RF3145 (RF Micro Devices) - QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE (RF3145.pdf)

RF Micro Devices

Description
www.DataSheet4U.com RF3145 0 Typical Applications • 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GSM850 and GSM900 Products Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS handheld cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands. Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band. The device is packaged on ultra-small LCC, minimizing the required board space. RoHS Compliant & Pb-Free Product QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE • EDGE and GPRS Class 12 Compatible • DCS/PCS Products 1 1.70 1.45 10.00±0.10 0.450±0.075 10.00±0.10 1.275 7.227 7.325 7.500 TYP 8.275 8.300 TYP 9.204 9.242 9.646 1 9.600 TYP 8.800 TYP 8.200 TYP 7.400 TYP 6.800 TYP 6.000 TYP 5.475 4.525 4.000 TYP 3.200 TYP 2.600 TYP 1.800 TYP 1.200 TYP 0.400 TYP 0.000 0.000 0.400 TYP 1.200 TYP 1.797 TYP 2.600 TYP 3.200 TYP 4.000 TYP 4.600 TYP 5.400 TYP 6.000 TYP 6.800 TYP 7.330 8.280 8.800 TYP 9.600 TYP 8.725 6.155 6.100 5.925 5.400 TYP 4.600 TYP 4.075 3.955 1.275 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Module (10mmx10mm) Features • Integrated Power Control & Band Select • Single 3.0V to 4.8V Supply Voltage NC • +35.0dBm GSM Output Pwr at 3.5V • +33dBm DCS/PCS Output Pwr at 3.5V 11 DCS OUT 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VMODE 5 VRAMP 6 GSM IN 7 8 NC 9 GSM OUT 10 NC • +29dBm 8PSK Output Pwr • 53% GSM and 50% DCS/PCS PAE Ordering Information RF3145 Quad-Band GSM/EDGE/GSM850/DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack RF3145PCBA-41XFully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev A4 050919 2-519 RF3145 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VRAMP) Band Select TX Enable RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.3 to +6.0 -0.3 to +1.8 3.0 3.0 12.0 50 10:1 -30 to +90 -55 to +150 Unit V V V V dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition Temp=+25 °C, VCC =3.5V, BandSel=Low, VMODE =Low, VRAMP =VRAMP,MAX, PIN =+4dBm Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154μs, TX EN=High GSM US 850MHz Band Operating Frequency Range Maximum Output Power 824 +34.5 849 +35.4 +32.5 0 MHz dBm dBm dBm % % dBm dB Temp = 25°C, VCC =3.5V, VRAMP =VRAMP,MAX Temp=+85oC, VBATT =3.0V, VRAMP =VRAMP,MAX VRAMP =0.2V At POUT,MAX, VCC =3.5V At POUT =31.5dBm F0 =849MHz, other signal 829MHz at 40dBm, measured at 869MHz in 100kHz RBW (Max Power) RBW=100kHz, 869MHz to 894MHz, POUT >+5dBm TX_ENABLE=0V, VRAMP =0.2, PIN =+6dBm Over all power levels Over all power levels Measured at DCS/PCS port. Over all power levels. Over all power levels Spurious<-36dBm, VRAMP =0.2V to 1.6V, RBW=3MHz Total Efficiency (PAE) Input Power for Max Output Folding Conversion Gain 45 +2 51 35 +4 -5 +6 Output Noise Power Forward Isolation Second Harmonic Third Harmonic All other Non-Harmonic Spurious Cross