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RF3166D
0
Typical Applications • 3V Dual-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Description
1
DUAL-BAND GSM900/DCS POWER AMP MODULE
• EGSM900/DCS Products • GPRS Class 12 • Power StarTM Module
1.40 1.25
0.000 TYP 0.565 TYP 1.150 TYP 2.000 TYP 2.850 5.057 5.100
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: Module, 6mm x6mm
Features • Ultra-Small 6mmx6mm Package Size • Integrated VREG • Complete Power Control Solution • Automatic VBATT Tracking Circuit • No External Components or Routing • Improved Power Flatness
DCS RFIN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 GND 5 VRAMP 6 GSM 7 RF IN
9
DCS RFOUT
Ordering Information
8 GSM RFOUT
RF3166D Dual-Band GSM900/DCS Power Amp Module RF3166D SB Power Amp Module 5-Piece Sample Pack RF3166DPCBA-410 Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Functional Block Diagram
Rev A2 061006
5.435 TYP 5.500 TYP 5.900 TYP
The RF3166 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifier in EGSM900 and DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands. The RF3166 incorporates RFMD’s latest VBATT tracking circuit, which monitors battery voltage and prevents the power control loop from reaching saturation. The VBATT tracking circuit eliminates the need to monitor battery voltage, thereby minimizing switching transients. The RF3166 requires no external routing or external components, simplifying layout and reducing board space.
6.00 ± 0.10
6.00 ± 0.10 Shaded areas represent pin 1.
0.450 ± 0.075
Dimensions in mm.
0.100 TYP 0.565 TYP 0.965 1.150 TYP 1.225 TYP 1.750 TYP
2.600 TYP 4.650
5.823 5.500 5.400 TYP 5.225 TYP 5.200 TYP 4.625 TYP 4.450 TYP 3.850 TYP 3.675 TYP 3.075 TYP 2.900 TYP 2.300 TYP 2.125 TYP 1.525 TYP 1.350 TYP 0.800 TYP 0.600 TYP 0.500 TYP 0.000
1
5.900 TYP 5.435 5.370 5.035 4.600 4.300 4.200 3.800 3.400 3.065 3.000 2.600 2.100 1.700 1.365 1.300 0.900 TYP 0.750 TYP 0.565 TYP 0.100 TYP
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RF3166D
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VRAMP) Input RF Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature
Rating
-0.3 to +6.0 -0.3 to +2.2 +10 50 10:1 -20 to +85 -55 to +150
Unit
VDC V dBm % °C °C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall Power Control VRAMP
Power Control “ON” Power Control “OFF” VRAMP Input Capacitance VRAMP Input Current TX Enable “ON” TX Enable “OFF” GSM Band Enable DCS/PCS Band Enable
Specification Min. Typ. Max.
Unit
Condition
2.1 0.26 2 1.5 0.5 0.5 1.5 3.5 3.0 4.5 4.5 5.5 1 150 20 30
V V pF μA V V V V V V V μA mA V V μA V V μA
Max. POUT, Voltage supplied to the input Min. POUT, Voltage supplied to the input DC to 2MHz VRAMP =2.1V
Overall Power Supply
Power Supply Voltage Specifications Nominal operating limits VRAMP <1.7V PIN <-30dBm, TX Enable=Low, Temp=-20°C to +85°C VRAMP =0.26V, TX Enable=High
Power Supply Current
Overall Control Signals
Band Select “Low” Band Select “High” Band Select “High” Current TX Enable “Low” TX Enable “High” TX Enable “High” Current 0 1.5 0 1.5 0 2.0 20 0 2.0 1 0.5 3.0 50 0.5 3.0 2
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RF3166D
Parameter Specification Min. Typ. Max. Unit Condition
Temp=+25 °C, VBATT =3.5V, VRAMP =2.1V, PIN =3dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154μs 880 to 915 33.7 46 0 MHz dBm % dBm dBm dBm dBm dBm dBm dBm dBm dBm Ω 2.5:1 8:1 Spurious<-36dBm, RBW=3MHz Set VRAMP where POUT <33.7dBm into 50Ω load Set VRAMP where POUT <33.7dBm into 50Ω load. No damage or permanent degradation to part. Load impedance presented at RF OUT pad VRAMP =0.26V to 2.1V VRAMP =VRAMP_RP Temp=-20°C to +85°C, VBATT >3.0V. Ramping shape same as for Condition: Temp=25°C, VBATT =3.5V, VRAMP =VRAMP_RP Temp=+25°C, VBATT =3.5V, VRAMP =2.1V At POUT MAX, VBATT =3.5V Maximum output power guaranteed at minimum drive level RBW=100kHz, 925MHz to 935MHz, POUT < +33.7dBm RBW=100kHz, 935MHz to 960MHz, POUT < +33.7dBm TXEnable=Low, PIN =+5dBm TXEnable=High, PIN =+5dBm, VRAMP =0.26V VRAMP =0.26V to VRAMP_RP VRAMP =0.26V to VRAMP_RP VRAMP =0.26V to VRAMP_RP VRAMP =0.26V to 2.1V
Overall (GSM900 Mode)
Operating Frequency Range Maximum Output Power 1 Total Efficiency Input Power Range Output Noise Power
+3 -83 -85
+5 -80 -83 -30 -10 -20 -10 -15 -36
Forward Isolation 1 Forward Isolation 2 Cross Band Isolation 2f0 Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability
-40 -30 -30 -15 -30
50
Output Load VSWR Ruggedness
10:1
Output Load Impedance
50 50 55 -35 -23
Ω dB dBm dBm
Power Control VRAMP
Power Control Range Transient Spectrum Transient Spectrum Under Extreme Conditions
Notes: VRAMP_RP =VRAMP set for 33.7dBm at nominal conditions.
