UTC PZTA14
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc (max) = 1000 mW
1
2
3
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature
(Ta=25°C)
SYMBOL
www.DataSheet4U.com VCBO
VALUE
30 30 10 1000 500 150 -55 ~ +150
UNIT
V V V mW mA °C °C
VCES VEBO Pc Ic Tj TSTG
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product Pulse test: Pulse Width<300µs, Duty Cycle=2%
SYMBOL
BVCES ICBO IEBO hFE VCE(sat) VBE(on) fT
TEST CONDITIONS
Ic=100µA,IB=0 VCB=30V,IE=0 VEB=10V,Ic=0 VCE=5V,Ic=100mA Ic=100mA,IB=0.1mA VCE=5V,Ic=100mA VCE=5V,Ic=10mA, f=100MHz
MIN
30
MAX
100 100
UNIT
V nA nA V V MHz
20000 1.5 2.0 125
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R207-004,B
UTC PZTA14
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R207-004,B
