Silicon Junction Field-Effect Transistor

F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) gfs Ciss Ciss eN ¯ td(on) tr td(off) tf 75 15 18 4.5 8 5 10 6 5 Ω mS pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) –5 1 Min 30 Typ 40 0.5 1 – 60 8 Max Unit V nA mA V PJ99 Process Test Conditions IG = 1 µA, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = – 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = ØV, VGS = 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = – 10V, VGS = ØV VDD = – 10V, ID(ON) = – 15 mA RL = 580 Ω, VGS(ON) = ØV VGS(OFF) = 12V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-31 PJ99 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.4 V Gfs as a Function of VGS(OFF) 25 Transconductance in mS – 25 VGS = Ø V Drain Current in µA – 20 VGS = 0.5 V – 15 VGS = 1.0 V – 10 VGS = 1.5 V –5 VGS = 2.0 V 0 –5 – 10 – 15 – 20 20 15 10 0 2 4 6 8 10 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Ω Drain Saturation Current in mA – 80 125 IDSS as a Function of RDS – 60 100 – 40 75 – 20 50 25 0 – 20 – 40 – 60 – 80 – 100 Drain Saturation Current in mA 0 2 4 6 8 10 Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 24 Feedback Capacitance in pF VDS = Ø V Input Capacitance in pF 12 Feedback Capacitance as a Function of VGS VDS = Ø V 8 16 VDS = – 10 V 8 4 VDS = – 10 V 0.1 1 Gate Source Voltage in Volts 10 20 0.1 1 Gate Source Voltage in Volts 10 20