P6KE6.8A (ON Semiconductor) - 600 Watt Peak Power Surmetic TM -40 Transient Voltage Suppressors (P6KE6.8A.pdf)

ON Semiconductor

Description
P6KE6.8A Series 600 Watt Peak Power Surmetict−40 Transient Voltage Suppressors Unidirectional* The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability and fast response time. These devices are ON Semiconductor ’s exclusive, cost-effective, highly reliable Surmetict axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features http://onsemi.com Cathode Anode • • • • • • • • • Working Peak Reverse Voltage Range − 5.8 to 171 V Peak Power − 600 W @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA above 10 V Maximum Temperature Coefficient Specified UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns Pb−Free Packages are Available* AXIAL LEAD CASE 017AA PLASTIC MARKING DIAGRAM www.DataSheet4U.com Mechanical Characteristics CASE: Void-free, Transfer-molded, Thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING: A P6KExxxA YYWWG G A = Assembly Location P6KExxxA = Device Number xxx = (See Table Page 3) YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 230_C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) @ TL ≤ 25°C Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8 in Derated above TL = 75°C Thermal Resistance, Junction−to−Lead Forward Surge Current (Note 2) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 600 5.0 50 RqJL IFSM TJ, Tstg 20 100 − 55 to +175 Unit W W mW/°C °C/W A °C ORDERING INFORMATION Device P6KExxxA P6KExxxAG P6KExxxARL P6KExxxARLG Package Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Shipping † 1000 Units / Box 1000 Units / Box 4000/Tape & Reel 4000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **Please refer to P6KE6.8CA − P6KE200CA for Bidirectional devices. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 8 Publication Order Number: P6KE6.8A/D P6KE6.8A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 50 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I Uni−Directional TVS http://onsemi.com 2 P6KE6.8A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6) = 50 A) VRWM (Note 3) V 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 94 102 111 Breakdown Voltage IR @ VRWM mA 1000 500 200 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VBR Min 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 105 114 124 (Note 4) (V) Nom 6.80 7.51 8.2 9.1 10 11.05 12 13.05 15.05 16 18 20 22 24 27.05 30 33.05 36 39.05 43.05 47.05 51.05 56 62 68 75.05 82 91 100 110.5 120 130.5 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21 23.1 25.2 28.4 31.5 34.7 37.8 41 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 @ IT mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VC @ IPP (Note 5) VC V 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77 85 92 103 113 125 137 152 165 179 IPP A 57 53 50 45 41 38 36 33 28 27 24 22 20 18 16 14.4 13.2 12 11.2 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 4 3.6 3.3 QVBR %/°C 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.09 0.092 0.094 0.096 0.097 0.098 0.099 0.1 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 Device* P6KE6.8A, G P6KE7.5A, G P6KE8.2A P6KE9.1A, G P6KE10A, G P6KE11A, G P6KE12A, G P6KE13A, G P6KE15A, P6KE16A, P6KE18A, P6KE20A, P6KE22A, P6KE24A, P6KE27A, P6KE30A, P6KE33A, P6KE36A, P6KE39A, P6KE43A, P6KE47A, P6KE51A, P6KE56A, P6KE62A, P6KE68A, P6KE75A, P6KE82A, P6KE91A, G G G G G G G G G G G G G G G G G G G G Device Marking P6KE6.8A P6KE7.5A P6KE8.2A P6KE9.1A P6KE10A P6KE11A P6KE12A P6KE13A P6KE15A P6KE16A P6KE18A P6KE20A P6KE22A P6KE24A P6KE27A P6KE30A P6KE33A P6KE36A P6KE39A P6KE43A P6KE47A P6KE51A P6KE56A P6KE62A P6KE68A P6KE75A P6KE82A P6KE91A P6KE100A P6KE110A P6KE120A P6KE130A P6KE100A, G P6KE110A, G P6KE120A, G P6KE130A, G P6KE150A, G P6KE150A 128 5 143 150.5 158 1 207 2.9 0.108 P6KE160A, G P6KE160A 136 5 152 160 168 1 219 2.7 0.108 P6KE170A, G P6KE170A 145 5 162 170.5 179 1 234 2.6 0.108 P6KE180A, G P6KE180A 154 5 171 180 189 1 246 2.4 0.108 P6KE200A, G P6KE200A 171 5 190 200 210 1 274 2.2 0.108 3. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C 5. Surge current waveform per Figure 4 and derate per Figures 1 and 2. 6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 3 P6KE6.8A Series NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25 C A _ 100 PPK , PEAK POWER (kW) 10 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 1 0.1 0.1 ms 1 ms 10 ms 100 ms 1 ms 10 ms tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (_C) Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve tr ≤ 10 ms 10,000 C, CAPACITANCE (pF) 100 MEASURED @ ZERO BIAS 1000 VALUE (%) PEAK VALUE − IPP PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP 2 HALF VALUE − 50 100 MEASURED @ VRWM 0 tP 10 0.1 1 10 100 VBR, BREAKDOWN VOLTAGE (VOLTS) 1000 0 1 2 3 t, TIME (ms) 4 Figure 3. Capacitance versus Breakdown Voltage PD, STEADY STATE POWER DISSIPATION (WATTS) Figure 4. Pulse Waveform 3/8″ 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE _C) 200 3/8″ DERATING FACTOR 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1 10 ms 2 5 10 D, DUTY CYCLE (%) 20 50 100 100 ms PULSE WIDTH 10 ms 1 ms Figure 5. Steady State Power Derating Figure 6. Typical Derating Factor for Duty Cycle http://onsemi.com 4 P6KE6.8A Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 7. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 8. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The P6KE6.8A series has very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for

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