Inductive Load Driver

NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features http://onsemi.com • Provides a Robust Driver Interface Between DC Relay Coil and • • • • • • Sensitive Logic Circuits Optimized to Switch Relays from 3.0 V to 5.0 V Rail Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain Pb−Free Package is Available RELAY/INDUCTIVE LOAD DRIVER SILICON SMALLBLOCKt 0.5 AMPERE, 8.0 VOLT CLAMP INTERNAL CIRCUIT DIAGRAM Drain (3) Gate (1) 1.0 k 300 k Typical Applications www.DataSheet4U.com • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Source (2) • Industrial:Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers • Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers 1 SOT−23 (TO−236) CASE 318 Recorders MARKING DIAGRAM JW4 M G G 1 JW4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device NUD3105LT1 NUD3105LT1G Package SOT−23 SOT−23 (Pb−Free) Shipping † 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 8 Publication Order Number: NUD3105/D NUD3105 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Drain to Source Voltage − Continuous Gate to Source Voltage – Continuous Drain Current – Continuous Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2) Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) Junction Temperature Operating Ambient Temperature Storage Temperature Range Total Power Dissipation (Note 1) Derating Above 25°C Thermal Resistance, Junction−to−Ambient Symbol VDSS VGS ID Ez Ezpk Value 6.0 6.0 500 50 4.5 150 −40 to 85 −65 to +150 225 1.8 556 Unit Vdc Vdc mA mJ mJ °C °C °C mW mW/°C °C/W TJ TA Tstg PD RqJA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) Ig = 1.0 mA Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ=85°C) (ID = 500 mA, VGS = 5.0 V, TJ=85°C) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) VGS(th) 0.8 0.8 RDS(on) − − − − − 300 200 350 − − − − − 400 − 570 1.2 1.3 0.9 1.3 0.9 − − − 1.2 − 1.4 1.4 V VBRDSS BVGSO IDSS − − IGSS 5.0 − − − 19 50 − − 15 15 6.0 − 8.0 − 9.0 8.0 V V mA Symbol Min Typ Max Unit mA W IDS(on) gFS mA mmhos http://onsemi.com 2 NUD3105 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V,VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) SWITCHING CHARACTERISTICS Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V) Low to High Propagation Delay; Figure 1 (5.0 V) High to Low Propagation Delay; Figure 1 (3.0 V) Low to High Propagation Delay; Figure 1 (3.0 V) Transition Times: Fall Time; Figure 1 (5.0 V) Rise Time; Figure 1 (5.0 V) Fall Time; Figure 1 (3.0 V) Rise Time; Figure 1 (3.0 V) Symbol tPHL tPLH tPHL tPLH Min − − − − − − − − Typ 25 80 44 44 23 32 53 30 Max − − − − nS tf tr tf tr − − − − Units nS Ciss Coss Crss − − − 25 37 8.0 − − − pF pF pF Symbol Min Typ Max Unit VIH Vin 50% 0V tPHL 90% Vout 50% 10% VOL tr tPLH VOH tf Figure 1. Switching Waveforms http://onsemi.com 3 NUD3105 TYPICAL CHARACTERISTICS 10 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25°C 1.0 VGS = 5.0 V VGS = 3.0 V VDS = 0.8 V 1.0 0.1 0.01 0.001 0.0001 0.1 0.01 0.001 VGS = 2.0 V 85°C 50°C 25°C 0.0001 0.00001 VGS = 1.0 V 0.00001 0.000001 −40°C 0.7 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics 1200 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 1000 800 600 400 200 0 −50 ID = 0.5 A VGS = 5.0 V ID = 0.25 A VGS = 3.0 V RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) ID = 0.5 A VGS = 3.0 V 50 45 40 35 30 25 Figure 3. Transfer Function −40°C ID = 250 mA 125°C 85°C 50°C 20 15 0.8 25°C 1.0 1.2 1.4 1.6 1.8 2.0 −25 0 25 50 75 100 125 TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with Gate−To−Source Voltage 13.0 8.20 VZ, ZENER CLAMP VOLTAGE (V) 8.18 VZ, ZENER VOLTAGE (V) 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 −50 −25 0 25 50 75 100 IZ = 10 mA 12.0 11.0 10.0 9.0 8.0 7.0 VGS = 0 V −40°C 25°C 85°C 6.0 0.1 1.0 10 100 1000 125 TEMPERATURE (°C) IZ, ZENER CURRENT (mA) Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3105 TYPICAL CHARACTERISTICS 1.2 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1.1 IGSS, GATE LEAKAGE (mA) 125°C 1.0 0.9 0.8 0.7 0.6 0.5 0.05 85°C 50°C 25°C −40°C 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 40 35 30 25 20 15 VGS = 3.0 V 10 5 0 −50 −25 0 25 50 75 100 125 VGS = 5.0 V ID, DRAIN CURRENT (A) TEMPERATURE (°C) Figure 8. On−Resistance vs. Drain Current and Temperature 1.0 VGS = 3.0 V, TC = 25°C Figure 9. Gate Leakage vs. Temperature ID−Continuous = 0.5 A RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ID, DRAIN CURRENT (A) DC PW = 0.1 s DC = 50% PW = 10 ms DC = 20% PW = 7.0 ms DC = 5% Typical IZ vs. VZ 100 0.1 V(BR)DSS min = 6.0 V 0.01 0.01 0.1 1.0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 10. Safe Operating Area 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 PW SINGLE PULSE t1 t2 PERIOD 0.01 DUTY CYCLE = t1/t2 0.001 0.01 0.1 1.0 10 100 t1, PULSE WIDTH (ms) 1000 10,000 100,000 1,000,000 Figure 11. Transient Thermal Response http://onsemi.com 5 NUD3105 Designing with this Data Sheet 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the NUD3105 will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 and 11 with the SOA notes to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. 4. Verify that the circuit driving the gate will meet the VGS(th) from the Electrical Characteristics table. 5. Using the max output current calculated in step 1, check Figure 7 to insure that the range of Zener clamp voltage over temperature will satisfy all system & EMI requirements. 6. Use IGSS and IDSS from the Electrical Characteristics table to ensure that “OFF” state leakage over temperature and voltage extremes does not violate any system requirements. 7. Review circuit operation and insure none of the device max ratings are being exceeded. APPLICATIONS DIAGRAMS +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + Vout (3) NUD3105LT1 Vout (3) NUD3105LT1 Vin (1) Vin (1) GND (2) GND (2) Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V Level Translating Interface http://onsemi.com 6 NUD3105 Max Continuous Current Calculation for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C Assuming ±10% Make Tolerance, R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C TC for Annealed Copper Wire is 0.4%/°C R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc + AROMAT TX2−5V − Vout (3) NUD3105LT1 AROMAT JS1E−5V + +4.5 TO +5.5 Vdc + AROMAT JS1E−5V − + AROMAT JS1E−5V − AROMAT JS1E−5V + − − Vout (3) NUD3105LT1 Vin (1) GND (2) Vin (1) GND (2) Figure 13. A 140 mW, 5.0 V Relay with TTL Interface Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank http://onsemi.com 7 NU