MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) 0.59±0.05 +0.11-0.05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 8.0 120 18.0 13.0 13.5 10.5 55 1.7 12.0 0.42 0.7 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE678M04 M04 2SC5753 UNITS nA nA MIN TYP +0.01 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 30 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz DC IEBO hFE P1dB GL RF MAG |S21E|2 ηc NF fT Cre Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan. 4. MAG = |S21| |S12| (K ± K 2- 1 ). California Eastern Laboratories 4 1.30 NE678M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 100 205 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE678M04-T2-A QUANTITY 3k pcs./reel THERMAL RESISTANCE SYMBOLS Rth j-a PARAMETERS Thermal Resistance from Junction to Ambient UNITS °C/W RATINGS 600 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 f= 1 MHz Total Power Dissipation Pout (mW) 250 205 200 150 100 50 0 25 50 75 100 125 150 Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 90 700 µA 1000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V Collector Current IC (mA) 70 60 50 40 30 20 10 0 2 500 µA 400 µA 300 µA 200 µA DC Current Gain (hFE) 80 600 µA 100 IB =100 µA 4 6 8 10 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 MSG 25 20 15 10 5 0 0.1 |S21e|2 MAG Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz VCE = 3 V IC = 30 mA 10 5 0 1 10 100 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 VCE = 3 V f = 1 GHz 25 VCE = 3 V f = 2 GHz MSG MAG 20 20 MSG MAG 15 |S21e|2 15 10 10 |S21e|2 5 5 0 1 10 100 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 VCE = 3 V f = 2 GHz Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) 25 VCE = 3 V f = 2.5 GHz 16 15 MAG Noise Figure NF (dB) 6 12 4 8 10 |S21e|2 5 2 NF 0 4 0 1 10 100 1 10 0 100 Collector Current IC (mA) Collector Current IC (mA) Associated Gain Ga (dB) 20 Ga NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 0.9 GHz Icq = 10 mA (RF OFF) 250 Pout 200 GP Output Power Pout (dbm) Power Gain Gp (dB) 20 15 150 10 IC ηC 100 5 50 0 -10 -5 0 5 10 0 15 Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency ηc (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 2.8 V f = 1.8 GHz Icq = 10 mA (RF OFF) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 250 25 250 VCE = 3.2 V f = 1.8 GHz Icq = 10 mA (RF OFF) Collector Current IC (mA), Collector Efficiency ηc (%) Output Power Pout (dbm) Power Gain Gp (dB) 15 GP 10 ηC 5 IC 0 -10 -5 0 5 10 150 Output Power Pout (dbm) Power Gain Gp (dB) 20 200 20 200 15 GP 10 ηC 5 IC 150 100 100 50 50 0 15 0 -10 -5 0 5 10 0 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 2.4 GHz Icq = 10 mA (RF OFF) Input Power Pin (dBm) 250 Output Power Pout (dbm) Power Gain Gp (dB) 20 200 15 GP 10 ηC 5 IC 0 -10 -5 0 5 10 150 100 50 0 15 Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency ηc (%) Pout Collector Current IC (mA), Collector Efficiency ηc (%) Pout Pout NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j10 0 10 S11 -j10 25 S22 50 100 j100 +90º +135º +45º 5 10 15 20 +180º +0º -135º -j25 -j50 -j100 -45º -90º NE678M04 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.72 0.68 0.65 0.63 0.62 0.60 0.60 0.60 0.60 0.60 0.59 0.59 0.59 0.59 0.59 0.60 0.61 0.63 0.65 0.67 0.69 0.71 S11 ANG -45.97 -81.43 -106.66 -124.06 -136.69 -148.20 -155.78 -161.77 -167.38 -171.69 170.30 161.69 158.90 156.19 142.62 128.82 114.69 101.16 89.04 78.45 68.99 59.90 MAG 23.42 19.17 15.41 12.56 10.53 8.85 7.72 6.86 6.15 5.59 3.81 3.21 3.05 2.90 2.35 1.97 1.69 1.47 1.29 1.15 1.02 0.92 S21 ANG 152.40 132.28 118.19 108.21 100.63 94.98 89.80 85.45 81.38 77.66 61.44 52.84 50.05 47.32 33.99 21.32 9.12 -2.44 -13.44 -23.86 -33.79 -43.00 MAG 0.02 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.08 0.09 0.09 0.09 0.11 0.13 0.14 0.16 0.18 0.19 0.21 0.23 S12 ANG 65.62 52.02 42.17 37.11 33.66 32.53 31.81 31.70 31.29 31.31 33.17 33.52 33.69 33.45 32.55 29.86 26.40 21.89 16.66 10.92 4.77 -1.43 MAG 0.90 0.74 0.61 0.52 0.46 0.38 0.36 0.34 0.33 0.32 0.31 0.32 0.32 0.33 0.36 0.39 0.43 0.47 0.50 0.53 0.57 0.60 S22 ANG -29.51 -51.31 -66.86 -77.84 -86.27 -92.24 -98.70 -102.52 -106.64 -110.16 -123.84 -130.08 -131.91 -133.96 -142.01 -149.47 -156.17 -163.41 -171.39 179.62 170.14 160.66 0.10 0.18 0.26 0.34 0.42 0.56 0.62 0.68 0.74 0.79 1.00 1.07 1.10 1.11 1.14 1.15 1.12 1.07 1.03 0.98 0.94 0.92 K MAG1 (dB) 29.97 26.71 24.93 23.61 22.62 21.75 21.00 20.32 19.72 19.17 16.81 13.98 13.41 12.93 11.02 9.63 8.62 7.95 7.59 7.69 6.86 6.09 Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j10 0 10 25 S11 50 100 S22 10 20 30 +180º +0º +90º j100 +135º +45º -j10 -135º -45º -90º -j25 -j50 -j100 NE678M04 VC = 3 V, IC = 30 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.52 0.55 0.56 0.56 0.56 0.56 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.58 0.60 0.62 0.64 0.65 0.67 S11 ANG -74.30 -114.70 -136.33 -149.34 -158.35 -167.02 -172.39 -176.68 179.14 176.07 161.30 153.82 151.23 148.83 136.19 123.25 109.78 96.93 85.43 75.45 66.54 57.90 MAG 39.85 28.29 20.98 16.42 13.45 11.22 9.70 8.57 7.66 6.93 4.70 3.96 3.76 3.58 2.90 2.44 2.10 1.84 1.63 1.46 1.32 1.19 S21 ANG 141.89 120.64 108.33 100.26 94.25 90.08 85.86 82.27 78.87 75.71 61.65 53.96 51.43 48.96 36.74 24.91 13.41 2.30 -8.43 -18.79 -28.80 -38.45 MAG 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.08 0.09 0.09 0.10 0.12 0.14 0.16 0.18 0.19 0.21 0.22 0.24 S12 ANG 63.14 50.10 45.90 45.26 45.86 47.13 48.18 49.01 49.82 50.22 49.69 48.26 47.59 46.86 42.26 36.84 30.78 24.27 17.67 11.05 4.47 -2.21 MAG 0.79 0.58 0.46 0.40 0.36 0.30 0.28 0.27 0.27 0.26 0.27 0.27 0.28 0.28 0.31 0.34 0.37 0.40 0.43 0.47 0.50 0.53 S22 ANG -43.24 -69.59 -86.51 -97.94 -106.44 -115.48 -121.83 -125.22 -128.89 -131.89 -142.80 -147.21 -148.33 -149.67 -154.80