SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

www.DataSheet4U.com SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES 18 (SOT 343 STYLE) NE687 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six different low cost plastic surface mount package styles. s ber m T E : a r t n u e n ot NO g p ar gn . E i E A S l o wi n s h e et w d e s PL fol ata or ne for d e e Th this nded f s offic e from mme ELECTRICAL CHARACTERISTICS sal l o rec se cal a Ple ils: a det 8730 NE6 8733 N E 6 8 7 39 NE6 8739R NE6 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68718 2SC5185 18 NE68719 2SC5186 19 NE68730 2SC5184 30 NE68733 2SC5182 33 SYMBOLS fT fT NFMIN NFMIN |S21e|2 |S21e|2 hFE ICBO IEBO CRE4 PT RTH(J-A) RTH(J-C) Gain Bandwidth Product at VCE = 2 V, IC = 20 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 1 V, IC = 10 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 2V, IC =20 mA, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC =10 mA, f = 2.0 GHz Forward Current Gain3 at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 5 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA Feedback Capacitance at VCB = 2 V, IE = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) GHz GHz dB dB 10 8 13 9 11 9 9 11 9 9 12 7.5 7 11 7 7 7 10 1.3 1.3 11 9 2.0 2.0 1.3 1.3 10 2.0 2.0 1.3 1.3 2.0 2.0 1.3 1.3 2.0 2.0 dB dB 8 8.5 6 7 8.5 7 8.5 7.5 7 7.5 70 7.5 6 7.5 6 7.5 140 70 140 70 140 70 140 70 nA nA pF mW °C/W °C/W 0.3 100 100 0.6 90 833 0.4 100 100 0.8 90 1250 0.4 100 100 0.8 90 833 0.4 100 100 0.8 90 625 39R (SOT 143R STYLE) NE68739/39R 2SC5183/83R 39/39R PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX 10 8.5 1.3 1.3 10 8.5 140 100 100 0.4 0.8 90 625 2.0 2.0 Notes: 3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal 2. Electronic Industrial Association of Japan. of the 3 terminal capacitance bridge. California Eastern Laboratories NE687 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Operating Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 5 3 2 30 150 -65 to +150 VCE = 1.0 V, IC = 3.0 mA 500 800 1000 1500 2000 1.10 1.19 1.25 1.36 1.50 17.66 14.48 12.93 9.61 7.52 18.60 15.10 13.40 10.30 8.10 20.30 16.70 15.00 11.90 9.80 6.70 0.47 0.39 0.34 0.29 0.24 0.40 0.35 0.31 0.26 0.23 0.02 0.06 0.08 0.12 0.14 0.18 15 33 45 57 73 12 24 33 44 58 -170 171 172 178 -175 -160 0.28 1.20 0.28 0.27 0.27 0.30 0.22 0.26 0.28 0.28 0.23 0.15 0.28 0.24 0.24 0.23 NE68730 TYPICAL NOISE PARAMETERS (TA = 25˚C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. VCE = 2.0 V, IC = 3.0 mA 500 1.10 800 1.19 1000 1.25 1500 1.36 2000 1.50 VCE = 2.0 V, IC = 20.0 mA 500 800 1000 1500 2000 2500 2.00 2.06 2.10 2.20 2.34 2.46 NE68718 TYPICAL NOISE PARAMETERS (TA = 25˚C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 0.5 V, IC = 0.5 mA 500 1.10 13.07 800 1.31 11.23 1000 1.41 9.36 VCE = 1.0 V, IC = 1.0 mA 500 0.93 800 1.08 1000 1.20 1500 1.48 2000 1.72 VCE = 1.0 V, IC = 3 mA 500 1.10 800 1.15 1000 1.20 1500 1.38 2000 1.60 2500 1.82 3000 2.00 VCE = 2 V, IC = 3 mA 500 1.10 800 1.15 1000 1.20 1500 1.38 2000 1.60 2500 1.82 3000 2.00 VCE = 2 V, IC = 10 mA 500 800 1000 1500 2000 2500 3000 1.60 1.62 1.65 1.73 1.80 2.00 2.19 16.53 13.44 12.21 8.53 6.50 18.68 15.74 13.90 10.63 8.43 7.04 5.84 19.83 16.61 14.85 11.83 9.49 8.16 6.93 22.57 18.75 16.91 13.52 11.17 9.48 8.18 0.72 0.67 0.65 0.63 0.59 0.55 0.46 0.37 0.48 0.40 0.36 0.28 0.21 0.14 0.16 0.50 0.42 0.38 0.29 0.23 0.14 0.13 0.13 0.11 0.09 0.07 0.06 0.08 0.13 30 54 67 27 47 62 83 107 23 48 58 81 104 151 -167 21 39 48 74 91 135 177 19 48 67 100 143 -161 -133 1.00 0.65 0.55 0.56 0.39 0.36 0.34 0.28 0.28 0.25 0.24 0.21 0.20 0.18 0.13 0.26 0.26 0.25 0.24 0.22 0.20 0.12 0.27 0.26 0.25 0.24 0.22 0.20 0.16 NE68739 TYPICAL NOISE PARAMETERS (TA = 25˚C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 0.5 V, IC = 0.5 mA 500 1.23 800 1.37 1000 1.45 VCE = 1.0 V, IC = 3.0 mA 500 800 1000 1500 2000 2500 1.07 1.13 1.18 1.30 1.50 1.66 15.7 10.9 8.7 18.0 14.8 13.2 10.5 8.0 7.0 18.6 15.5 14.0 11.2 9.3 7.8 6.6 21.2 17.6 16.0 12.9 10.6 9.0 7.7 0.77 0.71 0.60 0.48 0.39 0.32 0.23 0.12 0.16 0.46 0.37 0.32 0.20 0.12 0.14 0.23 0.08 0.14 0.16 0.21 0.26 0.31 0.46 36 46 64 30 49 60 76 120 -172 26 38 46 66 113 177 -157 -150 -138 -134 -127 -123 -121 -114 0.61 0.61 0.50 0.31 0.28 0.26 0.24 0.20 0.15 0.28 0.28 0.26 0.25 0.19 0.17 0.10 0.22 0.17 0.17 0.24 0.25 0.25 0.24 VCE = 2.0 V, IC = 3.0 mA 500 1.07 800 1.13 1000 1.18 1500 1.30 2000 1.50 2500 1.66 3000 1.86 VCE = 2.0 V, IC = 20.0 mA 500 800 1000 1500 2000 2500 3000 1.93 1.95 2.00 2.15 2.30 2.40 2.52 NE687 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°) NE68718, NE68730 D.C. POWER DERATING CURVE 150 150 NE68719 D.C. POWER DERATING CURVE Total Power Dissipation, PT (mW) 100 90 Total Power Dissipation, PT (mW) FREE AIR FREE AIR 100 90 50 50 0 0 50 100 150 0 0 50 100 150 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) NE68733, NE68739 D.C. POWER DERATING CURVE 150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 Total Power Dissipation, PT (mW) FREE AIR Collector Current, IC (mA) 20 200 µA 180 µA 160 µA 140 µA 120 µA 100 90 15 10 100 µA 80 µA 60 µA 40 µA IB = 20 µA 50 5 0 0 50 100 150 0 0 2.2 2.4 2.6 Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) NE687 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68718 INSERTION GAIN vs. COLLECTOR CURRENT 14 f = 2 GHz NE68733 NOISE FIGURE vs. COLLECTOR CURRENT 4 f = 2 GHz Insertion Power Gain, |S21e|2 (dB) 12 10 2V VCE = 1 V Noise Figure, NF (dB) 3 2 VCE = 1 V VCE = 2 V 8 1 6 4 1 2 5 10 20 30 100 0 1 2 5 10 20 100 Collector Current, IC (mA) Collector Current, IC (mA) NE68718 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 f = 2 GHz 14 D.C. CURRENT GAIN vs. COLLECTOR CURRENT 500 200 Gain Bandwidth Product, fT (GHz) D.C. Current Gain, hFE 12 10 2V VCE = 1 V 100 VCE = 2 V VCE = 