QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

www.DataSheet4U.com RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (6mmx6mm) HB RFIN 1 18 HB RFOUT BAND SEL 2 Features High Gain for use in Systems with Low RF Driver Power Linear EDGE and GSM Operation PowerStar® GSM/GPRS Power Control Digital Band Select Enables GSM850, EGSM900 or DCS, PCS Amplifier Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Digital Bias Control for Simple Implementation of Low Power Mode Compact 6mmx6mm Package TX EN 3 Integrated Power Control VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 8 VBIAS 12 LB RFOUT Functional Block Diagram Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 6mmx6mm laminate module with a protective plastic overmold. Ordering Information RF3159Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Applications Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 Compatible Products Mobile EDGE/GPRS Data Products RF3159 RF3159PCBA-41X Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS070102 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 26 RF3159 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VRAMP) Band Select TX Enable VBIAS VMODE RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 3.0 3.0 3.0 3.0 12.0 50 10:1 -20 to +85 -55 to +150 Unit V V V V V V dBm % °C °C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Caution! ESD sensitive device. Parameter VRAMP Power Control Power Control Range VRAMP Input Current Min. 0.30 Specification Typ. Max. 2.2 40 Unit Condition V uA VRAMP =VRAMP,MAX VBIAS VBIAS “High” VBIAS “Low” VBIAS Input Current -10 1.5 0.7 +10 V V μA For low output power levels VMODE Switch VMODE “HIGH” VMODE “LOW” VMODE Input Current 1.5 0 -10 1.5 0 -10 1.5 0 -10 3.2 3.0 Off Current 3.6 0.7 +10 4.5 5.5 10 0.7 +10 0.7 +10 V V uA V V uA V V uA V V uA Performance specified Functional with performance degraded TX_EN low PA “ON” PA “OFF” 8PSK Mode GMSK Mode Band Switch BAND_SEL “HIGH” BAND_SEL “LOW” BAND_SEL Input Current High Band (DCS/PCS) Low Band (GSM850/GSM900) TX_EN Switch TX_EN “HIGH” TX_EN “LOW” TX_EN Input Current Overall Power Supply VCC Range 2 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070102 RF3159 Parameter RF Impedance LB_RF IN LB_RF OUT HB_RF IN HB_RF OUT 50 50 50 50 Ω Ω Ω Ω Nominal Conditions (unless otherwise stated): Input and Output=50Ω, Temp=25 °C, VCC =3.6V, VMODE =“Low”, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154μs, PIN =-2dBm, BAND_SEL=“Low”, TX_EN=“High”, VRAMP =VRAMP,MAX 824 -2 34.2 32.0 47 +1 35.0 33.5 53 -84 -80 849 +4 MHz dBm dBm dBm % dBm RBW=100kHz, 869MHz to 894MHz, f0 =849MHz, over PIN range, POUT