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STMicroelectronics
STMicroelectronics

P7NK80ZFP Datasheet

STP7NK80ZFP


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STB7NK80Z, STB7NK80Z-1
STP7NK80ZFP, STP7NK80Z
N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
800V
800V
800V
800V
RDS(on)
< 1.8
< 1.8
< 1.8
< 1.8
ID
5.2A
5.2A
5.2A
5.2A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Applications
Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
STB7NK80ZT4
STB7NK80Z-1
STP7NK80Z
STP7NK80ZFP
B7NK80Z
B7NK80Z
P7NK80Z
P7NK80ZFP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape e reel
Tube
March 2010
Doc ID 8979 Rev 6
1/17
www.st.com
17
Page 1

Contents
Contents
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 8979 Rev 6
Page 2

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 D2PAK I2PAK TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VESD(G-S)
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC= 25 °C)
Tj Max operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 5.2 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
800
± 30
5.2
3.3
20.8
125
1
4000
4.5
5.2 (1)
3.3 (1)
20.8(1)
30
0.24
V
V
A
A
A
W
W/°C
V
V/ns
2500
V
-55 to 150
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 D2PAK I2PAK TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
1
62.5
300
4.2 °C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
5.2
210
Unit
A
mJ
Doc ID 8979 Rev 6
3/17
Page 3
Part Number P7NK80ZFP
Manufactur STMicroelectronics
Description STP7NK80ZFP
Total Page 17 Pages
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