1 V 50 8 6 20 4 2 10 1 2 5 10 20 50 100 1 2 5 10 20 30 50 100 Collector Current, IC (mA) Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2V NE68730 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 f = 1 MHz 40 Feed-back Capacitance, CRE (pF) 0 0.5 1.0 Collector Current, IC (mA) 0.5 30 0.4 20 0.3 10 0.2 1.0 2.0 3.0 4.0 5.0 Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V) NE687 SERIES TYPICAL SCATTERING PARAMETERS (TA = 25°C) .8 .6 .4 3 .2 1 90˚ 1.5 2 135˚ S22 5 GHz 4 5 45˚ S22 10 0.1 GHz 20 0 .2 .4 .6 .8 1 1.5 2 3 45 10 20 S11 5 GHz -.2 S11 0.1 GHz -20 -10 -5 -4 S21 180˚ 5 GHz S12 0.1 GHz S21 0.1 GHz 0˚ S12 5 GHz 315˚ -3 -.4 -2 -.6 -.8 -1 NE68718 VCE = 1.0 V, IC = 1.0 mA -1.5 Coordinates in Ohms Frequency in GHz (VCE = 1 V, IC = 1 mA) 225˚ 2.5 270˚ FREQUENCY GHz 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 MAG 0.962 0.893 0.755 0.689 0.559 0.481 0.440 0.417 0.434 0.512 S11 ANG -8.100 -38.800 -73.500 -89.000 -124.000 -154.200 178.000 152.500 103.700 63.400 MAG 3.385 3.278 2.809 2.566 2.063 1.704 1.461 1.288 1.083 0.929 S21 ANG 168.800 144.800 114.700 101.800 74.800 52.700 33.400 16.800 -13.500 -42.700 MAG 0.023 0.091 0.152 0.170 0.192 0.197 0.195 0.195 0.215 0.270 S12 ANG 81.800 62.800 40.300 31.300 13.700 2.300 -5.200 -9.700 -14.400 -23.500 MAG 0.993 0.944 0.831 0.776 0.666 0.599 0.560 0.531 0.473 0.410 S22 ANG -6.700 -25.400 -45.900 -54.200 -71.100 -84.300 -96.200 -107.700 -133.500 -174.700 K 0.122 0.160 0.321 0.399 0.593 0.787 0.968 1.131 1.264 1.201 MAG1 (dB) 21.678 15.566 12.667 11.788 10.312 9.370 8.746 5.997 3.931 2.658 VCE = 1.0 V, IC = 3.0 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.872 0.710 0.501 0.438 0.354 0.321 0.312 0.311 0.361 0.461 -14.000 -60.600 -104.700 -122.100 -159.700 170.800 145.400 123.000 83.600 51.700 8.998 7.542 5.258 4.463 3.211 2.502 2.064 1.777 1.438 1.206 165.400 130.500 99.100 87.700 65.100 46.800 30.300 15.400 -12.600 -40.100 0.023 0.079 0.114 0.124 0.144 0.164 0.186 0.210 0.263 0.315 80.600 55.100 37.200 32.100 24.100 18.400 12.900 6.800 -7.700 -25.300 0.971 0.807 0.595 0.527 0.425 0.377 0.352 0.334 0.280 0.211 -11.300 -39.500 -61.600 -68.900 -82.000 -92.400 -101.800 -111.500 -136.000 177.500 0.117 0.288 0.543 0.653 0.875 1.025 1.112 1.160 1.163 1.140 25.924 19.799 16.639 15.562 13.483 10.866 8.414 6.851 4.930 3.560 VCE = 1.0 V, IC = 10.0 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.645 0.392 0.270 0.252 0.234 0.234 0.235 0.242 0.300 0.414 -29.400 -95.800 -144.400 -161.700 164.600 140.600 121.100 103.100 73.800 47.400 21.295 12.537 7.101 5.792 3.980 3.042 2.489 2.127 1.705 1.421 155.400 110.900 85.100 76.200 58.000 42.500 27.900 14.200 -12.200 -38.700 0.019 0.055 0.085 0.100 0.136 0.174 0.212 0.249 0.318 0.374 74.200 55.600 50.500 48.600 42.200 34.400 25.600 16.000 -4.300 -25.800 0.892 0.541 0.347 0.303 0.249 0.226 0.215 0.207 0.161 0.141 -21.300 -57.100 -73.800 -79.000 -89.300 -98.90