Silicon Junction Field-Effect Transistor General Purpose Amplifier

F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ32 Process. Datasheet 2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 4 6 1.3 7 7.0 3 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 1 – 0.5 Min – 25 Typ – 50 – 10 – 100 22 –6 Max Unit V pA mA V NJ32 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-19 NJ32 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 6 Transconductance in mS 10 VGS = Ø V Drain Current in mA 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V 2 VGS = –2.0 V 0 5 10 15 20 5 4 3 2 1 0 –2 –4 –6 –8 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 20 Drain Current in mA 24 Drain Current as a Function of VGS VD = 15 V 20 16 12 8 4 0 –2 –4 –6 –8 IDSS = 24 mA IDSS = 18 mA IDSS = 14 mA IDSS = 10 mA IDSS = 7 mA 15 10 5 0 –1 –2 –3 –4 –5 Gate Source Cutoff Voltage in Volts Gate Source Voltage in Volts Input Capacitance vs. Gate Source Voltage 10 8 VDS = Ø V 6 4 2 VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 10 8 6 4 2 Feedback Capacitance vs. Gate Source Voltage VDS = Ø V VDS = 5 V VDS = 10 V 0 –4 –8 – 12 – 16 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts Gate Source Voltage in Volts F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ32 Process. Datasheet 2N5020, 2N5021 2N5460, 2N5461 2N5462 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 2.5 3.2 1.7 10 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) –1 0.5 Min 30 Typ 50 1 2 – 15 7 Max Unit V nA mA V PJ32 Process Test Conditions IG = 1 µA, VDS = Ø VGS = 15V, VDS = Ø VDS = – 15V, VGS = Ø VDS = – 15V, ID = 1 nA VDS = – 15V, VGS = Ø VDS = Ø, VGS = 10 VDS = Ø, VGS = 10 f = 1 kHz f = 1 MHz f = 1 MHz f = 1 Hz nV/√HZ VDS = 10V, VGS = Ø 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com