Silicon Junction Field-Effect Transistor

F-42 01/99 NJ903L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G D-S Device in this Databook based on the NJ903L Process. S-D Datasheet IF9030 G Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. D-S www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Input Capacitance Feedback Capacitance Equivalent Noise Voltage Ciss Crss eN ¯ 50 18 0.5 pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 Min – 20 Typ – 25 –5 – 500 500 –3 Max Unit V pA mA V NJ903L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-43 NJ903L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 250 Transconductance in mS 250 VGS = Ø V Drain Current in mA 100 VGS = –0.5 V 150 VGS = –1.0 V 100 VGS = –1.5 V 50 VGS = –2.0 V 0 5 10 15 20 200 150 100 0 – 0.5 – 1.0 – 1.5 – 2.0 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 250 200 150 100 50 Transconductance in mS 250 Gfs as a Function of IDSS 200 150 0 –1 –2 –3 0 50 100 150 200 Gate Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency 4.0 Noise Voltage in nV/√Hz IDSS = 65 mA VDG = 4 V ID = 5 mA 80 Ciss Capacitance as a Function of Vgs Vds = 5 V 2.0 Capacitance in pF 3.0 60 40 Crss 1.0 20 10 100 1K Frequency in Hz 10K 100K 0 – 10 – 15 – 20 Gate Source Voltage in Volts