Power MOSFET

NTLTS3107P Power MOSFET Features −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs Low Turn−On Voltage This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) TYP 12.2 mW @ −4.5 V 15.6 mW @ −2.5 V 26.2 mW @ −1.8 V P−Channel MOSFET S Value −20 $8.0 −8.3 −6.0 −12 PD ID PD IDM TJ, TSTG IS TL 1.6 3.3 −5.9 −3.7 0.8 −25 −55 to 150 −1.6 260 W A °C A °C Drain Symbol RqJA RqJA RqJA Max 80 38 160 Unit °C/W °C/W °C/W Drain Drain Drain W A 1 Micro8 Leadless CASE 846C A Y WW G www.DataSheet4U.com ID MAX −8.3 A Applications • Optimized for Load Management Applications • Charge Control in Battery Powered Systems • Cell Phones, DSC, Notebooks, Portable Games, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current (Note 1) Steady State t v 10 s Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms TA = 25°C TA = 85°C TA = 25°C TA = 25°C Symbol VDSS VGS ID Unit V V A G D MARKING DIAGRAM 1 3107 AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 8 7 6 5 1 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 10 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Source Source Source Gate Drain 2 3 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq. in. pad size (Cu. area = 1.127 sq. in. [1 oz] including traces). 2. Surface−mounted on FR4 board using minimum recommended pad size (Cu. area = TBD sq. in.). (Bottom View) ORDERING INFORMATION Device NTLTS3107PR2G Package Micro8 (Pb−Free) Shipping † 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 0 1 Publication Order Number: NTLTS3107P/D NTLTS3107P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −8.0 A VGS = −2.5 V, ID = −7.0 A VGS = −1.8 V, ID = −5.8 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain “Miller” Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.6 A TJ = 25°C TJ = 125°C VGS = −4.5 V, VDS = −10 V, ID = −8.0 A, RG = 3.0 W 30 20 250 80 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDS = −16 V, ID = −8.0 A VGS = 0 V, f = 1 MHz, VDS = −16 V 4645 465 285 40 3.0 7.0 11 6500 650 400 60 nC pF gFS VDS = −5 V, ID = −8.0 A −0.45 3.4 12.2 15.6 26.2 25 S 16 21 −1.2 V mV/°C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = −16 V TJ = 25°C VGS = 0 V, ID = −250 mA −20 11 −10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = $8.0 V DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage VGS = 0 V, IS = −1.6 A −0.7 0.5 75 28 47 81.5 nC 100 ns −1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLTS3107P 32 −ID, DRAIN CURRENT (A) VGS = 10 V 5V 24 3.6 V 16 3.2 V 2.8 V 2.4 V 8 1.2 V 0 2 4 2V 1.8 V 6 8 10 0 0 32 4.5 V −ID, DRAIN CURRENT (A) 4V 24 16 TJ = 125°C TJ = 25°C TJ = −55°C 8 0 2 4 6 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.026 VGS = −4.5 V 0.022 TJ = 125°C 0.018 TJ = 25°C 0.014 TJ = −55°C 0.01 0 5 10 15 20 −ID, DRAIN CURRENT (A) 25 30 0.026 VGS = −2.5 V 0.022 TJ = 125°C 0.018 TJ = 25°C 0.014 TJ = −55°C 0.01 0 5 10 15 20 −ID, DRAIN CURRENT (A) 25 30 Figure 3. On−Resistance versus Drain Current and Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.02 TJ = 25°C 0.019 0.018 0.017 0.016 0.015 VGS = 4.5 V 0.014 0 6 12 18 24 30 VGS = 3.5 V VGS = 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.06 0.055 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 1 Figure 4. On−Resistance versus Drain Current and Temperature ID = 13.2 A ID = 3.5 A 2 3 4 5 −ID, DRAIN CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance versus Drain Current and Gate Voltage Figure 6. On−Resistance versus Gate Voltage http://onsemi.com 3 NTLTS3107P RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 ID = −8 A VGS = −4.5 V 1.2 −VGS, THRESHOLD VARIANCE (V) 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −50 ID = −250 mA 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. On−Resistance Variation with Temperature −VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 8000 C, CAPACITANCE (pF) 6000 4000 2000 0 0 4 8 12 16 TJ = 25°C VGS = 0 V Ciss 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 10 Figure 8. Threshold Voltage ID = 3.2 A TJ = 25°C Coss 20 20 30 40 50 60 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 9. Capacitance Variation Figure 10. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10000 −IS, SOURCE CURRENT (A) VDS = −10 V ID = −1 A VGS = −10 V td(off) 100 tf 100 VGS = 0 V TJ = 25°C 1000 t, TIME (ns) 10 1 10 td(on) tr 1 1 10 RG, GATE RESISTANCE (W) 100 0.1 0 0.4 0.8 1.2 1.6 2 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation versus Gate Resistance Figure 12. Diode Forward Voltage versus Current http://onsemi.com 4 NTLTS3107P PACKAGE DIMENSIONS MICRO8 LEADLESS CASE 846C−01 ISSUE B A W Y T J SEATING PLANE NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. THE TERMINAL #1 IDENTIFIER AND TERMINAL NUMBERING CONVENTION SHALL CONFORM TO JESD 95−1 SPP−012. DETAILS OF TERMINAL #1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE ZONE INDICATED. THE TERMINAL #1 IDENTIFIER MAY BE EITHER A MOLD OR MARKED FEATURE. 4. DIMENSION D APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.25 MM AND 0.30 MM FROM TERMINAL TIP. DIMENSION L1 IS THE TERMINAL PULL BACK FROM PACKAGE EDGE, UP TO 0.1 MM IS ACCEPTABLE. L1 IS OPTIONAL. 5. DEPOPULATION IS POSSIBLE IN A SYMMETRICAL FASHION. 6. OPTIONAL SIDE VIEW CAN SHOW LEADS 5 AND 8 REMOVED. DIM A B C D E F G H J K L L1 P U MILLIMETERS MIN MAX 3.30 BSC 3.30 BSC 0.85 0.95 0.25 0.35 1.30 1.50 2.55 2.75 0.65 BSC 0.95 1.15 0.25 BSC 0.00 0.05 0.35 0.45 0.00 0.10 1.28 1.38 0.20 −−− AA 8 2X 0.15 T 2X 0.15 T NOTE 4 0.10 T W Y 0.05 T W D 8X 8 1 2 3 4 G 6X DETAIL Z U 4X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice 1 to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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