Silicon Junction Field-Effect Transistor

F-38 01/99 NJ450L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G Devices in this Databook based on the NJ450L Process. Datasheet 2N6550 IF4500 IF4501 IFN860 G Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate. S-D www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 100 35 10 0.9 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 –4 Min – 25 Typ – 25 – 50 Max Unit V pA mA V NJ450L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-39 NJ450L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 150 Transconductance in mS 150 VGS = Ø V Drain Current in mA 125 VGS = – 0.5 V 100 VGS = –1.0 V 75 VGS = –1.5 V 50 VGS = –2.0 V 0 5 10 15 20 100 50 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 – 3.0 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 500 Transconductance in mS 400 300 200 100 120 100 80 60 40 20 0 50 Gfs as a Function of IDSS 0 –1 –2 –3 –4 –5 –6 100 150 200 250 300 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency 4.0 Noise Voltage in nV/√Hz IDSS = 35 mA VDG = 4 V ID = 5 mA 100 Capacitance as a Function of VGS VDS = Ø Capacitance in pF 80 60 40 Ciss 20 Crss 3.0 2.0 1.0 10 100 1K Frequency in Hz 10K 100K 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts