply Voltage, VCCBIAS Control Voltage, VMODE Control Voltage, VREG RF - Input Power RF - Output Power Operating Case Temperature Storage Temperature Rating 7.0 4.3 Unit V V Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). 7.0 3.5 3.5 +6 +30 -30 to +110 -40 to +150 V V V dBm dBm °C °C Parameter High Power Mode (VMODE Low) Operating Frequency Range Maximum Linear Output Maximum Linear Output (HSDPA) Power Gain Gain Delta versus Frequency ACLR1 @ ±5MHz ACLR1 @ ±5MHz, HSDPA ACLR2 @ ±10MHz ACLR2 @ ±10MHz, HSDPA EVM Linear Efficiency ICC (ICC, ICC_Bias) Input VSWR Harmonic Output (2fo) Harmonic Output (3fo) Min. Specification Typ. Max. Unit Condition TC =+25°C, VCC =3.4V, VMODE =0V, VREG =2.85V, Mod.=W-CDMA ULRMC 12.2, POUT =+28dBm, unless otherwise specified. 1920 28 26.5 25 0 28 0.5 -40 -40 -52 -52 1 36 2.5 40 463 2.1:1 1980 MHz dBm dBm HSDPA Modulation. See Condition A, Table 1. 32 1 -36 -36 -48 -48 4 515 -10 -25 dB dB dBc dBc dBc dBc % % mA dBm dBm f=2fo, RBW=1MHz f=3fo, RBW=1MHz POUT =+26.5dBm. See Condition A, Table 1. POUT =+26.5dBm. See Condition A, Table 1. 2 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 RF3266 Parameter High Power Mode (VMODE Low), cont’d Noise Power GPS GSM DCS W-CDMA -104 -110 -92 -95 dBm/30KHz -503.4V). As a reference, the following setup shall be used for HSDPA test with reduced output power. Parameter Output Power (POUT_MAX_1) for different ratio of βc to βd for all values of βhs Conditions A) 1/15<βc/βd <12/15 B) 13/15<βc/βd <15/8 C) 15/7<βc/βd <15/0 Level +26.5dBm +25.5dBm +24.5dBm Condition Table 2 A) Max Linear Output (POUTMAX_1) reduction at normal and high voltage (VCC >3.4V). As a reference, the following setup shall be used for HSDPA test with reduced output power. Parameter Output Power (POUT_MAX_1) for different ratio of βc to βd for all values of βhs Conditions A) 1/15<βc/βd <12/15 B) 13/15<βc/βd <15/8 C) 15/7<βc/βd <15/0 Level +18dBm +17dBm +16dBm Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 10 RF3266 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function RF IN NC VMODE VREG VDET NC NC NC RF OUT VCC2 VCC2 VCC2 VCC2L IM VCC1 VCCBIAS GND Description AC-coupled RF input internally matched to 50Ω. This pin must remain floating. Digital control voltage input for switching the PA from low power mode to high power mode and vice versa. A “low” on this pin operates the PA in the specified high power mode. A “high” on this pin operates the PA in the specified low power mode. Regulated voltage input required for operation of PA bias circuitry. This pin also functions as the PA enable/disable control. An external load resistor (RDET) is required on this pin. A lowpass filter of averaging functionality is also required to reduce voltage ripple (due to modulation) to an acceptable amount. An isolator is required on the PA output for proper operation of PDET when the PA operates into a non-50Ω load impedance. This pin must remain floating. This pin must remain floating. This pin must remain floating. AC-coupled RF output internally matched to 50Ω. Power supply input for th