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QSZ3
Transistors
General purpose transistor (isolated transistor and diode)
QSZ3
A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package.
Applications DC / DC converter Motor driver
External dimensions (Unit : mm)
QSZ3
2.8 1.6
Features 1) Low VCE(sat) 2) Small package
0.16
(3)
(4)
0.3∼0.6
Structure Silicon epitaxial planar transistor
ROHM : TSMT5
Abbreviated symbol : Z03
Equivalent circuit
(5) (4)
Tr1
Tr2
(1)
(2)
(3)
Packaging specifications
Type QSZ3 TSMT5 Z03 TR 3000
Package Marking Code Basic ordering unit(pieces)
0∼0.1
Each lead has same dimensions
0.85
0.7
0.95 0.95 1.9 2.9
0.4
(2)
(1)
(5)
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QSZ3
Transistors
Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg Limits −15 −12 −6 −3 −6 500 1.25 0.9 150 −55 to +150 Unit V V V A ∗1 A mW/Total ∗2 W/Total ∗3 W/Element ∗3 °C °C
∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 25×25× t 0.8mm ceramic substrate.
Tr 2
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current Power dissipation Junction temperature Range of storage temperature
Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg
Limits 15 12 6 3 6 500 1.25 0.9 150 −50 to +150
Unit V V V A ∗1 A mW/Total ∗2 W/Total ∗3 W/Element ∗3 °C °C
∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 25×25× t 0.8mm ceramic substrate.
Electrical characteristics (Ta=25°C) Tr1
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗ Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. −15 −12 −6 − − − 270 − −
Typ. − − − − − −120 − 280 30
Max. − − − −100 −100 −250 680 − −
Unit V V V nA nA mV − MHz pF
Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −15V VEB= −6V IC= −1.5A, IB= −30mA VCE= −2V, IC= −500mA∗ VCE= −2V, IE=500mA, f=100MHz∗ VCB= −10V, IE=0A, f=1MHz
Tr 2
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗ Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 15 12 6 − − − 270 − −
Typ. − − − − − 120 − 360 30
Max. − − − 100 100 250 680 − −
Unit V V V nA nA mV − MHz pF
Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=1.5A, IB=30mA VCE=2V, IC=500mA ∗ VCE=2V, IE= −500mA, f=100MHz∗ VCB=10V, IE=0A, f=1MHz
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QSZ3
Transistors
Electrical characteristic curves Tr1(PNP)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
125˚C 25˚C
− 40˚C
125˚C
0.1
25˚C
BASE SATURATION VOLTAGE : VBE(sat) (V)
1000
1
10
DC CURRENT GAIN : hFE
100
1
25˚C − 40˚C
− 40˚C
0.01
125˚C
VCE=−2V Pulsed 10 0.001 0.01
0.1
1
10
IC/IB=20/1 Pulsed 0.001 0.001 0.01
IC/IB=20/1
0.1 Pulsed 0.001 0.01 0.1 1 10
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig1. DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Fig.3 Base−emitter saturation voltage vs.collector current
10
1000
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
TRANSITION FREQUENCY : fr (MHz)
COLLECTOR CURRENT : IC (A)
Ta=25°C VCE=2V f=100MHz
1000
Cib
IC=0A f=1MHz Ta=25°C
1
25˚C
0.1
Cob
100
100
0.01
125˚C
− 40˚C
IC/IB=20/1
0.001 Pulsed 0.1 1 10
10 0.01
0.1
1
10
10 0.001
0.01
0.1
1
10
100
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.4 Grounded emitter propagation charactereistics
Fig.5 Gain bandwidth product vs. emitter current
Fig 6. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base volatage
Tr2(NPN)
1000
Ta=100 C
BASE SATURATION VOLTAGE : VBE(sat) (V)
10
COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V)
VCE=−2V Pulsed
IC/IB=20/1 VCE=2V Pulsed
10
Ta=25 C
Ta=25 C Pulsed
DC CURRENT GAIN : hFE
Ta=25 C
Ta=40 C
1
Ta=−45 C
100
1
IC/IB=50/1
Ta=100 C
IC/IB=10/1 IC/IB=20/1
0.1
10 0.001
0.01
0.1
1
10
0.01 0.001
0.01
0.1
1
10
0.1 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.7 DC current gain vs. collector current
Fig.8 Collector-emitter saturation voltage vs. collector current
Fig.9 Base-emitter saturation voltage vs.collector current
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QSZ3
Transistors
10
TRANSITION FREQUENCY : fT (MHz)
Ta=100 C
Ta=25 C
1
COLLECTOR TO EMITTER SATURATION VOLTAGE : VBE(sat) (V)
COLLECTOR CURRENT :IC (A)
IC/IB=20/1 Pulsed
1000
1000
Ta=25 C VCE=−2V f= 100MHz
IC=0A f=1MHz Ta=25 C
Cib
Ta=−45 C
0.1
100
100
Cob
0.01
0.001
0.1
1
10
10 0.01
0.1
1
10
10 0.001
0.01
0.1
1
10
100
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.10 Grounded emitter propagation characteristics
Fig.11 Gain bandwidth product vs. emitter current
Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
