UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP TRANSISTOR
DESCRIPTION
The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.
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2
3
FEATURES
* High Collector-Emitter voltage: VCEO=-300V(UTC PZTA92) VCEO=-200V(UTC PZTA93) *Collector Power Dissipation: Pc(max)=1000mW
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
PARAMETER
Collector-Base Voltage UTC PZTA92 UTC PZTA93 Collector-Emitter Voltage UTC PZTA92 UTC PZTA93 Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature
SYMBOL www.DataSheet4U.com
VCBO
VALUE
-300 -200
UNIT
V
V VCEO VEBO Pc Ic Tj TSTG -300 -200 -5 1000 -500 150 -55 ~ +150
V mW mA °C °C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R207-006,B
UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage UTC PZTA92 UTC PZTA93 Collector-Emitter Breakdown Voltage UTC PZTA92 UTC PZTA93 Emitter-Base Breakdown Voltage Collector Cut-Off Current UTC PZTA92 UTC PZTA93 Emitter Cut-Off Current DC Current Gain(note)
SYMBOL
BVCBO
TEST CONDITIONS
Ic=-100µA,IE=0
MIN
-300 -200
TYP
MAX UNIT
V
BVCEO
Ic=-1mA,IB=0 -300 -200 -5 -0.25 -0.25 -0.10 60 80 80 -0.5 -0.90 50 V V MHz V V µA µA
BVEBO ICBO
IE=-100µA,Ic=0 VCB=-200V,IE=0 VCB=-160V,IE=0 VEB=-3V,Ic=0 VCE=-10V,Ic=-1mA VCE=-10V,Ic=-10mA VCE=-10V,Ic=-30mA Ic=-20mA,IB=-2mA Ic=-20mA,IB=-2mA VCE=-20V,Ic=-10mA, f=100MHz VCB=-20V,IE=0 f=1MHz
IEBO hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product
VCE(sat)1 VBE(sat)1 fT
Collector Base Capacitance Ccb UTC PZTA92 UTC PZTA93 Note:Pulse test:PW<300µs,Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN)
6 8
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R207-006,B
UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
3 10 4 -10
Fig.2 Saturation Voltage
2 10
Fig.3 Capacitance
Ic=10*IB VCE(sat),VBE(sat) (mV) VCE=-10V DC current Gain,H FE
2 10
VCE(sat)
VBE(sat)
CIB(pF),CCB(pF)
3 -10
CIB
1 10
1 10
2 -10
CCB
0 10
0 -10
1 -10
2 -10
3 -10
4 -10
1 -10 0 -10
1 -10
2 -10
3 -10
4 -10
-1 -10
0 -10
1 -10
2 -10
Collector current, Ic(mA)
Collector current, Ic(mA)
Collector-Base voltage(V)
Fig.4 Active-region safe operating area
3 -10
s 0.1m
Fig.5 Current Gain Bandwidth product
3 10
1 .0
D
Collector current, Ic(mA)
Current gain bandwidth product(MHz)
C al m °C er 25 Th c= T 5W n 1. atio it lim
ms
2 -10
MPSA93
VCE=-20V f=100MHz
2 10
1 -10 625mW Thermal limitation Ta=25°C bonding breakdown limitation Tj=150°C 1 -10 0 -10 1 -10
MPSA92
2 -10
3 -10
1 10 0 -10
1 -10
2 -10
Collector-Emitter voltage ( v)
Collector current, Ic(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R207-006,B
