600 Watt Peak Power Zener Transient Voltage Suppressors

P6SMB6.8AT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: http://onsemi.com PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.8−171 VOLTS 600 WATT PEAK POWER • • • • • • • • • Working Peak Reverse Voltage Range − 5.8 to 171 V Standard Zener Breakdown Voltage Range − 6.8 to 200 V Peak Power − 600 W @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B for Isolated Loop Circuit Protection www.DataSheet4U.com Response Time is Typically < 1 ns Pb−Free Packages are Available Cathode Anode SMB CASE 403A PLASTIC MARKING DIAGRAM AYWW xx G G A Y WW xx G = Assembly Location = Year = Work Week = Device Code (Refer to page 3) = Pb−Free Package Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Please See the Table on the Following Page *Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices. (Note: Microdot may be in either location) ORDERING INFORMATION Device P6SMBxxxAT3 P6SMBxxxAT3G Package SMB SMB (Pb−Free) Shipping † 2500/Tape & Reel 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 8 Publication Order Number: P6SMB6.8AT3/D P6SMB6.8AT3 Series MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient Forward Surge Current (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 600 3.0 40 25 0.55 4.4 226 100 −65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W A °C RqJL PD RqJA IFSM TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive 2. 1″ square copper pad, FR−4 board 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 30 A) (Note 5) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I Uni−Directional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty cycle http://onsemi.com 2 P6SMB6.8AT3 Series ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VRWM (Note 6) V 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 94 102 111 128 136 145 154 IR @ VRWM mA 1000 500 200 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown Voltage VBR V (Note 7) Min 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 105 114 124 143 152 162 171 Nom 6.8 7.51 8.2 9.1 10 11.05 12 13.05 15.05 16 18 20 22 24 27.05 30 33.05 36 39.05 43.05 47.05 51.05 56 62 68 75.05 82 91 100 110.5 120 130.5 150.5 160 170 180 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21 23.1 25.2 28.4 31.5 34.7 37.8 41 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 @ IT mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VC @ IPP (Note 8) VC V 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77 85 92 103 113 125 137 152 165 179 207 219 234 246 IPP A 57 53 50 45 41 38 36 33 28 27 24 22 20 18 16 14.4 13.2 12 11.2 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 4.0 3.6 3.3 2.9 2.7 2.6 2.4 QVBR %/°C 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.09 0.092 0.094 0.096 0.097 0.098 0.099 0.1 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 Ctyp (Note 9) pF 2380 2180 2015 1835 1690 1550 1435 1335 1175 1110 1000 910 835 775 700 635 585 540 500 460 425 395 365 335 305 280 260 235 215 200 185 170 150 140 135 130 Device P6SMB6.8AT3, G P6SMB7.5AT3, G P6SMB8.2AT3, G P6SMB9.1AT3, G P6SMB10AT3, G P6SMB11AT3, G P6SMB12AT3, G P6SMB13AT3, G P6SMB15AT3, G P6SMB16AT3, G P6SMB18AT3, G P6SMB20AT3, G P6SMB22AT3,G P6SMB24AT3, G P6SMB27AT3, G P6SMB30AT3, G P6SMB33AT3, G P6SMB36AT3, G P6SMB39AT3, G P6SMB43AT3, G P6SMB47AT3, G P6SMB51AT3, G P6SMB56AT3, G P6SMB62AT3, G P6SMB68AT3, G P6SMB75AT3, G P6SMB82AT3, G P6SMB91AT3, G P6SMB100AT3, G P6SMB110AT3, G P6SMB120AT3, G P6SMB130AT3, G P6SMB150AT3, G P6SMB160AT3, G P6SMB170AT3, G P6SMB180AT3, G Device Marking 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A P6SMB200AT3, G 200A 171 5 190 200 210 1 274 2.2 0.108 115 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 2 and derate per Figure 3. 9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 P6SMB6.8AT3 Series 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 10 tr ≤ 10 ms 100 VALUE (%) PEAK VALUE − IPP I HALF VALUE − PP 2 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. PP, PEAK POWER (kW) 1 50 tP 0.1 0.1 ms 1 ms 10 ms 100 ms 1 ms 10 ms 0 0 1 2 t, TIME (ms) 3 4 5 tP, PULSE WIDTH Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform 160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A 140 10,000 P6SMB6.8AT3G C, CAPACITANCE (pF) 1000 P6SMB18AT3G P6SMB51AT3G 100 120 100 80 60 40 20 0 0 25 50 75 100 125 150 10 TJ = 25°C f = 1 MHz 1 1 10 P6SMB200AT3G 100 1000 TA, AMBIENT TEMPERATURE (°C) BIAS VOLTAGE (VOLTS) Figure 3. Pulse Derating Curve Figure 4. Typical Junction Capacitance vs. Bias Voltage TYPICAL PROTECTION CIRCUIT Zin Vin LOAD VL http://onsemi.com 4 P6SMB6.8AT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 5. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the der