HIGH VOLTAGE SWITCHING TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *High Collector-Emitter Voltage: VCEO=-150V *High current gain APPLICATIONS *Telephone Switching Circuit *Amplifier 1 SOT-223 *Pb-free plating product number:PZT5401L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating PZT5401-AA3-R PZT5401L-AA3-R Package SOT-223 Packing Tape & Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD. 1 of 4 QW-R207-013,A PZT5401 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Power Dissipation Operating Junction Temperature Storage Temperature PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25 , unless otherwise specified) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 2 +150 -40 ~ +150 UNIT V V V mA W ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VBE=-3V, Ic=0 VCE=-5V, Ic=-1mA VCE=-5V, Ic=-10mA VCE=-5V, Ic=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, Ic=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V RS=1kΩ, f=10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 -1 -1 400 6.0 8 V V MHz pF dB 100 Note: Pulse test: PW<300µs, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 B 150-240 C 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R207-013,A PZT5401 TYPICAL CHARACTERICS PNP EPITAXIAL SILICON TRANSISTOR Fig.1 Collector output Capacitance 10 3 10 Fig.2 DC current Gain Cob,Capacitance (pF) VCE=-5V f=1MHz IE=0 hFE, DC current Gain 2 8 2 10 6 4 1 10 2 0 0 -10 1 -10 -10 0 10 -1 -10 -10 0 1 -10 -10 2 -10 3 Collector-Base voltage (V) Ic,Collector current (mA) Fig.3 Base-Emitter on Voltage -10 3 1 -10 Fig.4 Saturation voltage Ic=10*IB Ic,Collector current (mA) VCE=-5V -10 2 Saturation voltage (V) -10 0 VBE(sat) -10 1 -1 -10 VCE(sat) -2 -10 -10 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 0 -10 1 -10 -10 2 3 -10 Base-Emitter voltage (V) Ic,Collector current (mA) Current Gain-bandwidth product, fT (MHz) Fig.5 Current gain-bandwidth product 10 3 VCE=-10V 2 10 1 10 10 0 0 -10 1 -10 -10 2 3 -10 Ic,Collector current (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R207-013,A PZT5401 PNP EPITAXIAL SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-013,A