(NSBA114EDXV6T5 Series) Dual Bias Resistor Transistors

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low−power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) (6) http://onsemi.com (2) R2 (1) • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices www.DataSheet4U.com 1 SOT−563 CASE 463A PLASTIC STYLE 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value −50 −50 −100 Unit Vdc Vdc mAdc xx M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range Symbol PD RqJA Max 357 2.9 350 Unit mW mW/°C °C/W xx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSBA1xxxDXV6T1 Package Shipping † SOT−563* 4000/Tape & Reel NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel Symbol PD RqJA TJ, Tstg Max 500 4.0 250 −55 to +150 Unit mW mW/°C °C/W °C NSBA1xxxDXV6T5 SOT−563* 8000/Tape & Reel NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **This package is inherently Pb−Free. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 6 Publication Order Number: NSBA114EDXV6/D NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES DEVICE MARKING AND RESISTOR VALUES Device* NSBA114EDXV6T1 / T5 NSBA124EDXV6T1 / T5 NSBA144EDXV6T1 / T5 NSBA114YDXV6T1 / T5 NSBA114TDXV6T1 / T5 NSBA143TDXV6T1 / T5 NSBA113EDXV6T1 / T5 NSBA123EDXV6T1 / T5 NSBA143EDXV6T1 / T5 NSBA143ZDXV6T1 / T5 NSBA124XDXV6T1 / T5 NSBA123JDXV6T1 / T5 NSBA115EDXV6T1 / T5 NSBA144WDXV6T1 (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Package SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M 0N 0P R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (kW) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 100 22 *The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = −50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 ICBO ICEO IEBO − − − − − − − − − − − − − − − − −50 −50 − − − − − − − − − − − − − − − − − − −100 −500 −0.5 −0.2 −0.1 −0.2 −0.9 −1.9 −4.3 −2.3 −1.5 −0.18 −0.13 −0.2 −0.05 −0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA) (IC = −10 mA, IB = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1 (IC = −10 mA, IB = −1 mA) NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc VCE(sat) − − −0.25 Vdc http://onsemi.com 2 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (continued) Characteristic ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (VCE = −10 V, IC = −5.0 mA) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 VOH hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 − − − − − − − − − − − − − − −4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − Vdc −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 − Vdc Symbol Min Typ Max Unit Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW) VOL (VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW) NSBA113EDXV6T1 (VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW) NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 Input Resistor NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 kW Resistor Ratio NSBA114EDXV6T1/NSBA124EDXV6T1/ NSBA144EDXV6T1/NSBA115EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1 R1/R2 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ALL NSBA114EDXV6T1 SERIES DEVICES 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1 IC/IB = 10 TA = −25°C 0.1 75°C 25°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 Figure 1. Derating Curve − ALL DEVICES Figure 2. VCE(sat) versus IC TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4 f = 1 MHz lE = 0 V TA = 25°C TA = 75°C 100 25°C −25°C C ob , CAPACITANCE (pF) 3 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 75°C 25°C V in , INPUT VOLTAGE (VOLTS) TA = −25°C 100 VO = 0.2 V IC, COLLECTOR CURRENT (mA) 10 1 10 TA = −25°C 25°C 75°C 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.001 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current http://onsemi.com 4 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V 1 TA = −25°C 25°C TA = 75°C 100 25°C −25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C TA = −25°C C ob , CAPACITANCE (pF) 3 2 1 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 −25°C TA = −25°C 0.1 75°C 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (m