Dual SPST Analog Switch

NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the Ultra−Small 8 package. The use of advanced 0.6 m CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. Features http://onsemi.com MARKING DIAGRAM 8 8 1 US8 US SUFFIX CASE 493 A9 M G A9 M G G • • • • • • • • • • • On Resistance is 20 W Typical at 5.0 V Matching is < 1.0 W Between Sections 2.0−6.0 V Operating Range Ultra Low < 5.0 pC Charge Injection Ultra Low Leakage < 1.0 nA at 5.0 V, 25°C Wide Bandwidth > 200 MHz, −3.0 dB 2000 V ESD (HBM) RON Flatness "6.0 W at 5.0 V US8 Package Independent Enables; One Positive, One Negative Pb−Free Package is Available 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. www.DataSheet4U.com PIN ASSIGNMENT 1 2 3 NO1 COM1 IN2 GND NC2 COM2 IN1 VCC NO1 1 8 VCC 4 5 COM1 2 7 IN1 6 7 8 IN2 3 6 COM2 FUNCTION TABLE GND 4 5 NC2 On/Off Enable Input L H Analog Switch 1 Off On Analog Switch 2 On Off Figure 1. Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 6 Publication Order Number: NLAS325/D NLAS325 MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC IGND TSTG TL TJ qJA PD MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1.0 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance (Note 1) Power Dissipation in Still Air at 85°C Moisture Sensitivity Flammability Rating ESD Withstand Voltage Oxygen Index: 28 to 34 Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) VI < GND VO < GND Parameter Value *0.5 to )7.0 *0.5 to )7.0 *0.5 to )7.0 *50 *50 $50 $100 $100 *65 to )150 260 )150 250 250 Level 1 UL 94 V−0 @ 0.125 in > 2000 > 200 N/A V Unit V V V mA mA mA mA mA °C °C °C °C/W mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Parameter Min 2.0 GND GND *55 0 0 Max 5.5 5.5 VCC )125 100 20 Unit V V V °C ns/V NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C TJ = 120°C TJ = 100°C TJ = 110°C TJ = 90°C TJ = 80°C 100 TIME, YEARS 1 1 10 1000 Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS325 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VIH Parameter Minimum High−Level Input Voltage, Select Inputs Condition VCC 2.0 2.5 3.0 4.5 5.5 2.0 2.5 3.0 4.5 5.5 VIN = 5.5 V or GND Select and VIS = VCC or GND 0 V to 5.5 V 5.5 *555C to 255C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $0.2 4.0 t855C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 4.0 t1255C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 8.0 Unit V VIL Maximum Low−Level Input Voltage, Select Inputs V IIN ICC Maximum Input Leakage Current, Select Inputs Maximum Quiescent Supply Current mA mA DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Symbol RON Parameter Maximum “ON” Resistance (Figures 16 − 22) Condition VIN = VIL or VIH VIS = GND to VCC IINI v 10 mA VIN = VIL or VIH IINI v 10 mA VIS = 1.0 V, 2.0 V, 3.5 V VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V VCC 2.5 3.0 4.5 5.5 4.5 *555C to 255C 85 45 30 25 4.0 t855C 95 50 35 30 4.0 t1255C 105 55 40 35 5.0 Unit W RFLAT(ON) ON Resistance Flatness (Figures 16 − 22) W INC(OFF) INO(OFF) ICOM(ON) NO or NC Off Leakage Current (Figure 8) COM ON Leakage Current (Figure 8) 5.5 5.5 1.0 1.0 10 10 100 100 nA nA http://onsemi.com 3 NLAS325 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit VCC Symbol tON Parameter Turn−On Time (Figures 11 and 12) Test Conditions RL = 300 W, CL = 35 pF (Figures 4 and 5) (V) 2.5 3.0 4.5 5.5 2.5 3.0 4.5 5.5 2.5 3.0 4.5 5.5 VIS (V) 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 *555C to 255C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Typ* 23 16 11 9.0 7.0 5.0 4.0 3.0 12 11 6.0 5.0 Max 35 24 16 14 12 10 6.0 5.0 