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RF3166D
Parameter Specification Min. Typ. Max. Unit Condition
Temp=25°C, VBATT =3.5V, VRAMP =2.1V, PIN =3dBm, Freq=1710MHz to 1785MHz, 25% Duty Cycle, pulse width=1154μs 1710 to 1785 31.5 44 0 MHz dBm % dBm dBm dBm dBm dBm dBm dBm Ω 2.5:1 8:1 Spurious<-36dBm, RBW=3MHz Set VRAMP where POUT <31.5dBm into 50Ω load Set VRAMP where POUT <31.5dBm into 50Ω load. No damage or permanent degradation to part. Load impedance presented at RF OUT pad VRAMP =0.26V to 2.1V VRAMP =VRAMP_RP Temp=-20°C to +85°C, VBATT >3.0V. Ramping shape same as for Condition: Temp=25°C, VBATT =3.5V, VRAMP =VRAMP_RP Temp=+25°C, VBATT =3.5V, VRAMP =2.1V At POUT MAX, VBATT =3.5V Maximum output power guaranteed at minimum drive level RBW=100kHz, 1805MHz to 1880MHz, POUT < 31.5dBm TXEnable=Low, PIN =+5dBm TXEnable=High, VRAMP =0.26V, PIN =+5dBm VRAMP =0.26V to VRAMP_RP VRAMP =0.26V to VRAMP_RP VRAMP =0.26V to 2.1V
Overall (DCS Mode)
Operating Frequency Range Maximum Output Power 1 Total Efficiency Input Power Range Output Noise Power Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability
+3 -85 -40 -25 -15 -30
+5 -80 -30 -10 -7 -15 -36
50
Output Load VSWR Ruggedness
10:1
Output Load Impedance
50 45 50 -35 -23
Ω dB dBm dBm
Power Control VRAMP
Power Control Range Transient Spectrum Transient Spectrum Under Extreme Conditions
Notes: VRAMP_RP =VRAMP set for 31.5dBm at nominal conditions.
2-494
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RF3166D
Pin 1 2 Function DCS IN BAND SELECT Description
RF input to the DCS band. This is a 50Ω input. Allows external control to select the GSM or DCS band with a logic high or low. A logic low enables the GSM band whereas a logic high enables the DCS band.
BAND SEL TX EN DCS CTRL GSMCTRL
Interface Schematic
3
TX ENABLE
This signal enables the PA module for operation with a logic high.
VBATT
TX EN
TX ON
4 5 6
VBATT GND VRAMP
Power supply for the module. This should be connected to the battery.
Ramping signal from DAC. A 300kHz lowpass filter is integrated into the CMOS. No external filtering is required.
VRAMP
30 0 kH z
7 8 9 Pkg Base
GSM IN GSM OUT DCS/PCS OUT GND
RF input to the GSM band. This is a 50Ω input. RF output for the GSM band. This is a 50Ω output. The output load line matching is contained internal to the package. RF output for the DCS band. This is a 50Ω output. The output load line matching is contained internal to the package.
Rev A2 061006
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RF3166D
Pin Out
Top Down View
DCS RFIN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 GND 5 VRAMP 6 GSM 7 RF IN 8 GSM RFOUT 9 DCS RFOUT
2-496
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RF3166D
Application Schematic
50 Ω μstrip DCS IN BAND SELECT TX ENABLE VBATT 1 2 3 4 5 VRAMP GSM IN 50 Ω μstrip 6 7 8 50 Ω μstrip GSM OUT 9 50 Ω μstrip DCS OUT
Evaluation Board Schematic
P1 1 GND P2-1 CON1 50 Ω μstrip DCS IN 1 BAND SELECT TX ENABLE 2 3 VBATT 22 μF* VRAMP 50 Ω μstrip GSM IN 4 5 6 7 8 50 Ω μstrip GSM OUT 9 50 Ω μstrip DCS OUT P2 1 VCC CON1
Notes: * The value of VBATT decoupling capacitor depends on the noise level of the phone board. Capacitor type may be either tantalum or ceramic. Some applications may not require this capacitor. 1. All the PA output measurements are referenced to the PA output pad (pins 8 and 9). 2. The 50 Ω μstrip between the PA output pad and the SMA connector has an approximate insertion loss of 0.1 dB for EGSM900 and 0.2 dB for DCS1800 bands.
Rev A2 061006
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RF3166D
Evaluation Board Layout Board Size 2.0” x 2.0”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer
2-498
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RF3166D
Theory of Operation
Overview The RF3166 is a dual-band EGSM900 and DCS1800 power amplifier module that incorporates an indirect closed loop method of power control. This simplifies the phone design by eliminating the need for the complicated control loop design. The indirect closed loop appears as an open loop to the user and can be driven directly from the DAC output in the baseband circuit. Theory of Operation The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power control systems in GSM sense either forward power or collector/drain current. The RF3166 does not use a power detector. A high-speed control loop is incorporated to regulate the collector voltage of th
