Silicon Junction Field-Effect Transistor

F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ26A Process. Datasheet 2N4416, 2N4416A www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 6 4 1 4 4.5 1.2 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –1 Min – 30 Typ – 40 – 10 – 100 22 –5 Max Unit V pA mA V NJ26A Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-11 NJ26A Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.1 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 10 VGS = Ø V Drain Current in mA 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V 2 VGS = –2.0 V 0 5 10 15 20 8 6 4 2 0 –1 –2 –3 –4 –5 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA Drain Saturation Current in mA 25 20 15 10 5 20 16 12 8 4 IDSS as a Function of RDS 0 –1 –2 –3 –4 –5 –6 100 150 200 250 300 Gate Source Cutoff Voltage in Volts Drain Source (ON) Resistance in Ω Input Capacitance as a Function of VGS 5 Input Capacitance in pF 4 3 2 1 VDS = Ø V VDS = 15 V Feedback Capacitance in pF 2.5 2.0 1.5 1.0 0.5 Feedback Capacitance as a Function of VGS VDS = Ø V VDS = 5 V 0 –4 –8 – 12 – 16 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts Gate Source Voltage in Volts