NPN Silicon Planar Epitaxial Transistor

PZT5551 NPN Silicon Planar Epitaxial Transistor BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 160 180 6 600 1.5 150 -55 to +150 Unit V V V mA W ˚C ˚C www.DataSheet4U.com Device Marking PZT5551=5551 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC =1mA,IB=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 160 180 6 - Typ - Max 50 50 Unit V V V nA nA Collector-Base Breakdown Voltage (IC =100µA,IE=0) (IE =10 µA,IC=0) Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current (VCB =120V,IE=0) Emitter-Base Cutoff Current (VEB=4V,IC=0) WEITRON http://www.weitron.com.tw 1/4 05-Jul-05 PZT5551 ON CHARACTERISTICS Characteristics DC Current Gain (VCE = 5V, I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA) Symbol hFE1 hFE2 hFE3 VCE(sat) Min 80 80 50 - Typ 160 - Max 400 0.15 0.2 1 Unit - Collector-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) V V V Base-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) VBE(sat) DYNAMIC CHARACTERISTICS Current-Gain (VCE = 10V, IC = 10mA, f = 100MHz) fT Cob 100 - - 300 6 MHz pF Output Capacitance (VCB = 10V, IE = 0, f = 1MHz) CLASSIFICATION OF hFE2 Rank Range A 80 - 200 N 100 - 250 C 160 - 400 WEITRON http://www.weitron.com.tw 2 /4 05-Jul-05 PZT5551 Characteristics Curve 1000 100000 125˚C VCE(sat) @IC=10 IB Saturation Voltage (mA) 25˚C 100 75˚C 10000 hFE 1000 10 hFE@VCE = 5V 75˚C 100 125˚C 25˚C 1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Fig.1 Current Gain & Collector Current 1000 Collector Current (mA) Fig.2 Saturation Voltage & Collector Current 100 Saturation Voltage (mV) 25˚C 125˚C 75˚C Capacitance (pF) 10 VBE(sat) @ IC=10IB Cob 100 0.1 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current-IC (mA) Fig.3 Saturation Voltage & Collector Current 1000 Reverse Biased Voltage(V) Fig.4 Capacitance & Reverse-Biased Voltage 10000 Collector Current-IC (mA) Cutoff Frequency (MHz) PT=1ms 1000 PT=100ms PT=1s 100 100 10 VCE=10V 1 1 10 100 1 1 10 100 1000 Fig.5 Cutoff Frequency & Collector Current WEITRON http://www.weitron.com.tw Collector Current (mA) Fig.6 Safe Operation Area 05-Jul-05 Forward Voltage-VCE(V) 3/4 PZT5551 SOT-223 Outline Dimensions unit:mm A F DIM MILLIMETERS MIN MAX 4 S 1 2 3 B D L G C H M K J A B C D F G H J K L M S 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 4 /4 05-Jul-05