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www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET General features Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z s s s s s s Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO-220FP TO-247 TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY 3 1 3 12 D²PAK I²PAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications s s HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC LIGHTING s July 2005 Rev 1 1/19 www.st.com 19 www.DataSheet4U.com 1 Absolute maximum ratings STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 1 Table 1. Absolute maximum ratings Absolute maximum ratings Parameter Value TO-220/D²/I²PAK TO-220FP VDS VDGR VGS ID ID IDM Note 2 PTOT Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor 10 5.7 600 600 ± 30 10 (Note 3) 5.7 (Note 3) 36 (Note 3) 35 0.28 4000 4.5 -2500 -55 to 150 -10 5.7 TO-247 V V V A A Unit Symbol 36 115 0.92 36 156 1.25 A W W/°C V V/ns V °C Vesd(G-S) dv/dt Note 1 VISO Tj Tstg G-S ESD (HBM C=100pF, R=1.5kΩ) Peak Diode Recovery voltage slope Insulation Withstand Volatge (DC) Operating Junction Temperature Storage Temperature Table 2. Thermal data TO-220 I²PAK D²PAK TO-220FP TO-247 3.6 60 62.5 300 50 0.8 Unit °C/W °C/W °C/W °C Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (when mounted on minimum Footprint) Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose 1.09 2/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z Table 3. Symbol IAR EAS EAR 1 Absolute maximum ratings Avalanche characteristics Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25°C, ID=IAR, VDD = 50V) Repetitive Avalanche Energy (pulse width limited by Tj max) Max Value 9 300 Unit A mJ 3.5 mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-Source Breakdown Voltage Test Conditions Igs=±1mA (Open Drain) Min. 30 Typ. Max. Unit V 1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/19 www.DataSheet4U.com 2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/Off Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250µA, V GS= 0 VDS = Max Rating, VGS = ±15V, VDS = 0 VDS= VGS, ID = 250 µA VGS= 10 V, ID= 20 A 3 3.75 0.65 Min. 600 1 50 ±10 Typ. Max. Unit V µA µA V Ω 4.5 0.75 Table 6. Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS =15V, ID = 4.5A Min. Typ. 7.8 1370 156 37 90 50 10 25 70 Max. Unit S pF pF pF pF nC nC nC Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=480V, ID = 8A VGS =10V (see Figure 19) Table 7. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching on/off Parameter Turn-on Delay Time Rise Time Test Conditions VDD=300 V, ID=4A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=300 V, ID=4A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=480 V, ID=8A, RG=4.7Ω, VGS=10V (see Figure 20) Min. Typ. 20 20 Max. Unit ns ns Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time 55 30 18 18 36 ns ns ns ns ns 4/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z Table 8. Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM 2 Electrical characteristics Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=10A, V GS=0 ISD=8A, di/dt = 100A/µs, VDD=40 V, Tj=150°C 570 4.3 15 Test Conditions Min. Typ. Max. 10 36 1.6 Unit A A V ns µC A (1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 5/19 www.DataSheet4U.com 2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2.1 Typical characteristics Safe Operating Area for TO-220/D²/I²PAK Figure 2. Thermal Impedanc for TO-220/D²/I²PAK Figure 1. Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP Figure 5. Safe Operating Area for TO-247 Figure 6. Thermal Impedance for TO-247 6/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z Figure 7. Output Characteristics Figure 8. 2 Electrical characteristics Transfer Characteristics Figure 9. Transconductance Figure 10. Static Drain-Source on Resistance Figure 11. Gate Charge vs Gate -Source Voltage Figure 12. Capacitance Variations 7/19 www.DataSheet4U.com 2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs vs Temperatute Temperature Figure 15. Source-drain Diode Forward Characteristics Figure 16. Normalized BVDSS vs Temperature Figure 17. Maximum Avalanche Energy vs Temperature 8/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 3 Test circuits 3 Test circuits Figure 19. Gate Charge Test Circuit Figure 18. Switching Times Test Circuit For Resistive Load Figure 20. Test Circuit For Indictive Load Switching and Diode Recovery Times 9/19 www.DataSheet4U.com 4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 11/19 www.DataSheet4U.com 4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 12/19 www.DataSheet4U.com STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/19 www.DataSheet4U.com 4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 14/19 www.DataSheet4U.co