NPN Silicon Oscillator and Mixer Transistor

NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. Features http://onsemi.com COLLECTOR 3 1 BASE • • • • High Gain Bandwidth Product: fT = 2000 MHz Minimum Tightly Controlled hFE Range: hFE = 120 to 250 Low Feedback Capacitance: CRE = 0.45 pF Typical Pb−Free Package is Available 2 EMITTER MAXIMUM RATINGS Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Electrostatic Discharge Symbol VCBO VCEO VEBO IC ESD Value 30 15 3.0 Units V V V SOT−323/SC−70 CASE 419 STYLE 3 1 50www.DataSheet4U.com mA HBM − Class 1C MM − Class A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) −55 to +150 Unit mW mW/°C °C/W °C/W °C 1 3M = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 3M M G G MARKING DIAGRAM RqJA RqJL TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION Device NSF2250WT1 NSF2250WT1G Package SOT−323 SOT−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 5 Publication Order Number: NSF2250WT1/D NSF2250WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector Cutoff Current VCB = 12 V, IE = 0 DC Current Gain VCE = 10 V, IC = 5.0 mA Collector Saturation Voltage IC = 10 mA, IB = 1.0 mA Gain Bandwidth Product VCE = 3 V, IE = −5.0 mA Output Capacitance VCB = 3 V, IE = 0 mA, f = 1.0 MHz Collector to Base Time Constant VCE = 3 V, IE = −5.0 mA, f = 31.9 MHz Feedback Capacitance VCB = 10 V, IE = 0 mA, f = 1.0 MHz Symbol ICBO − hFE 120 VCE(sat) − fT 2.0 COB − CCSrb’b CRE − 0.45 − − 0.7 3.5 1.2 ps 8.0 pF 2.3 − pF − 0.5 GHz − 250 V − 0.1 − Min Typ Max Unit mA 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 403°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 2 NSF2250WT1 250 IC, COLLECTOR CURRENT (mA) 350 300 hFE, DC CURRENT GAIN 200 VCE = 12 V TA = 125°C 250 200 25°C 150 100 50 VCE = 5 V 0 0.1 1 10 hFE, DC CURRENT GAIN 100 0 0.1 1 10 IC, COLLECTOR CURRENT 100 −55°C 150 5V 100 3V 50 Figure 2. DC Current Gain versus Collector Current 10,000 ft, GAIN BANDWIDTH PRODUCT (MHz) Figure 3. DC Current Gain versus Collector Current CRE, FEEDBACK CAPACITANCE (pF) 10 f = 1 MHz TA = 25°C 5V VCE = 12 V 1000 1 100 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.1 1 10 VCB, COLLECTOR BASE VOLTAGE (VOLTS) 100 Figure 4. Gain Bandwidth Product versus Collector Current 1.6 1.4 Cob, CAPACITANCE (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 f = 1 MHz TA = 25°C Figure 5. Device Capacitance versus Collector Base Voltage 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (VOLTS) 35 Figure 6. Output Capacitance http://onsemi.com 3 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang VCE = 2.5 V, IC = 2.5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.926 0.855 0.667 0.513 0.411 0.342 0.297 0.261 0.236 0.218 0.205 0.190 0.215 0.230 0.236 −14.124 −26.794 −47.287 −60.931 −70.342 −77.461 −84.335 −90.986 −97.798 −104.905 −112.449 −147.224 −171.677 −172.291 −155.125 6.803 6.224 5.033 4.072 3.326 2.831 2.445 2.154 1.935 1.755 1.617 1.200 1.011 0.889 0.866 162.639 148.649 126.317 110.981 100.524 92.771 86.222 80.493 75.382 70.672 66.258 48.079 33.299 20.271 10.984 0.018 0.034 0.058 0.074 0.090 0.104 0.117 0.131 0.144 0.155 0.168 0.219 0.258 0.294 0.340 82.792 73.296 62.292 58.641 57.333 56.067 55.166 53.800 52.087 50.745 49.386 42.418 35.910 31.024 28.868 0.973 0.921 0.807 0.736 0.694 0.670 0.651 0.637 0.627 0.617 0.608 0.575 0.544 0.510 0.450 −7.062 −12.818 −19.210 −21.979 −23.695 −25.311 −27.095 −29.095 −31.026 −33.167 −35.352 −46.016 −58.267 −68.713 −81.517 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang VCE = 3 V, IC = 5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.858 0.733 0.493 0.362 0.288 0.242 0.212 0.190 0.177 0.167 0.163 0.176 0.210 0.226 0.239 −20.126 −36.552 −58.358 −69.976 −78.272 −85.666 −93.237 −101.308 −109.656 −118.336 −127.188 −164.287 −174.155 −159.754 −144.224 12.065 10.452 7.472 5.544 4.337 3.582 3.048 2.656 2.375 2.145 1.968 1.435 1.187 1.034 0.995 156.269 139.116 115.678 103.053 