t855C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 38 27 19 17 15 13 9.0 8.0 t1255C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 41 30 22 20 18 16 12 11 Unit ns tOFF Turn−Off Time (Figures 11 and 12) RL = 300 W, CL = 35 pF (Figures 4 and 5) ns tBBM Minimum Break−Before−Make Time VIS = 3.0 V (Figure 3) RL = 300 W, CL = 35 pF ns *Typical Characteristics are at 25°C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8.0 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) VCC Symbol BW Parameter Maximum On−Channel −3.0 dB Bandwidth or Minimum Frequency Response (Figure 10) Maximum Feedthrough On Loss Condition VIN = 0 dBm VIN centered between VCC and GND (Figure 6) VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 6) f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3.0 ns RIS = 0 W, CL = 1000 pF Q = CL * DVOUT (Figure 7) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 5.0 VPP sine wave f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) (V) 3.0 4.5 5.5 3.0 4.5 5.5 3.0 4.5 5.5 3.0 5.5 Typical 25°C 145 170 175 *2.0 *2.0 *2.0 *93 *93 *93 1.5 3.0 Unit MHz VONL dB VISO Off−Channel Isolation (Figure 9) dB Q Charge Injection Select Input to Common I/O (Figure 14) pC THD VCT Total Harmonic Distortion THD + Noise (Figure 13) Channel−to−Channel Crosstalk % 5.5 5.5 3.0 0.1 dB *90 *90 http://onsemi.com 4 NLAS325 DUT VCC 0.1 mF 300 W Output VOUT 35 pF Input VCC GND tBMM 90% Output 90% of VOH Switch Select Pin GND Figure 3. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 mF Open Output VOUT 300 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50% Figure 4. tON/tOFF VCC DUT Output Open 300 W VOUT 35 pF Input VCC 50% 0V VOH Output VOL 10% tOFF tON 10% 50% Input Figure 5. tON/tOFF http://onsemi.com 5 NLAS325 50 W Reference Input Output 50 W Generator 50 W DUT Transmitted Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz for VIN at 100 kHz to 50 MHz VOUT VIN Bandwidth (BW) = the frequency 3.0 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT Open Output VIN VCC GND CL Output Off Off DVOUT VIN On Figure 7. Charge Injection: (Q) 100 10 LEAKAGE (nA) 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 −55 −20 25 70 85 125 TEMPERATURE (°C) Figure 8. Switch Leakage vs. Temperature http://onsemi.com 6 NLAS325 0 0 1.0 −20 2.0 3.0 (dB) −40 (dB) 4.0 Off Isolation 5.0 6.0 7.0 −80 VCC = 5.0 V TA = 25°C 8.0 9.0 100 200 10.0 0.01 VCC = 5.0 V TA = 25°C 0.1 1 10 PHASE SHIFT Bandwidth (ON−RESPONSE) +15 +10 +5 0 −5 −10 −15 −20 −25 −30 −35 100 300 PHASE (°) 5 −60 −100 0.01 0.1 1 10 FREQUENCY (MHz) FREQUENCY (MHz) Figure 9. Off−Channel Isolation Figure 10. Typical Bandwidth and Phase Shift 30 25 20 15 10 5 0 2.5 tOFF (ns) tON (ns) TIME (ns) 30 VCC = 4.5 V 25 20 15 10 5 0 −55 tON tOFF TIME (ns) 3 3.5 4 4.5 5 −40 25 Temperature (°C) 85 125 VCC (VOLTS) Figure 11. tON and tOFF vs. VCC at 255C Figure 12. tON and tOFF vs. Temp 1 VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%) 3.0 2.5 2.0 Q (pC) 1.5 1.0 0.5 0 VCC = 3 V VCC = 5 V 0.1 VINpp = 5.0 V VCC = 5.5 V 0.01 1 10 FREQUENCY (kHz) 100 −0.5 0 1 2 VCOM (V) 3 4 Figure 13. Total Harmonic Distortion Plus Noise vs. Frequency Figure 14. Charge Injection vs. COM Voltage http://onsemi.com 7 NLAS325 100 10 1 ICC (nA) 0.1 0.01 0.001 0.0001 0.00001 −40 VCC = 3.0 V 20 VCC = 5.0 V −20 0 20 60 80 100 120 0 0.0 1.0 VCC = 5.5 V 2.0 3.0 VIS (VDC) 4.0 5.0 6.0 RON (W) 60 VCC = 2.5 V 40 VCC = 3.0 V VCC = 4.0 V 100 VCC = 2.0 V 80 Temperature (°C) Figure 15. ICC vs. Temp, VCC = 3.0 V and 5.0 V Figure 16. RON vs. VCC, Temp = 255C 100 90 80 70 RON (W) RON (W) 125°C 25°C −55°C 85°C 0.5 1.0 1.5 2.0 2.5 60 50 40 30 2