QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE



Part  Number RF3158
Manufacturer RF Micro Devices
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www.DataSheet4U.com RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (6mmx6mm) HB RFIN 1 18 HB RFOUT Features Linear EDGE and GSM Operation PowerStar® GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Analog Bias Control allows External Optimization of EDGE Current Compact 6mmx6mm Package BAND SEL 2 TX EN 3 VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 12 LB RFOUT Integrated Power Control Functional Block Diagram Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 6mmx6mm laminate module with a protective plastic overmold. Ordering Information RF3158 Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board Applications Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 Compatible Products Mobile EDGE/GPRS Data Products RF3158PCBA-41X Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A2 DS070615 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 26 RF3158 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VRAMP) Band Select TX Enable VMODE RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 3.0 3.0 3.0 12.0 50 10:1 -20 to +85 -55 to +150 Unit V V V V V dBm % °C °C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Caution! ESD sensitive device. Parameter VRAMP Power Control (GMSK Mode) Power Control Range VRAMP Input Current Min. Specification Typ. Max. Unit Condition 0.30 2.10 40 V uA VRAMP =VRAMP,MAX VRAMP Bias Control (8PSK Mode) High Bias Mode Low Bias Mode VRAMP Input Current 2.1 0.4 2.15 0.6 2.0 40 V V uA High Bias Mode Low Bias Mode VRAMP =VRAMP,MAX 8PSK Mode GMSK Mode VMODE Switch VMODE “HIGH” VMODE “LOW” VMODE Input Current 1.5 0 -10 1.5 0 -10 1.5 0 -10 3.2 3.0 Off Current 3.6 0.7 10 4.5 4.8 10 0.7 10 0.7 10 V V uA V V uA V V uA V V uA Performance specified Functional with performance degraded TX_EN low PA “ON” PA “OFF” High Band (DCS/PCS) Low Band (GSM850/GSM900) Band Switch BAND_SEL “HIGH” BAND_SEL “LOW” BAND_SEL Input Current TX_EN Switch TX_EN “HIGH” TX_EN “LOW” TX_EN Input Current Overall Power Supply VCC Range 2 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A2 DS070615 RF3158 Parameter RF Impedance LB_RF IN LB_RF OUT HB_RF IN HB_RF OUT 50 50 50 50 Ω Ω Ω Ω Nominal Conditions (unless otherwise stated): Input and Output=50Ω, Temp=25 °C, VCC =3.6V, VMODE =“Low”, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154μs, Over Pin Range, BAND_SEL=“Low”, TX_EN=“High” 824 +1.0 34.5 32.5 -10 Power Droop Power Control Slope -0.25 300 200 60 Total Efficiency (PAE) Output Noise Power Forward Isolation 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 47 50 -87 -82 -25 -7 -10 0 -18 -36 2.5:1 0.25 +4.0 35.0 849 +6.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm dBm dBm Temp=25 °C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=85 °C, VCC =3.2V, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <34.5dBm, 50% Duty Cycle, Pulse Width=2308μs Maximum Slope, POUT =0dBm to 5dBm Maximum Slope, POUT =5dBm to 15dBm Maximum Slope, POUT >15dBm VRAMP =VRAMP,MAX RBW=100kHz, 869MHz to 894MHz, f0 =849MHz, POUT <+34.5dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <34.5dBm POUT <34.5dBm Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. POUT <34.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+4dBm, set VRAMP where POUT <34.5dBm into 50Ω load Set VRAMP where POUT <34.5dBm into 50Ω load, no damage or permanent degradation to part. Min. Specification Typ. Max. Unit Condition Cellular 850MHz Band GMSK Mode Operating Frequency Range Input Power Range, PIN Maximum Output Power Output Load VSWR Ruggedness 10:1 Note: VRAMP,MAX =2.1V Rev A2 DS070615 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 26 RF3158 Parameter Min. Specification Typ. Max. Unit Condition Nominal Conditions (unless otherwise stated): Input and Output=50Ω, Temp=25 °C, VCC =3.6V, VRAMP =2.1V, VMODE =”High”, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154μs, BAND_SEL=“Low”, TX_EN=“High” 824 28.5 29 849 MHz dBm High Bias mode (VRAMP =2.1V) Cellular 850MHz Band 8PSK Mode Operating Frequency Range Maximum Output Power Meeting EVM and ACPR Spectrum 26.5 13.5 Low Power Current Consumption Total Efficiency (PAE) 17 350 20 2.0 Gain Gain Temperature Coefficient EVM RMS 28.0 30.0 -0.037 -0.025 3.5 5.0 ACPR and Spectrum Mask ACPR and Spectrum Mask, Extreme Conditions -57 -63 -57 -63 Output Noise Power 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -82 -80 -7 -10 0 -18 -36 2.5:1 32.0 575 dBm dBm mA % % dB dB/K dB/K % % dBc dBc dBc dBc dBm dBm dBm dBm dBm dBm Temp=-20°C to +85°C, VCC =3.2V, High Bias mode (VRAMP =2.1V) Temp=-20°C to +85°C, VCC =3.2V, Low Bias mode (VRAMP =0.6V) POUT <13.5dBm, Low Bias mode (VRAMP =0.6V) POUT =28.5dBm, High Bias mode (VRAMP =2.1V) POUT =13.5dBm, Low Bias mode (VRAMP =0.6V) Temp=+25°C to +85°C, VCC =3.6V Temp=-20°C to +25°C, VCC =3.6V POUT <28.5dBm POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20°C to +85°C At 400kHz in 30kHz BW, POUT <28.5dBm At 600kHz in 30kHz BW, POUT <28.5dBm At 400kHz in 30kHz RBW, POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20°C to +85°C. At 600kHz in 30kHz RBW, POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20°C to +85°C. RBW=100kHz, 869MHz to 894MHz, f0 =849MHz, POUT <+28.5dBm POUT <28.5dBm POUT <28.5dBm Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. POUT <28.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, set PIN where POUT <28.5dBm into 50Ω load. 4 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A2 DS070615 RF3158 Parameter Min. Specification Typ. Max. Unit Condition Nominal Conditions (unless otherwise stated): Input and Output=50Ω, Temp=25 °C, VCC =3.6V, VMODE =”Low”, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154μs, Over Pin Range, BAND_SEL=“Low”, TX_EN=“High” 880 +1.0 34.5 32.5 -10 Power Droop Power Control Slope -0.25 300 200 60 Total Efficiency (PAE) Output Noise Power 47 50 -83 -87 Forward Isolation 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -80 -83 -25 -7 -10 0 -18 -36 2.5:1 0.25 +4.0 35 915 +6.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm dBm dBm dBm Temp=25°C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=+85oC, VCC =3.2V, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <34.5dBm, 50% Duty Cycle, Pulse Width=2308μs Maximum Slope, POUT =0dBm to 5dBm Maximum Slope, POUT =5dBm to 15dBm Maximum Slope, POUT >15dBm VRAMP =VRAMP,MAX RBW=100kHz, 925MHz to 935MHz, f0 =915MHz, POUT <+34.5dBm RBW=100kHz, 935MHz to 960MHz, f0 =915MHz, POUT <+34.5dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <34.5dBm POUT <34.5dBm Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. POUT <34.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+4dBm, set VRAMP where POUT <34.5dBm into 50Ω load Set VRAMP where POUT <34.5dBm into 50Ω load, no damage or permanent degradation to part. EGSM 900MHz Band GMSK Mode Operating Frequency Range Input Power Range, PIN Maximu



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