Band Coupling 2F0 Input Impedance Input VSWR Output Load VSWR Output Load Ruggedness Output Load Impedance Note: VRAMP,MAX =3/8*VBATT +0.18<1.6V -86 -84 -25 -5 -7 -36 -20 dBm dBm dBm dBm dBm dBm Ω -30 50 2.5:1 6:1 10:1 50 Ω Load impedance presented at RF OUT pad 2-520 Rev A4 050919 RF3145 Parameter Power Control VRAMP, GSM850 GMSK Mode Power Control “ON” Power Control “OFF” Power Control Range VRAMP Input Capacitance VRAMP Input Current Turn On/Off Time 0.2 33 15 10 4 1.6 0.25 V V dB pF μA μS Max POUT, Voltage supplied to the input Minimum POUT, Voltage supplied to the input. VRAMP =0.2V to 1.6V DC to 2MHz VRAMP =1.6V VRAMP =0V to 1.6V Temp=+25 °C, VCC =3.5V, BandSelect=Low, VMODE =High, VRAMP =VRAMP,MAX, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154μs Specification Min. Typ. Max. Unit Condition GSM US 850MHz Band 8PSK Mode Operating Frequency Range Output Power to Meet EVM and ACPR Spectrum Total Efficiency (PAE) Gain Gain Temperature Coefficient EVM RMS 824 +28.5 +26.5 28.0 25 30.0 28.5 -0.03 2.0 31.5 849 +29.0 MHz dBm dBm % dB dB db/° % % dBc dBc dBc dBm dBm dBm dBm dBm Ω Temp=-20°C to +85°C, VCC =3.2V At POUT,MAX, VCC =3.5V Temp=-20°C to +85°C Temp=-20°C to +85°C, VCC =3.2V to 4.8V POUT <28.5dBm POUT <26.5dBm, VCC =3.2V to 4.8V, <2.5:1VSWR, All angles At 200kHz in 30kHz BW, POUT <28.5dBm At 400kHz in 30kHz BW, POUT <28.5dBm At 600kHz to 1800kHz in 30kHz BW, POUT <28.5dBm RBW=100kHz, 869MHz to 894MHz, POUT >+5dBm TX Enable=0V, VRAMP = 0.2V, PIN =+6dBm Over all power levels Over all power levels 3.5 5.0 -34 -56 -63 -84 -30 -7 -7 -36 2.5:1 ACPR and Spectrum Mask -36 -60 Output Noise Power Forward Isolation Second Harmonic Third Harmonic All other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Output Load Ruggedness Output Load Impedance -85 -40 50 6:1 10:1 50 Over all power levels Spurious<-36dBm, VRAMP =0.2V to 1.6V, RBW=3MHz Ω Load impedance presented at RF OUT pad Rev A4 050919 2-521 RF3145 Parameter Specification Min. Typ. Max. Unit Condition Temp=+25 °C, VCC =3.5V, BandSelect=Low, VMODE =Low, VRAMP =VRAMP,MAX, PIN =+4dBm Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154μs, TX EN=High 880 +34.5 915 +35.0 +32.5 0 Total Efficiency (PAE) Input Power for Max Output Folding Conversion Gain 45 +2 55 35 +4 MHz dBm dBm dBm % % dBm dB Temp = 25°C, VCC =3.5V, VRAMP =VRAMP,MAX Temp=+85oC, VBATT =3.0V, VRAMP =VRAMP,MAX VRAMP =0.2V At POUT,MAX, VCC =3.5V At POUT =31.5dBm F0 =915MHz, other signal 895MHz at -40dBm, measured at 935MHz in 100kHz RBW (Max Power) RBW=100kHz, 925MHz to 935MHz, POUT >+5dBm RBW=100kHz, 935MHz to 960MHz, POUT >+5dBm TX_ENABLE=0V, VRAMP =0.2, PIN =+6dBm Over all power levels Over all power levels Measured at DCS/PCS port. Over all power levels. Over all power levels Spurious<-36dBm, VRAMP =0.2V to 1.6V, RBW=3MHz Ω Load impedance presented at RF OUT pad GSM US 900MHz Band Operating Frequency Range Maximum Output Power +6 -5 Output Noise Power -82 -86 -80 -84 -25 -5 -7 -36 -20 dBm dBm dBm dBm dBm dBm dBm Ω Forward Isolation Second Harmonic Third Harmonic All other Non-Harmonic Spurious Cross Band Coupling 2F0 Input Impedance Input VSWR Output Load VSWR Output Load Ruggedness Output Load Impedance Note: VRAMP,MAX =3/8*VBATT +0.18<1.6V 50 2.5:1 6:1 10:1 50 Power Control VRAMP, GSM900 GMSK Mode Power Control “ON” Power Control “OFF” Power Control Range VRAMP Input Capacitance VRAMP Input Current Turn On/Off Time 0.2 33 15 10 4 1.6 0.25 V V dB pF μA μS Max POUT, Voltage supplied to the input Minimum POUT, Voltage supplied to the input. VRAMP =0.2V to 1.6V DC to 2MHz VRAMP =1.6V VRAMP =0V to 1.6V 2-522 Rev A4 050919 RF3145 Parameter Specification Min. Typ. Max. Unit Condition Temp=+25 °C, VCC =3.5V, BandSelect=Low, VMODE =High, VRAMP =VRAMP,MAX, PIN =+4dBm Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154μs 880 +28.5 +26.5 Total Efficiency (PAE) Gain Gain Temperature Coefficient EVM RMS 28.0 25 29.5 28.0 -0.03 2.0 31.0 915 +29.0 MHz dBm dBm % dB dB db/° % % dBc dBc dBc dBm dBm dBm dBm dBm Ω Temp=-20°C to +85°C, VCC =3.2V At POUT,MAX, VCC =3.5V Temp=-20°C to +85°C Temp=-20°C to +85°C, VCC =3.2V to 4.8V POUT <28.5dBm POUT <26.5dBm, VCC =3.2V to 4.8V, <2.5:1VSWR, All angles At 200kHz in 30kHz BW, POUT <28.5dBm At 400kHz in 30kHz BW, POUT <28.5dBm At 600kHz to 1800kHz in 30kHz BW, POUT <28.5dBm RBW=100kHz, 935MHz to 960MHz, POUT >+5dBm TX Enable=0V, VRAMP = 0.2V, PIN =+6dBm Over all power levels Over all power levels GSM 900MHz Band 8PSK Mode Operating Frequency Range Output Power to Meet EVM and ACPR Spectrum 3.5 5.0 -34 -56 -63 -84 -25 -7 -7 -36 ACPR and Spectrum Mask -36 -60 Output Noise Power Forward Isolation Second Harmonic Third Harmonic All other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Output Load Ruggedness Output Load Impedance -85 50 2.5:1 6:1 10:1 50 Over all power levels Spurious<-36dBm, VRAMP =0.2V to 1.6V, RBW=3MHz Ω Load impedance presented at RF OUT pad Rev A4 050919 2-523 RF3145 Parameter Overall (DCS/PCS Mode) GMSK Mode Operating Frequency Range Maximum Output Power 1710 +32 31.5 1910 +33 32.5 30 49 45 +4 -5 MHz dBm dBm dBm % % dBm dB Specification Min. Typ. Max. Unit Condition Temp=+25 °C, VCC =3.5V, PIN =+4dBm BandSelect=High, VRAMP =VRAMP,MAX, Freq=1710MHz to 1910MHz, 25% Duty Cycle, Pulse Width=1154μs Temp=+25 °C, VCC =3.5V, VRAMP =1.6V, 1710MHz to 1785MHz 1850MHz to 1910MHz Temp=+85oC, VBATT =3.0V, VRAMP =VRAMP_MAX At POUT,MAX, VCC =3.5V, 1710MHz1785MHz 1850MHz-1910MHz Total Efficiency (PAE) 43 Recommended Input Power Range Folding Conversion Gain +2 +6 Output Noise Power (DCS) Output Noise Power (PCS) Forward Isolation Second Harmonic Third Harmonic All other Non-Harmonic Spurious Cross Band Coupling 2F0 Input Impedance Input VSWR Output Load VSWR Output Load Ruggedness Output Load Impedance -80 -80 -37 -77 -77 -30 -7 -7 -36 -30 2.5:

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