F-36
01/99
NJ450 Process
Silicon Junction Field-Effect Transistor
¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
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Devices in this Databook based on the NJ450 Process. Datasheet
2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A
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Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate.
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www.DataSheet4U.com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance rds(on) gfs Ciss Crss 7 250 20 10 Ω mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 Min – 25 Typ – 30 – 50 – 1000 600 – 10 Max Unit V pA mA V
NJ450 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA
ID = 1 mA, VGS = ØV VDS = 15V, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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01/99
F-37
NJ450 Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
VGS(OFF) = Ð4.5 V
Gfs as a Function of VGS(OFF) 450 Transconductance in mS
300 VGS = Ø V Drain Current in mA 250 VGS = –1 V 200 VGS = –2 V 150 VGS = –3 V 100 VGS = –4 V 0 5 10 15 20
300
150
0
–1
–2
–3
–4
–5
–6
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Ω Drain Saturation Current in mA 500 400 300 200 100 30 25 20 15 10 5 0 –1
RDS as a Function of VGS(OFF)
0
–1
–2
–3
–4
–5
–6
–2
–3
–4
–5
–6
Drain Source Cutoff Voltage in Volts
Gate Source Cutoff Voltage in Volts
Input Capacitance as a Function of VGS 100 80 VDS = Ø V 60 VDS = 5 V 40 20 VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 100 80 60
Feedback Capacitance as a Function of VGS
VDS = Ø V 40 20 VDS = 5 V VDS = 10 V
0
–4
–8
– 12
– 16
0
–4
–8
– 12
– 16
Gate Source Voltage in Volts
Gate Source Voltage in Volts