94.866 88.592 83.504 78.785 74.561 70.348 66.700 50.083 35.998 23.227 14.088 0.017 0.029 0.047 0.062 0.075 0.090 0.103 0.116 0.128 0.141 0.153 0.203 0.246 0.288 0.340 78.802 69.100 62.893 62.188 61.876 61.259 59.861 58.802 57.017 55.629 53.851 47.574 41.767 36.614 34.458 0.945 0.850 0.712 0.653 0.621 0.603 0.590 0.580 0.573 0.563 0.555 0.528 0.501 0.469 0.413 −10.278 −16.656 −20.497 −21.545 −22.551 −23.975 −25.526 −27.405 −29.334 −31.402 −33.301 −43.164 −54.213 −63.689 −74.387 http://onsemi.com 4 NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang VCE = 3 V, IC = 10 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.643 0.459 0.289 0.225 0.192 0.172 0.161 0.156 0.155 0.156 0.163 0.201 0.237 0.247 0.259 −35.313 −53.013 −70.035 −80.644 −91.607 −102.488 −113.748 −125.151 −135.549 −145.469 −153.718 −175.526 −159.398 −147.097 −133.925 15.384 11.650 7.214 5.260 4.122 3.419 2.929 2.575 2.313 2.099 1.925 1.415 1.173 1.021 0.982 140.063 121.580 104.714 96.934 91.266 86.447 82.212 78.231 74.282 70.461 67.004 50.535 36.726 24.113 15.023 0.015 0.024 0.040 0.053 0.068 0.082 0.096 0.107 0.119 0.131 0.141 0.193 0.240 0.289 0.346 69.823 63.636 65.531 66.205 66.344 64.574 63.206 61.822 60.606 59.154 57.409 52.024 46.396 41.529 38.491 0.864 0.738 0.647 0.618 0.598 0.584 0.572 0.561 0.553 0.543 0.536 0.505 0.477 0.444 0.382 −14.048 −17.013 −17.265 −18.444 −20.216 −22.273 −24.418 −26.828 −28.821 −31.132 −33.247 −43.365 −54.652 −64.094 −75.243 TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C) Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang VCE = 10 V, IC = 5 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 0.877 0.765 0.539 0.406 0.334 0.286 0.252 0.227 0.208 0.190 0.179 0.162 0.185 0.200 0.208 −17.278 −31.274 −49.213 −57.758 −63.347 −68.461 −73.828 −79.612 −86.135 −93.121 −100.507 −139.494 −167.453 −175.534 −159.130 11.972 10.386 7.575 5.678 4.464 3.698 3.159 2.766 2.474 2.237 2.047 1.495 1.242 1.082 1.050 157.707 140.944 118.277 105.478 97.467 91.347 86.264 81.745 77.803 73.571 70.150 53.949 40.156 27.306 18.234 0.012 0.022 0.037 0.049 0.062 0.073 0.085 0.095 0.106 0.116 0.125 0.169 0.207 0.247 0.296 81.580 72.099 66.849 66.104 65.473 64.460 63.014 62.100 60.785 59.532 57.905 52.604 47.697 44.045 42.716 0.972 0.900 0.803 0.757 0.729 0.717 0.706 0.697 0.690 0.682 0.674 0.652 0.631 0.609 0.557 −7.268 −12.126 −14.944 −16.182 −17.508 −19.007 −20.874 −22.551 −24.442 −26.405 −28.385 −37.411 −47.834 −55.962 −65.696 http://onsemi.com 5 NSF2250WT1 VCE = 2.5 V, IC = 2.5 mA S11 j25 j50 j100 S12 120° 90° 60° 150° j10 3 GHz 3 GHz 0 10 25 50 100 0.05 GHz −j10 −150° 0 180° 0.05 GHz 0.2 0.3 0.4 30° 0.5 0° −30° −j25 −j50 −j100 −120° −90° −60° Figure 7. Input Reflection Coefficient Figure 8. Reverse Transmission Coefficient S22 j25 j50 j100 S21 120° 90° 60° 150° j10 0.05 GHz 0 10 25 50 100 0.05 GHz 3 GHz −j10 −150° 0 180° 3 GHz 24 6 8 30° 10 0° −30° −j25 −j50 −j100 −120° −90° −60° Figure 9. Output Reflection Coefficient Figure 10. Forward Transmission Coefficient http://onsemi.com 6 NSF2250WT1 VCE = 3.0 V, IC = 10 mA S11 j25 j50 j100 S12 120° 90° 60° 150° j10 3 GHz 3 GHz 30° 0 10 25 50 100 0 180° 0.05 GHz 0.2 0.3 0.4 0.5 0° −j10 0.05 GHz −150° −30° −j25 −j50 −j100 −120° −90° −60° Figure 11. Input Reflection Coefficient Figure 12. Reverse Transmission Coefficient S22 j25 j50 j100 S21 120° 90° 60° 150° j10 0.05 GHz 30° 0 10 25 50 100 0 0.05 GHz 180° 3 GHz 48 12 16 20 0° 3 GHz −j10 −150° −30° −j25 −j50 −j100 −120° −90° −60° Figure 13. Output Reflection Coefficient Figure 14. Forward Transmission Coefficient http://onsemi.com 7 NSF2250WT1 TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C) Freq MHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang VCE = 2.5 V, IC = 2.5 mA 50 100 200 400 600 800 1000 1500 2000 0.627 0.626 0.622 0.608 0.589 0.566 0.541 0.476 0.397 176.455 172.821 165.583 151.867 138.455 126.103 114.811 89.445 68.206 1.6218 1.6153 1.6042 1.5630 1.5099 1.4461 1