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Hitachi
Hitachi

PF08109B Datasheet

MOS FET Power Amplifier Module


PF08109B Datasheet Preview


PF08109B
MOS FET Power Amplifier Module
for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-821B (Z)
3rd Edition
Mar. 2000
Application
Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz)
For 3.5 V nominal battery use
Features
2 in / 2 out dual band amplifire
Simple external circuit including output matching circuit
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ
High efficiency : 50% Typ at nominal output power for E-GSM
43% Typ at 32.7 dBm for DCS1800
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
Vdd 8
V
Supply current
Vtxlo voltage
Idd GSM
Idd DCS
Vtxlo
3
2
4
A
A
V
Vapc voltage
Vapc
4
V
Input power
Pin 10
dBm
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–30 to +100
°C
Output power
Pout GSM
5
W
Pout DCS
3
W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz),
and the DCS1800-band (1710 to 1785 MHz).
Page 1

PF08109B
Electrical Characteristics for DC (Tc = 25°C)
Item
Drain cutoff current
Vapc control current
Vtxlo control current
Symbol
Ids
Iapc
Itxlo
Min Typ Max Unit Test Condition
— — 100 µA Vdd = 8 V, Vapc = 0 V
——3
mA Vapc =2.2 V
— — 100 µA Vtxlo = 2.4 V
Electrical Characteristics for E-GSM mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 , Tc = 25°C, Vapc DCS = 0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Frequency range
Total efficiency (Hi)
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Total efficiency (Lo)
Output power (1)(Hi)
Output power (1)(Lo)
Output power (2)(Hi)
Symbol
Min Typ Max
f
880 —
915
ηT(Hi)
2nd H.D.
41
50 —
–45 –38
3rd H.D.
–45 –40
VSWR (in) —
1.5 3
ηT(Lo)
27 35 —
Pout (1)(Hi) 35.5 36.0 —
Pout (1)(Lo) 30.8 31.3 —
Pout (2)(Hi) 33.5 34.0 —
Output power (2)(Lo)
Pout (2)(Lo) 28.8 29.3 —
Isolation
Isolation at DCS RF-output
when GSM is active
Switching time
Stability
tr, tf
— –42 –36
— –23 –17
—1
2
No parasitic oscillation
Load VSWR tolerance
No degradation
Unit
MHz
%
dBc
dBc
%
dBm
dBm
dBm
dBm
dBm
dBm
µs
Test Condition
Pout GSM = 35.5dBm, Vtxlo = 0.1V,
Vapc GSM = controlled
Pout GSM = 30.8dBm, Vtxlo = 2.4V,
Vapc GSM = controlled
Vapc GSM = 2.2V, Vtxlo = 0.1V
Vapc GSM = 2.2V, Vtxlo = 2.4V
Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 0.1V
Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 2.4V
Vapc GSM = 0.2V, Vtxlo = 0.1V
Pout GSM = 35.5dBm, Vtxlo = 0.1V
Measured at f = 1760 to 1830MHz
Pout GSM = 0 to 35.5dBm, Vtxlo = 0.1V
Vdd GSM = 3.0 to 5.1V,
Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM 2.2V, GSMpulse. Rg = 50,
Output VSWR = 6 : 1 All phases
Vdd GSM = 3.0 to 5.1V, t = 20sec.,
Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM 2.2V, GSM pulse. Rg = 50,
Output VSWR = 10 : 1 All phases
2
Page 2

PF08109B
Electrical Characteristics for DCS1800 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 , Tc = 25°C, Vapc GSM =0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Frequency range
Total efficiency (Hi)
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Total efficiency (Lo)
Output power (1)
Output power (2)
Symbol
f
ηT(Hi)
2nd H.D.
3rd H.D.
VSWR (in)
ηT(Lo)
Pout (1)
Pout (2)
Isolation
Isolation at GSM RF-output
when DCS is active
Switching time
Stability
tr, tf
Load VSWR tolerance
Min
1710
36
17
Typ
43
–45
–45
1.5
25
Max
1785
–38
–40
3
32.7 33.2 —
30.7 31.2 —
— –42 –36
— –10 0
—1
2
No parasitic oscillation
No degradation
Unit
MHz
%
dBc
dBc
%
dBm
dBm
dBm
dBm
µs
Test Condition
Pout DCS = 32.7dBm,
Vapc DCS = controlled
Pout DCS = 26.7dBm,
Vapc DCS = controlled
Vapc DCS = 2.2V,
Vdd DCS = 3.0V, Vapc DCS = 2.2V,
Tc = +85°C
Vapc DCS = 0.2V
Pout DCS = 32.7dBm,
Measured at f = 1710 to 1785MHz
Pout DCS = 0 to 32.7dBm
Vdd DCS = 3.0 to 5.1V,
Pout DCS 32.7dBm, Vapc DCS 2.2V,
DCS pulse. Rg = 50,
Output VSWR = 6 : 1 All phases
Vdd DCS = 3.0 to 5.1V,
Pout DCS 32.7dBm, t = 20sec.,
Vapc DCS 2.2V, DCS pulse. Rg = 50Ω,
Output VSWR = 10 : 1 All phases
3
Page 3

PF08109B
Package Dimensions
8G 7
9
10
G
11
12
1G 2
(Upper side)
6
5
G
4
3
(1.4)
13.75 ± 0.3
13.75 ± 0.3
(3.3) (3.3)
(1.0) (3.4) (1.0)
(1.4)
(0.8)
(0.8)
(1.45)
(1.1) (3.7)
(3.7)
(2.5) (2.5)
(Bottom side)
(1.2)
1.8 ± 0.2
Unit: mm
8G 7
6 5G4
3
9
10
G
11
12
1G2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
RF-O-12
4
Page 4
Part Number PF08109B
Manufactur Hitachi
Description MOS FET Power Amplifier Module
Total Page 5 Pages
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