Schottky barrier diode

RB215T-60 Diodes Schottky barrier diode RB215T-60 Applications Switching power supply External dimensions (Unit : mm) 4.5±0.3 　　　 0.1 Structure 8.0±0.2 12.0±0.2 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 13.5MIN ① Construction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 5.0±0.2 0.7±0.1 0.05 8.0 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 Electrical characteristic (Ta=25°C) Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 20 100 150 -40 to +150 Unit V V A A ℃ ℃ Symbol VF Forward characteristics IR Reverse characteristics Thermal impedance θjc Parameter Min. - Typ. - Max. 0.58 600 1.75 Unit V µA ℃/W Conditions IF=10A VR=60V junction to case Rev.A 1/3 RB215T-60 Diodes Electrical characteristic curves 10 Ta=150℃ 1000000 Ta=150℃ Ta=125℃ 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 Ta=125℃ 1 Ta=75℃ Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 1000 1000 Ta=75℃ Ta=25℃ 100 100 10 1 Ta=-25℃ 0.1 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 50 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 60 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 540 1000 2000 Ta=25℃ Ta=25℃ VR=30V VR=60V n=30pcs n=30pcs Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 800 700 600 500 400 300 200 100 AVE:8.172uA AVE:140.7uA σ:1.9469uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 530 REVERSE CURRENT:IR(uA) Ta=25℃ IF=10A n=30pcs 900 1900 520 1800 510 AVE:515.0mV 500 1700 1600 AVE:1704.1pF 1500 490 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 25 20 15 10 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 10 AVE:166.0A AVE:23.3ns 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 Ifsm 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IF=5A IM=100mA time 30 PEAK SURGE FORWARD CURRENT:IFSM(A) t 10 FORWARD POWER DISSIPATION:Pf(W) 300us 1ms Rth(j-a) D=1/2 20 Sin(θ＝180) DC 100 1 Rth(j-c) 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.1 10 1000 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 40 TIME:t(s) Rth-t CHARACTERISTICS Rev.A 2/3 RB215T-60 Diodes 15 50 50 0A 0V DC Io t T VR D=t/T VR=30V Tj=150℃ 40 DC 30 D=1/2 20 10 Sin(θ＝180) 0 0 25 50 75 100 125 150 0 25 50 0A 0V Io t T VR D=t/T VR=30V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 D=1/2 DC Sin(θ＝180) 5 30 D=1/2 20 10 Sin(θ＝180) 0 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 REVERSE POWER DISSIPATION:PR (W) 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV 25 20 15 AVE:7.50kV 10 5 0 ELECTROSTATIC DISCHARGE TEST ESD(KV) C=200pF R=0Ω ESD DISPERSION MAP C=100pF R=1.5kΩ Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1